Document
UC1611 UC3611
SLUS338A – JUNE 1993 – REVISED MAY 2001
QUAD SCHOTTKY DIODE ARRAY
FEATURES
D Matched, Four-Diode Monolithic Array D High Peak Current D Low-Cost MINIDIP Package D Low-Forward Voltage D Parallelable for Lower VF or Higher IF D Fast Recovery Time D Military Temperature Range Available
DESCRIPTION
This four-diode array is designed for general purpose use as individual diodes or as a high-speed, high-current bridge. It is particularly useful on the outputs of high-speed power MOSFET drivers where Schottky diodes are needed to clamp any negative excursions caused by ringing on the driven line.These diodes are also ideally suited for use as voltage clamps when driving inductive loads such as relays and solenoids, and to provide a path for current free-wheeling in motor drive applications.The use of Schottky diode technology features high efficiency through lowered forward voltage drop and decreased reverse recovery time.This single monolithic chip is fabricated in both hermetic CERDIP and copper-eaded plastic packages. The UC1611 in ceramic is designed for –55°C to 125°C environments but with reduced peak current capability: while the UC3611 in plastic has higher current rating over a 0°C to 70°C ambient temperature range.
TA = TJ
–55°C to 125°C 0°C to 70°C
AVAILABLE OPTIONS
Packaged Devices
SOIC Wide (DW)
DIL (J)
UC1611DW
UC1611J
UC3611DW
UC3611J
DIL (N) UC1611N UC3611N
PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.
www.ti.com
Copyright 2001, Texas Instruments Incorporated 1
UC1611 UC3611
SLUS338A – JUNE 1993 – REVISED MAY 2001
J OR N PACKAGE (TOP VIEW)
DW PACKAGE (TOP VIEW)
absolute maximum ratings over operating free-air temperature (unless otherwise noted)†
Peak inverse voltage (per diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 V Diode-to-diode voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80 V Peak forward current
UC1611 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 A UC3611 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 A Power dissipation at TA = 70°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 W Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65°C to 150°C Lead temperature (soldering, 10 seconds) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300°C
† Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
‡ Please consult packaging section of data book for thermal limitations and considerations of package.
electrical characteristics, all specifications apply to each individual diode, TJ = 25°C, TA = TJ, (except as noted)
PARAMETER
TEST CONDITIONS
MIN TYP MAX
Forward voltage drop
Leakage current Reverse recovery
IF = 100 mA
IF = 1 A
VR = 40 V
VR = 40 V,
TJ = 100°C
0.5 A forward to 0.5 A reverse
0.3 0.4 0.9
0.01 0.1 20
0.7 1.2 0.1 1.0
Forward recovery
1 A forward to 1.1 V recovery
40
Junction capacitance
VR = 5V
100
NOTE: At forward currents of greater than 1.0 A, a parasitic current of approximately 10 mA may be collected by adjacent diodes.
UNITS V V mA mA ns ns pF
2 www.ti.com
Leakage Current – µA Forward Current – A
APPLICATION INFORMATION
UC1611 UC3611
SLUS338A – JUNE 1993 – REVISED MAY 2001
1000 500
300 200
REVERSE CURRENT vs
VOLTAGE
100 T J = 125 °C
50
30 20
10
5 T J = 75 °C 3
2
T J = 25 °C
1 0
10 20
30
Reverse Voltage – V
40
Figure 1
FORWARD CURRENT vs
VOLTAGE
5.0
3.0 2.0
1.0
0.5
0.3 0.2
0.1 T J = –55 °C
0.05
0.03 0.02
T J = 25 °C
0.01
0.005
0.003 0.002
T J = 125 °C
0.001 50 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Forward Voltage – V
Figure 2
Figure 3. Clamp Diodes – PWMs and Drivers
www.ti.com
3
UC1611 UC3611
SLUS338A – JUNE 1993 – REVISED MAY 2001
APPLICATION INFORMATION
Figure 4. Transformer Coupled Drive Circuits Figure 5. Linear Regulations
4 www.ti.com
PACKAGE OPTION ADDENDUM
www.ti.com
.