MOSFET. EC-10P20 Datasheet

EC-10P20 Datasheet PDF


Part

EC-10P20

Description

N & P-CHANNEL LATERAL MOSFET

Manufacture

EXICON

Page 4 Pages
Datasheet
Download EC-10P20 Datasheet


EC-10P20 Datasheet
EC-10N16/20 & EC-10P16/20
HIGH POWER 125W
HIGH QUALITY AUDIO AMPLIFIER APPLICATIONS
N & P CHANNEL LATERAL MOSFETs
T03
8.2
1.57 + 0.5
11.5 + 0.3
25.00
10.85 + 0.1
3
21
MECHANICAL DATA
R4.3 + 0.1
1. GATE
2. DRAIN
3. SOURCE
dimensions in mm
ABSOLUTE MAXIMUM RATINGS
(TC= 25°C unless otherwise stated)
(EC-10)16 (EC-10)20
VDSX
VGSS
ID
ID(PK)
Drain – Source Voltage
Gate – Source Voltage
Continuous Drain Current
Body Drain Diode
160V
200V
+- 14V
8A
8A
PD Total Power Dissipation @ (T case = 25°C) C
Tstg Storage Temperature Range
125W
-55 to 150°C
Tj
R0JC
Maximum Operating Junction Temperature
Thermal Resistance Junction - case
150°C
1.0°C/W
Tel: +44 (0)1702 543500
Fax: +44 (0)1702 543700
1

EC-10P20 Datasheet
EC-10N16/20 & EC-10P16/20
T03P/T0247
2.0+ 0.5
5.0+ 0.31
15.88+ 0.4
6.15
3.68+ 1.3
MECHANICAL DATA
0.59+ 0.2
2.4 + 0.2
123
4.5
3.0 + 0.13
1.89+ 0.24
1.2 + 0.2
5.25
1. GATE
2. SOURCE (CASE)
3. DRAIN
dimensions in mm
STATIC CHARACTERISTICS
Characteristic
(TC= 25°C unless otherwise stated)
Test Conditions
MIN TYP MAX UNIT
BVDSX
Drain – Source Breakdown Voltage
VGS = -10V
ID = 10mA
(EC-10)16
(EC-10)20
160
200
V
V
BVGSS
V GS(OFF)
V DS(SAT)*
I DSX
Gate – Source Breakdown Voltage VDS = 0
Gate - Source Cut-O Voltage
Drain - Source Saturation Voltage
VDS = 10V
VGD = 0
Drain - Source Cut - O Current
VGS = -10V
IG=-+100uA
ID = 100mA
ID = 8A
VDS = 160V
(EC-10)16
VDS =200V
(EC-10)20
-+14
0.15
V
1.5 V
12 V
10
mA
10
Yfs*
Forward Transfer Admittance
VDS = 10V
ID = 3A
0.7
2S
DYNAMIC CHARACTERISTICS (TC= 25°C unless otherwise stated)
Characteristic
Test Conditions
N-Channel P-Channel UNIT
Ciss Input Capacitance
Coss Output Capacitance
VDS= 10V
f = 1MHz
500
300
700
300
Crss Reverse Transfer Capacitance
10 25
pF
t on Turn-on Time
t o Turn-o Time
VDS= 20V
ID = 7A
100
50
120
60 80
ns
* Pulse Test: Pulse Width = 300μs, Duty Cycle ≤ 2%
Tel: +44 (0)1702 543500
Fax: +44 (0)1702 543700
2


Features Datasheet pdf EC-10N16/20 & EC-10P16/20 HIGH POWER 12 5W HIGH QUALITY AUDIO AMPLIFIER APPLICA TIONS N & P CHANNEL LATERAL MOSFETs T0 3 8.2 1.57 + 0.5 11.5 + 0.3 25.00 10 .85 + 0.1 3 30.15 + 0.15 16.90 + 0.15 39.00 19.50 + 0.05 1.0 + 0.05 21 R 1.50 max MECHANICAL DATA R4.3 + 0.1 1. GATE 2. DRAIN 3. SOURCE dimensions in mm ABSOLUTE MAXIMUM RATINGS (TC= 25 °C unless otherwise stated) (EC-10)16 (EC-10)20 VDSX VGSS ID ID(PK) Drain – Source Voltage Gate – Source Volt age Continuous Drain Current Body Drain Diode 160V 200V +- 14V 8A 8A PD T otal Power Dissipation @ (T case = 25° C) C Tstg Storage Temperature Range 12 5W -55 to 150°C Tj R0JC Maximum Oper ating Junction Temperature Thermal Resi stance Junction - case 150°C 1.0°C/W Tel: +44 (0)1702 543500 Fax: +44 (0) 1702 543700 1 EC-10N16/20 & EC-10P16/ 20 T03P/T0247 2.0+ 0.5 5.0+ 0.31 15 .88+ 0.4 20.13 +0.33 6.15 3.68+ 1.3 MECHANICAL DATA 0.59+ 0.2 2.4 + 0.2 2 0.06 +0.26 123 4.5 3.0 + 0.13 1.89+ 0.24 1.2 + 0.2 5.25 1. GATE 2..
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