Document
BTA316B-800C
3Q Hi-Com Triac
Rev.02 - 06 May 2019
Product data sheet
1. General description
Planar passivated high commutation three quadrant triac in a TO263 plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. This "series C" triac will commutate the full RMS current at the maximum rated junction temperature without the aid of a snubber.
2. Features and benefits
• 3Q technology for improved noise immunity • High commutation capability with maximum false trigger immunity • High immunity to false turn-on by dV/dt • High voltage capability • Planar passivated for voltage ruggedness and reliability • Surface mountable package • Triggering in three quadrants only
3. Applications
• Electronic thermostats (heating and cooling) • High power motor controls e.g. washing machines and vacuum cleaners • Rectifier-fed DC inductive loads e.g. DC motors and solenoids
4. Quick reference data
Table 1. Quick reference data Symbol Parameter
Absolute maximum rating
VDRM
repetitive peak off-state voltage
IT(RMS)
RMS on-state current
ITSM
non-repetitive peak on-
state current
Tj
junction temperature
Symbol Parameter
Static characteristics
IGT
gate trigger current
Conditions
full sine wave; Tmb ≤ 101 °C Fig. 1; Fig. 2; Fig. 3 full sine wave; Tj(init) = 25 °C; tp = 20 ms Fig. 4; Fig. 5 full sine wave; Tj(init) = 25 °C; tp = 16.7 ms
Conditions
VD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 °C; Fig. 7 VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C; Fig. 7
Values
Unit
800
V
16
A
140
A
150 125 Min Typ
A °C Max Unit
2
-
2
-
35
mA
35
mA
WeEn Semiconductors
BTA316B-800C
3Q Hi-Com Triac
Symbol Parameter
Static characteristics
IGT
gate trigger current
IH
holding current
VT
on-state voltage
Dynamic characteristics
dVD/dt
rate of rise of off-state voltage
dIcom/dt rate of change of commutating current
Conditions
VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 °C; Fig. 7 VD = 12 V; Tj = 25 °C; Fig. 9 IT = 18 A; Tj = 25 °C; Fig. 10
VDM = 536 V; Tj = 125 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit VD = 400 V; Tj = 125 °C; IT(RMS) = 16 A; dVcom/dt = 20 V/μs; (snubberless condition); gate open circuit
5. Pinning information
Table 2. Pinning information
Pin
Symbol Description
Simplified outline
1
T1
main terminal 1
2
T2
main terminal 2
3
G
gate
mb
T2
mounting base; main terminal 2
2
1
3
Min Typ Max Unit
2
-
35
mA
-
-
35
mA
-
1.3 1.5 V
500 -
-
V/μs
15
-
-
A/ms
Graphic symbol
T2
T1
G sym051
6. Ordering information
Table 3. Ordering information
Type number
Package Orderable part number Name
BTA316B-800C TO263 BTA316B-800CJ
Packing method
Reel
Small packing quantity
800
Package version
TO263E
Package issue date
26-May-2017
7. Marking
Table 4. Marking codes Type number BTA316B-800C
Marking codes BTA316B-800C
BTA316B-800C
Product data sheet
All information provided in this document is subject to legal disclaimers.
06 May 2019
© WeE.