Document
BTA312Y-600C
3Q Hi-Com Triac
19 September 2018
Product data sheet
1. General description
Planar passivated high commutation three quadrant triac in a SOT78D (TO-220AB) internally insulated plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. This "series C" triac will commutate the full RMS current at the maximum rated junction temperature without the aid of a snubber. This device has an internally isolated mounting base.
2. Features and benefits
• 3Q technology for improved noise immunity • High commutation capability with maximum false trigger immunity • High immunity to false turn-on by dV/dt • Isolated mounting base with 2500 V (RMS) isolation • Less sensitive gate for high noise immunity • Planar passivated for voltage ruggedness and reliability • Triggering in three quadrants only
3. Applications
• Electronic thermostats (heating and cooling) • Motor controls • Rectifier-fed DC inductive loads e.g. DC motors and solenoids
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDRM
repetitive peak offstate voltage
IT(RMS)
RMS on-state current full sine wave; Tmb ≤ 84 °C; Fig. 1; Fig. 2; Fig. 3
ITSM non-repetitive peak on- full sine wave; Tj(init) = 25 °C;
state current
tp = 20 ms; Fig. 4; Fig. 5
full sine wave; Tj(init) = 25 °C; tp = 16.7 ms
Tj junction temperature
Static characteristics
IGT
gate trigger current
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C; Fig. 7
Min Typ Max Unit - - 600 V - - 12 A - - 100 A - - 110 A - - 125 °C
22-
35 mA 35 mA
WeEn Semiconductors
BTA312Y-600C
3Q Hi-Com Triac
Symbol
Parameter
IH holding current
VT on-state voltage
Dynamic characteristics
dVD/dt
rate of rise of off-state voltage
dIcom/dt
rate of change of commutating current
Conditions
VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 °C; Fig. 7
VD = 12 V; Tj = 25 °C; Fig. 9
IT = 15 A; Tj = 25 °C; Fig. 10
VDM = 402 V; Tj = 125 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit
VD = 400 V; Tj = 125 °C; IT(RMS) = 12 A; dVcom/dt = 20 V/µs; (snubberless condition); gate open circuit
Min Typ Max Unit
2-
35 mA
- - 35 mA - 1.3 1.6 V
500 - - V/µs
20 - - A/ms
5. Pinning information
Table 2. Pinning information Pin Symbol Description 1 T1 main terminal 1 2 T2 main terminal 2 3 G gate mb n.c. mounting base; isolated
Simplified outline
mb
Graphic symbol
T2 sym051
T1 G
123
TO-220AB (SOT78D)
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
BTA312Y-600C
TO-220AB
Description
plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3-lead TO-220
Version SOT78D
BTA312Y-600C
Product data sheet
All information provided in this document is subject to legal disclaimers.
19 September 2018
© WeEn Semiconductors Co., Ltd. 2018. All rights reserved
2 / 13
WeEn Semiconductors
BTA312Y-600C
3Q Hi-Com Triac
7. Limiting values
Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDRM
repetitive peak off-state voltage
IT(RMS)
RMS on-state current
full sine wave; Tmb ≤ 84 °C; Fig. 1; Fig. 2; Fig. 3
ITSM non-repetitive peak on- full sine wave; Tj(init) = 25 °C; tp = 20 ms;
state current
Fig. 4; Fig. 5
full sine wave; Tj(init) = 25 °C; tp = 16.7 ms
I2t
I2t for fusing
tp = 10 ms; SIN
dIT/dt
rate of rise of on-state current
IG = 0.2 A
IGM peak gate current
PGM peak gate power
PG(AV)
average gate power
over any 20 ms period
Tstg storage temperature
Tj junction temperature
30
IT(RMS) (A)
003aab807
15
IT(RMS) (A)
20 10
Min Max Unit - 600 V
- 12 A
- 100 A
- 110 A - 50 A²s - 100 A/µs
- 2A - 5W - 0.5 W -40 125 °C - 125 °C
003aab805
10 5
010-2
10-1
1 10 surge duration (s)
f = 50 Hz; Tmb = 84 °C
Fig. 1. RMS on-state current as a function of surge duration; maximum values
0 -50 0 50 100 150
Tmb(°C)
Fig. 2. RMS on-state current as a function of mounting base temperature; maximum values
BTA312Y-600C
Product data sheet
All information provided in this document is subject to legal disclaimers.
19 September 2018
© WeEn Semiconductors Co., Ltd. 2018. All rights reserved
3 / 13
WeEn Semiconductors
BTA312Y-600C
3Q Hi-Com Triac
20 Ptot (W)
16
12
conduction angle, α
(degrees)
30 60 90 120 180
form factor
a
2.816 1.967 1.570 1.329 1.110
8
α α
003a a b808 75
α = 180° 1 2 0°
Tmb (max) (°C)
85
90° 60° 95
3 0° 105
4 115
0 0369
α = conduction angle a = form factor = IT(RMS) / IT(AV) Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values
103 ITSM (A)
IT(RMS) (A)
125 12
003aab806
(1)
102 IT ITSM
t
tp Tj(init) = 25 °C max
10 10-5
10-4
10-3
10-2
tp (s)
10-1
tp ≤ 20 ms (1) dIT/dt limit
Fig. 4. Non-repetitive peak on-state current as a function of pulse duration; maximum values
BTA312Y-600C
Product data sheet
All inform.