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BTA316X-800B0 Dataheets PDF



Part Number BTA316X-800B0
Manufacturers WeEn
Logo WeEn
Description 3Q Hi-Com Triac
Datasheet BTA316X-800B0 DatasheetBTA316X-800B0 Datasheet (PDF)

BTA316X-800B0 3Q Hi-Com Triac 12 September 2018 Product data sheet 1. General description Planar passivated high commutation three quadrant triac in a SOT186A (TO-220F) "full pack" plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. This "series B0" triac will commutate the full rated RMS current at the maximum rated junction temperature without the aid of a snubber. 2. Features and benefits • 3Q technology for improved noise immunity • H.

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BTA316X-800B0 3Q Hi-Com Triac 12 September 2018 Product data sheet 1. General description Planar passivated high commutation three quadrant triac in a SOT186A (TO-220F) "full pack" plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. This "series B0" triac will commutate the full rated RMS current at the maximum rated junction temperature without the aid of a snubber. 2. Features and benefits • 3Q technology for improved noise immunity • High immunity to false turn-on by dV/dt • High minimum IGT for guaranteed immunity to gate noise • High voltage capability • Isolated mounting base package • Least sensitive gate for highest noise immunity • Planar passivated for voltage ruggedness and reliability • Triggering in three quadrants only • Very high commutation capability with maximum false trigger immunity 3. Applications • Electronic thermostats • High power motor controls - e.g. washing machines and vacuum cleaners • Rectifier-fed DC inductive loads e.g. DC motors and solenoids • Refrigeration and air conditioning compressors 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDRM repetitive peak offstate voltage IT(RMS) RMS on-state current full sine wave; Th ≤ 45 °C; Fig. 1; Fig. 2; Fig. 3 ITSM non-repetitive peak on- full sine wave; Tj(init) = 25 °C; state current tp = 20 ms; Fig. 4; Fig. 5 full sine wave; Tj(init) = 25 °C; tp = 16.7 ms Tj junction temperature Static characteristics IGT gate trigger current VD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 °C; Fig. 7 Min Typ Max Unit - - 800 V - - 16 A - - 140 A - - 150 A - - 125 °C 10 - 50 mA WeEn Semiconductors BTA316X-800B0 3Q Hi-Com Triac Symbol Parameter IH holding current VT on-state voltage Dynamic characteristics dVD/dt rate of rise of off-state voltage dIcom/dt rate of change of commutating current Conditions VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C; Fig. 7 VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 °C; Fig. 7 VD = 12 V; Tj = 25 °C; Fig. 9 IT = 18 A; Tj = 25 °C; Fig. 10 VDM = 536 V; Tj = 125 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit VD = 400 V; Tj = 125 °C; IT(RMS) = 16 A; dVcom/dt = 20 V/µs; (snubberless condition); gate open circuit Min Typ Max Unit 10 - 50 mA 10 - 50 mA - - 60 mA - 1.3 1.5 V 2500 - - V/µs 20 - - A/ms 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 T1 main terminal 1 2 T2 main terminal 2 3 G gate mb n.c. mounting base; isolated Simplified outline mb Graphic symbol T2 sym051 T1 G 1 23 TO-220F (SOT186A) 6. Ordering information Table 3. Ordering information Type number Package Name BTA316X-800B0 TO-220F Description plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3-lead TO-220 "full pack" Version SOT186A BTA316X-800B0 Product data sheet All information provided in this document is subject to legal disclaimers. 12 September 2018 © WeEn Semiconductors Co., Ltd. 20.


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