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UC3611 Dataheets PDF



Part Number UC3611
Manufacturers Texas Instruments
Logo Texas Instruments
Description Quad Schottky Diode Array
Datasheet UC3611 DatasheetUC3611 Datasheet (PDF)

UC1611 UC3611 SLUS338A – JUNE 1993 – REVISED MAY 2001 QUAD SCHOTTKY DIODE ARRAY FEATURES D Matched, Four-Diode Monolithic Array D High Peak Current D Low-Cost MINIDIP Package D Low-Forward Voltage D Parallelable for Lower VF or Higher IF D Fast Recovery Time D Military Temperature Range Available DESCRIPTION This four-diode array is designed for general purpose use as individual diodes or as a high-speed, high-current bridge. It is particularly useful on the outputs of high-speed power MOSFET.

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UC1611 UC3611 SLUS338A – JUNE 1993 – REVISED MAY 2001 QUAD SCHOTTKY DIODE ARRAY FEATURES D Matched, Four-Diode Monolithic Array D High Peak Current D Low-Cost MINIDIP Package D Low-Forward Voltage D Parallelable for Lower VF or Higher IF D Fast Recovery Time D Military Temperature Range Available DESCRIPTION This four-diode array is designed for general purpose use as individual diodes or as a high-speed, high-current bridge. It is particularly useful on the outputs of high-speed power MOSFET drivers where Schottky diodes are needed to clamp any negative excursions caused by ringing on the driven line.These diodes are also ideally suited for use as voltage clamps when driving inductive loads such as relays and solenoids, and to provide a path for current free-wheeling in motor drive applications.The use of Schottky diode technology features high efficiency through lowered forward voltage drop and decreased reverse recovery time.This single monolithic chip is fabricated in both hermetic CERDIP and copper-eaded plastic packages. The UC1611 in ceramic is designed for –55°C to 125°C environments but with reduced peak current capability: while the UC3611 in plastic has higher current rating over a 0°C to 70°C ambient temperature range. TA = TJ –55°C to 125°C 0°C to 70°C AVAILABLE OPTIONS Packaged Devices SOIC Wide (DW) DIL (J) UC1611DW UC1611J UC3611DW UC3611J DIL (N) UC1611N UC3611N PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. www.ti.com Copyright  2001, Texas Instruments Incorporated 1 UC1611 UC3611 SLUS338A – JUNE 1993 – REVISED MAY 2001 J OR N PACKAGE (TOP VIEW) DW PACKAGE (TOP VIEW) absolute maximum ratings over operating free-air temperature (unless otherwise noted)† Peak inverse voltage (per diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 V Diode-to-diode voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80 V Peak forward current UC1611 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 A UC3611 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 A Power dissipation at TA = 70°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 W Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65°C to 150°C Lead temperature (soldering, 10 seconds) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300°C † Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. ‡ Please consult packaging section of data book for thermal limitations and considerations of package. electrical characteristics, all specifications apply to each individual diode, TJ = 25°C, TA = TJ, (except as noted) PARAMETER TEST CONDITIONS MIN TYP MAX Forward voltage drop Leakage current Reverse recovery IF = 100 mA IF = 1 A VR = 40 V VR = 40 V, TJ = 100°C 0.5 A forward to 0.5 A reverse 0.3 0.4 0.9 0.01 0.1 20 0.7 1.2 0.1 1.0 Forward recovery 1 A forward to 1.1 V recovery 40 Junction capacitance VR = 5V 100 NOTE: At forward currents of greater than 1.0 A, a parasitic current of approximately 10 mA may be collected by adjacent diodes. UNITS V V mA mA ns ns pF 2 www.ti.com Leakage Current – µA Forward Current – A APPLICATION INFORMATION UC1611 UC3611 SLUS338A – JUNE 1993 – REVISED MAY 2001 1000 500 300 200 REVERSE CURRENT vs VOLTAGE 100 T J = 125 °C 50 30 20 10 5 T J = 75 °C 3 2 T J = 25 °C 1 0 10 20 30 Reverse Voltage – V 40 Figure 1 FORWARD CURRENT vs VOLTAGE 5.0 3.0 2.0 1.0 0.5 0.3 0.2 0.1 T J = –55 °C 0.05 0.03 0.02 T J = 25 °C 0.01 0.005 0.003 0.002 T J = 125 °C 0.001 50 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Forward Voltage – V Figure 2 Figure 3. Clamp Diodes – PWMs and Drivers www.ti.com 3 UC1611 UC3611 SLUS338A – JUNE 1993 – REVISED MAY 2001 APPLICATION INFORMATION Figure 4. Transformer Coupled Drive Circuits Figure 5. Linear Regulations 4 www.ti.com PACKAGE OPTION ADDENDUM www.ti.com .


UC3610 UC3611 UC1611


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