MOSFET. ECF10P20 Datasheet

ECF10P20 Datasheet PDF


Part

ECF10P20

Description

N & P-CHANNEL LATERAL MOSFET

Manufacture

EXICON

Page 4 Pages
Datasheet
Download ECF10P20 Datasheet


ECF10P20 Datasheet
ECF10P20
HIGH POWER 125W
HIGH QUALITY AUDIO AMPLIFIER APPLICATIONS
N & P CHANNEL LATERAL MOSFETs
T03
8.70
1.50
11.60
+0.3
25.00
10.90 + 0.1
3
21
MECHANICAL DATA
R4.00 + 0.1
ABSOLUTE MAXIMUM RATINGS
(TC= 25°C unless otherwise stated)
VDSX Drain – Source Voltage
VGSS Gate – Source Voltage
ID
ID(PK)
Continuous Drain Current
Body Drain Diode
PD Total Power Dissipation @ (T case = 25°C) C
Tstg Storage Temperature Range
Tj
R0JC
Maximum Operating Junction Temperature
Thermal Resistance Junction - case
1. GATE
2. DRAIN
3 SOURCE
dimensions in mm
(ECF10)20
200V
+- 14V
8A
8A
125W
-55 to 150°C
150°C
1.0°C/W
www.exicon.info
Exicon products are available at www.profusionplc.com
Tel: +44 (0)1702 543500 FFaaxx::++4444((00))11770022554433770000
ReRve:v3:.31.1
1

ECF10P20 Datasheet
ECF10P20
STATIC CHARACTERISTICS
Characteristic
(TC= 25°C unless otherwise stated)
Test Conditions
MIN TYP MAX UNIT
BVDSX
Drain – Source Breakdown Voltage ID = 10mA
(ECF10)20
200
V
BVGSS
V GS(OFF)
V DS(SAT)*
I DSX
Gate – Source Breakdown Voltage VDS = 0
Gate - Source Cut-O Voltage
Drain - Source Saturation Voltage
VDS = 10V
VGD = 0
Drain - Source Cut - O Current
VGS = -10V
IG=-+100uA
ID = 100mA
ID = 8A
VDS = 160V
(ECF10)16
VDS =200V
(ECF10)20
-+14
0.15
V
1.5 V
12 V
10
mA
10
Yfs*
Forward Transfer Admittance
VDS = 10V
ID = 3A
0.7
2S
DYNAMIC CHARACTERISTICS (TC= 25°C unless otherwise stated)
Characteristic
Test Conditions
N-Channel P-Channel UNIT
Ciss Input Capacitance
Coss Output Capacitance
VDS= 10V
f = 1MHz
500
300
700
300
Crss Reverse Transfer Capacitance
10 25
pF
t on Turn-on Time
t o Turn-o Time
VDS= 20V
ID = 7A
100
50
120
60 80
ns
* Pulse Test: Pulse Width = 300μs, Duty Cycle ≤ 2%
www.exicon.info
Exicon products are available at www.profusionplc.com
Tel: +44 (0)1702 543500 FFaaxx::++4444((00))11770022554433770000
ReRve:v3:.31.1
12


Features Datasheet pdf ECF10P20 HIGH POWER 125W HIGH QUALITY A UDIO AMPLIFIER APPLICATIONS N & P CHANN EL LATERAL MOSFETs T03 8.70 1.50 11. 60 +0.3 25.00 10.90 + 0.1 3 39.00 R 2.00 max 01.0 30.2 + 0.15 16.90 + 0.15 21 MECHANICAL DATA R4.00 + 0.1 ABSO LUTE MAXIMUM RATINGS (TC= 25°C unless otherwise stated) VDSX Drain – Sourc e Voltage VGSS Gate – Source Voltage ID ID(PK) Continuous Drain Current Bo dy Drain Diode PD Total Power Dissipat ion @ (T case = 25°C) C Tstg Storage T emperature Range Tj R0JC Maximum Oper ating Junction Temperature Thermal Resi stance Junction - case 1. GATE 2. DRAI N 3 SOURCE dimensions in mm (ECF10)20 2 00V +- 14V 8A 8A 125W -55 to 150°C 150 °C 1.0°C/W www.exicon.info Exicon p roducts are available at www.profusionp lc.com Tel: +44 (0)1702 543500 FFaaxx:: ++4444((00))11770022554433770000 ReRve :v3:.31.1 1 ECF10P20 STATIC CHARACTE RISTICS Characteristic (TC= 25°C unle ss otherwise stated) Test Conditions MIN TYP MAX UNIT BVDSX Drain – Source Breakdown Voltage ID = 10mA (ECF.
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