DatasheetsPDF.com

BTA316B-800C Dataheets PDF



Part Number BTA316B-800C
Manufacturers WeEn
Logo WeEn
Description 3Q Hi-Com Triac
Datasheet BTA316B-800C DatasheetBTA316B-800C Datasheet (PDF)

BTA316B-800C 3Q Hi-Com Triac Rev.02 - 06 May 2019 Product data sheet 1. General description Planar passivated high commutation three quadrant triac in a TO263 plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. This "series C" triac will commutate the full RMS current at the maximum rated junction temperature without the aid of a snubber. 2. Features and benefits • 3Q technology for improved noise immunity • High commutation capability wi.

  BTA316B-800C   BTA316B-800C



Document
BTA316B-800C 3Q Hi-Com Triac Rev.02 - 06 May 2019 Product data sheet 1. General description Planar passivated high commutation three quadrant triac in a TO263 plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. This "series C" triac will commutate the full RMS current at the maximum rated junction temperature without the aid of a snubber. 2. Features and benefits • 3Q technology for improved noise immunity • High commutation capability with maximum false trigger immunity • High immunity to false turn-on by dV/dt • High voltage capability • Planar passivated for voltage ruggedness and reliability • Surface mountable package • Triggering in three quadrants only 3. Applications • Electronic thermostats (heating and cooling) • High power motor controls e.g. washing machines and vacuum cleaners • Rectifier-fed DC inductive loads e.g. DC motors and solenoids 4. Quick reference data Table 1. Quick reference data Symbol Parameter Absolute maximum rating VDRM repetitive peak off-state voltage IT(RMS) RMS on-state current ITSM non-repetitive peak on- state current Tj junction temperature Symbol Parameter Static characteristics IGT gate trigger current Conditions full sine wave; Tmb ≤ 101 °C Fig. 1; Fig. 2; Fig. 3 full sine wave; Tj(init) = 25 °C; tp = 20 ms Fig. 4; Fig. 5 full sine wave; Tj(init) = 25 °C; tp = 16.7 ms Conditions VD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 °C; Fig. 7 VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C; Fig. 7 Values Unit 800 V 16 A 140 A 150 125 Min Typ A °C Max Unit 2 - 2 - 35 mA 35 mA WeEn Semiconductors BTA316B-800C 3Q Hi-Com Triac Symbol Parameter Static characteristics IGT gate trigger current IH holding current VT on-state voltage Dynamic characteristics dVD/dt rate of rise of off-state voltage dIcom/dt rate of change of commutating current Conditions VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 °C; Fig. 7 VD = 12 V; Tj = 25 °C; Fig. 9 IT = 18 A; Tj = 25 °C; Fig. 10 VDM = 536 V; Tj = 125 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit VD = 400 V; Tj = 125 °C; IT(RMS) = 16 A; dVcom/dt = 20 V/μs; (snubberless condition); gate open circuit 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 T1 main terminal 1 2 T2 main terminal 2 3 G gate mb T2 mounting base; main terminal 2 2 1 3 Min Typ Max Unit 2 - 35 mA - - 35 mA - 1.3 1.5 V 500 - - V/μs 15 - - A/ms Graphic symbol T2 T1 G sym051 6. Ordering information Table 3. Ordering information Type number Package Orderable part number Name BTA316B-800C TO263 BTA316B-800CJ Packing method Reel Small packing quantity 800 Package version TO263E Package issue date 26-May-2017 7. Marking Table 4. Marking codes Type number BTA316B-800C Marking codes BTA316B-800C BTA316B-800C Product data sheet All information provided in this document is subject to legal disclaimers. 06 May 2019 © WeE.


BTA316B-800B BTA316B-800C BTA316X-600B


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)