Array. UC1611 Datasheet

UC1611 Datasheet PDF


Part

UC1611

Description

Quad Schottky Diode Array

Manufacture

etcTI

Page 7 Pages
Datasheet
Download UC1611 Datasheet


UC1611 Datasheet
UC1611
UC3611
SLUS338A – JUNE 1993 – REVISED MAY 2001
QUAD SCHOTTKY DIODE ARRAY
FEATURES
D Matched, Four-Diode Monolithic Array
D High Peak Current
D Low-Cost MINIDIP Package
D Low-Forward Voltage
D Parallelable for Lower VF or Higher IF
D Fast Recovery Time
D Military Temperature Range Available
DESCRIPTION
This four-diode array is designed for general
purpose use as individual diodes or as a
high-speed, high-current bridge. It is particularly
useful on the outputs of high-speed power
MOSFET drivers where Schottky diodes are
needed to clamp any negative excursions caused
by ringing on the driven line.These diodes are also
ideally suited for use as voltage clamps when
driving inductive loads such as relays and
solenoids, and to provide a path for current
free-wheeling in motor drive applications.The use
of Schottky diode technology features high
efficiency through lowered forward voltage drop
and decreased reverse recovery time.This single
monolithic chip is fabricated in both hermetic
CERDIP and copper-eaded plastic packages.
The UC1611 in ceramic is designed for –55°C to
125°C environments but with reduced peak
current capability: while the UC3611 in plastic has
higher current rating over a 0°C to 70°C ambient
temperature range.
TA = TJ
–55°C to 125°C
0°C to 70°C
AVAILABLE OPTIONS
Packaged Devices
SOIC Wide (DW)
DIL (J)
UC1611DW
UC1611J
UC3611DW
UC3611J
DIL (N)
UC1611N
UC3611N
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
www.ti.com
Copyright 2001, Texas Instruments Incorporated
1

UC1611 Datasheet
UC1611
UC3611
SLUS338A JUNE 1993 REVISED MAY 2001
J OR N PACKAGE
(TOP VIEW)
DW PACKAGE
(TOP VIEW)
absolute maximum ratings over operating free-air temperature (unless otherwise noted)
Peak inverse voltage (per diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 V
Diode-to-diode voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80 V
Peak forward current
UC1611 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 A
UC3611 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 A
Power dissipation at TA = 70°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 W
Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65°C to 150°C
Lead temperature (soldering, 10 seconds) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300°C
Stresses beyond those listed under absolute maximum ratingsmay cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditionsis not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
Please consult packaging section of data book for thermal limitations and considerations of package.
electrical characteristics, all specifications apply to each individual diode, TJ = 25°C, TA = TJ,
(except as noted)
PARAMETER
TEST CONDITIONS
MIN TYP MAX
Forward voltage drop
Leakage current
Reverse recovery
IF = 100 mA
IF = 1 A
VR = 40 V
VR = 40 V,
TJ = 100°C
0.5 A forward to 0.5 A reverse
0.3 0.4
0.9
0.01
0.1
20
0.7
1.2
0.1
1.0
Forward recovery
1 A forward to 1.1 V recovery
40
Junction capacitance
VR = 5V
100
NOTE: At forward currents of greater than 1.0 A, a parasitic current of approximately 10 mA may be collected by adjacent diodes.
UNITS
V
V
mA
mA
ns
ns
pF
2 www.ti.com


Features Datasheet pdf UC1611 UC3611 SLUS338A – JUNE 1993 REVISED MAY 2001 QUAD SCHOTTKY DIODE ARRAY FEATURES D Matched, Four-Diode M onolithic Array D High Peak Current D L ow-Cost MINIDIP Package D Low-Forward V oltage D Parallelable for Lower VF or H igher IF D Fast Recovery Time D Militar y Temperature Range Available DESCRIPT ION This four-diode array is designed f or general purpose use as individual di odes or as a high-speed, high-current b ridge. It is particularly useful on the outputs of high-speed power MOSFET dri vers where Schottky diodes are needed t o clamp any negative excursions caused by ringing on the driven line.These dio des are also ideally suited for use as voltage clamps when driving inductive l oads such as relays and solenoids, and to provide a path for current free-whee ling in motor drive applications.The us e of Schottky diode technology features high efficiency through lowered forwar d voltage drop and decreased reverse re covery time.This single monolithic chip is fabricated in both herme.
Keywords UC1611, datasheet, pdf, etcTI, Quad, Schottky, Diode, Array, C1611, 1611, 611, UC161, UC16, UC1, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute, Equivalent




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)