ECF10P20

ECF10P20 HIGH POWER 125W HIGH QUALITY AUDIO AMPLIFIER APPLICATIONS N & P CHANNEL LATERAL MOSFETs T03 8.70 1.50 11.60 +0.3 25.00 10.90 + 0.1 3 39.00 R 2.00 max 01.0 30.2 + 0.15 16.90 + 0.15 21 MECHANICAL DATA R4.00 + 0.1 ABSOLUTE MAXIMUM RATINGS (TC= 25°C unless otherwise stated) VDSX Drain – Source Voltage VGSS Gate – Source Voltage ID ID(PK) Continuous Drain Current Body Drain Diode PD Total Power Dissipation @ (T case = 25°C) C Tstg Storage Temperature Range Tj R0JC Maximum Operating Junction Temperature Thermal Resistance Junction - case 1. GATE 2. DRAIN 3 SOURCE dimensions in mm (ECF10)20 200V +- 14V 8A 8A 125W -55 to 150°C 150°C 1.0°C/W www.exicon.info Exicon products are available at www.profusionplc.com Tel: +44 (0)1702 543500 FFaaxx::++4444((00))11770022554433770000 ReRve:v3:.31.1 1 ECF10P20 STATIC CHARACTERISTICS Characteristic (TC= 25°C unless otherwise stated) Test Conditions MIN TYP MAX UNIT BVDSX Drain – Source Breakdown Voltage ID = 10mA (ECF10)20 200 V BVGSS V GS(OFF) V DS(SAT)* I DSX Gate – Source Breakdown Voltage VDS = 0 Gate - Source Cut-O Voltage Drain - Source Saturation Voltage VDS = 10V VGD = 0 Drain - Source Cut - O Current VGS = -10V IG=-+100uA ID = 100mA ID = 8A VDS = 160V (ECF10)16 VDS =200V (ECF10)20 -+14 0.15 V 1.5 V 12 V 10 mA 10 Yfs* Forward Transfer Admittance VDS = 10V ID = 3A 0.7 2S DYNAMIC CHARACTERISTICS (TC= 25°C unless otherwise stated) Characteristic Test Conditions N-Channel P-Channel U...