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BTA312Y-600C Dataheets PDF



Part Number BTA312Y-600C
Manufacturers WeEn
Logo WeEn
Description 3Q Hi-Com Triac
Datasheet BTA312Y-600C DatasheetBTA312Y-600C Datasheet (PDF)

BTA312Y-600C 3Q Hi-Com Triac 19 September 2018 Product data sheet 1. General description Planar passivated high commutation three quadrant triac in a SOT78D (TO-220AB) internally insulated plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. This "series C" triac will commutate the full RMS current at the maximum rated junction temperature without the aid of a snubber. This device has an internally isolated mounting base. 2. Features and b.

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BTA312Y-600C 3Q Hi-Com Triac 19 September 2018 Product data sheet 1. General description Planar passivated high commutation three quadrant triac in a SOT78D (TO-220AB) internally insulated plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. This "series C" triac will commutate the full RMS current at the maximum rated junction temperature without the aid of a snubber. This device has an internally isolated mounting base. 2. Features and benefits • 3Q technology for improved noise immunity • High commutation capability with maximum false trigger immunity • High immunity to false turn-on by dV/dt • Isolated mounting base with 2500 V (RMS) isolation • Less sensitive gate for high noise immunity • Planar passivated for voltage ruggedness and reliability • Triggering in three quadrants only 3. Applications • Electronic thermostats (heating and cooling) • Motor controls • Rectifier-fed DC inductive loads e.g. DC motors and solenoids 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDRM repetitive peak offstate voltage IT(RMS) RMS on-state current full sine wave; Tmb ≤ 84 °C; Fig. 1; Fig. 2; Fig. 3 ITSM non-repetitive peak on- full sine wave; Tj(init) = 25 °C; state current tp = 20 ms; Fig. 4; Fig. 5 full sine wave; Tj(init) = 25 °C; tp = 16.7 ms Tj junction temperature Static characteristics IGT gate trigger current VD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 °C; Fig. 7 VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C; Fig. 7 Min Typ Max Unit - - 600 V - - 12 A - - 100 A - - 110 A - - 125 °C 22- 35 mA 35 mA WeEn Semiconductors BTA312Y-600C 3Q Hi-Com Triac Symbol Parameter IH holding current VT on-state voltage Dynamic characteristics dVD/dt rate of rise of off-state voltage dIcom/dt rate of change of commutating current Conditions VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 °C; Fig. 7 VD = 12 V; Tj = 25 °C; Fig. 9 IT = 15 A; Tj = 25 °C; Fig. 10 VDM = 402 V; Tj = 125 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit VD = 400 V; Tj = 125 °C; IT(RMS) = 12 A; dVcom/dt = 20 V/µs; (snubberless condition); gate open circuit Min Typ Max Unit 2- 35 mA - - 35 mA - 1.3 1.6 V 500 - - V/µs 20 - - A/ms 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 T1 main terminal 1 2 T2 main terminal 2 3 G gate mb n.c. mounting base; isolated Simplified outline mb Graphic symbol T2 sym051 T1 G 123 TO-220AB (SOT78D) 6. Ordering information Table 3. Ordering information Type number Package Name BTA312Y-600C TO-220AB Description plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3-lead TO-220 Version SOT78D BTA312Y-600C Product data sheet All information provided in this document is subject to legal disclaimers. 19 September 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 2 / 13 WeEn Semiconductors BTA312Y-600C 3Q Hi-Com Triac 7. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions VDRM repetitive peak off-state voltage IT(RMS) RMS on-state current full sine wave; Tmb ≤ 84 °C; Fig. 1; Fig. 2; Fig. 3 ITSM non-repetitive peak on- full sine wave; Tj(init) = 25 °C; tp = 20 ms; state current Fig. 4; Fig. 5 full sine wave; Tj(init) = 25 °C; tp = 16.7 ms I2t I2t for fusing tp = 10 ms; SIN dIT/dt rate of rise of on-state current IG = 0.2 A IGM peak gate current PGM peak gate power PG(AV) average gate power over any 20 ms period Tstg storage temperature Tj junction temperature 30 IT(RMS) (A) 003aab807 15 IT(RMS) (A) 20 10 Min Max Unit - 600 V - 12 A - 100 A - 110 A - 50 A²s - 100 A/µs - 2A - 5W - 0.5 W -40 125 °C - 125 °C 003aab805 10 5 010-2 10-1 1 10 surge duration (s) f = 50 Hz; Tmb = 84 °C Fig. 1. RMS on-state current as a function of surge duration; maximum values 0 -50 0 50 100 150 Tmb(°C) Fig. 2. RMS on-state current as a function of mounting base temperature; maximum values BTA312Y-600C Product data sheet All information provided in this document is subject to legal disclaimers. 19 September 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 3 / 13 WeEn Semiconductors BTA312Y-600C 3Q Hi-Com Triac 20 Ptot (W) 16 12 conduction angle, α (degrees) 30 60 90 120 180 form factor a 2.816 1.967 1.570 1.329 1.110 8 α α 003a a b808 75 α = 180° 1 2 0° Tmb (max) (°C) 85 90° 60° 95 3 0° 105 4 115 0 0369 α = conduction angle a = form factor = IT(RMS) / IT(AV) Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values 103 ITSM (A) IT(RMS) (A) 125 12 003aab806 (1) 102 IT ITSM t tp Tj(init) = 25 °C max 10 10-5 10-4 10-3 10-2 tp (s) 10-1 tp ≤ 20 ms (1) dIT/dt limit Fig. 4. Non-repetitive peak on-state current as a function of pulse duration; maximum values BTA312Y-600C Product data sheet All inform.


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