EC-10N20

EC-10N16/20 & EC-10P16/20 HIGH POWER 125W HIGH QUALITY AUDIO AMPLIFIER APPLICATIONS N & P CHANNEL LATERAL MOSFETs T03 8.2 1.57 + 0.5 11.5 + 0.3 25.00 10.85 + 0.1 3 30.15 + 0.15 16.90 + 0.15 39.00 19.50 + 0.05 1.0 + 0.05 21 R 1.50 max MECHANICAL DATA R4.3 + 0.1 1. GATE 2. DRAIN 3. SOURCE dimensions in mm ABSOLUTE MAXIMUM RATINGS (TC= 25°C unless otherwise stated) (EC-10)16 (EC-10)20 VDSX VGSS ID ID(PK) Drain – Source Voltage Gate – Source Voltage Continuous Drain Current Body Drain Diode 160V 200V +- 14V 8A 8A PD Total Power Dissipation @ (T case = 25°C) C Tstg Storage Temperature Range 125W -55 to 150°C Tj R0JC Maximum Operating Junction Temperature Thermal Resistance Junction - case 150°C 1.0°C/W Tel: +44 (0)1702 543500 Fax: +44 (0)1702 543700 1 EC-10N16/20 & EC-10P16/20 T03P/T0247 2.0+ 0.5 5.0+ 0.31 15.88+ 0.4 20.13 +0.33 6.15 3.68+ 1.3 MECHANICAL DATA 0.59+ 0.2 2.4 + 0.2 20.06 +0.26 123 4.5 3.0 + 0.13 1.89+ 0.24 1.2 + 0.2 5.25 1. GATE 2. SOURCE (CASE) 3. DRAIN dimensions in mm STATIC CHARACTERISTICS Characteristic (TC= 25°C unless otherwise stated) Test Conditions MIN TYP MAX UNIT BVDSX Drain – Source Breakdown Voltage VGS = -10V ID = 10mA (EC-10)16 (EC-10)20 160 200 V V BVGSS V GS(OFF) V DS(SAT)* I DSX Gate – Source Breakdown Voltage VDS = 0 Gate - Source Cut-O Voltage Drain - Source Saturation Voltage VDS = 10V VGD = 0 Drain - Source Cut - O Current VGS = -10V IG=-+100uA ID = 100mA ID = 8A VDS = 160V (EC-10)1...