ECX10N20R

ECX10N20R N CHANNEL LATERAL MOSFET N Channel Lateral Mosfet Designed speci cally for linear audio ampli er applications High-speed for high bandwidth ampli ers Reduced Vds sat High voltage rating - 200V TO-247 plastic package Enhanced oscillation suppression in multi-device applications Complementary P-channel available – ECX10P20R ABSOLUTE MAXIMUM RATINGS (TC= 25°C unless otherwise stated) VDSS Drain – Source Voltage 200V VGSS Gate – Source Voltage +/-14V ID Continuous Drain Current 8A IDR Body Drain Diode Current 8A PD Allowable Power Dissipation* Tcase = 25°C Tch Channel Temperature 125W 150°C Tstg Storage Temperature Range -55 to +150°C *Thermal Resistance, Junction To Case 0.5 deg/watt Tel: +44 (0)1702 543500 Fax: +44 (0)1702 543700 1 ECX10N20R ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated) Symbols BVDSX VGS(o ) VDS(sat)* |yfs|* IDSX Parameters Drain-Source Breakdown Voltage Gate-Source Cut-o Voltage Drain-Source Saturation Voltage Forward Transfer Admittance Drain-Source Cut-O Current Test Conditions VGS = 10V      ID = 10mA Min. Typ Max. Units 200 V VDS = 10V I D = 100mA 0.15 1.5 V VGD  = 0 ID = 8A 10 V VD  S= 10V VG  S = 10V IDS = 3A 0.7 VD  S= 200V 2 S( ) 10 mA * Pulse Test: Pulse Width = 300μs, Duty Cycle ≤ 2% DYNAMIC CHARACTERISTICS Symbols Ciss Coss Crss t on to Parameters Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-O Time Test Conditions VGS= 0 VDS= 10V f = 1.0MHz Mi...