Document
BTA316X-800B0
3Q Hi-Com Triac
12 September 2018
Product data sheet
1. General description
Planar passivated high commutation three quadrant triac in a SOT186A (TO-220F) "full pack" plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. This "series B0" triac will commutate the full rated RMS current at the maximum rated junction temperature without the aid of a snubber.
2. Features and benefits
• 3Q technology for improved noise immunity • High immunity to false turn-on by dV/dt • High minimum IGT for guaranteed immunity to gate noise • High voltage capability • Isolated mounting base package • Least sensitive gate for highest noise immunity • Planar passivated for voltage ruggedness and reliability • Triggering in three quadrants only • Very high commutation capability with maximum false trigger immunity
3. Applications
• Electronic thermostats • High power motor controls - e.g. washing machines and vacuum cleaners • Rectifier-fed DC inductive loads e.g. DC motors and solenoids • Refrigeration and air conditioning compressors
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDRM
repetitive peak offstate voltage
IT(RMS)
RMS on-state current full sine wave; Th ≤ 45 °C; Fig. 1; Fig. 2; Fig. 3
ITSM non-repetitive peak on- full sine wave; Tj(init) = 25 °C;
state current
tp = 20 ms; Fig. 4; Fig. 5
full sine wave; Tj(init) = 25 °C; tp = 16.7 ms
Tj junction temperature
Static characteristics
IGT
gate trigger current
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 7
Min Typ Max Unit - - 800 V - - 16 A - - 140 A - - 150 A - - 125 °C
10 -
50 mA
WeEn Semiconductors
BTA316X-800B0
3Q Hi-Com Triac
Symbol
Parameter
IH holding current
VT on-state voltage
Dynamic characteristics
dVD/dt
rate of rise of off-state voltage
dIcom/dt
rate of change of commutating current
Conditions
VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 °C; Fig. 7
VD = 12 V; Tj = 25 °C; Fig. 9
IT = 18 A; Tj = 25 °C; Fig. 10
VDM = 536 V; Tj = 125 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit
VD = 400 V; Tj = 125 °C; IT(RMS) = 16 A; dVcom/dt = 20 V/µs; (snubberless condition); gate open circuit
Min Typ Max Unit
10 -
50 mA
10 -
50 mA
- - 60 mA - 1.3 1.5 V
2500 - - V/µs
20 - - A/ms
5. Pinning information
Table 2. Pinning information Pin Symbol Description 1 T1 main terminal 1 2 T2 main terminal 2 3 G gate mb n.c. mounting base; isolated
Simplified outline
mb
Graphic symbol
T2 sym051
T1 G
1 23
TO-220F (SOT186A)
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
BTA316X-800B0
TO-220F
Description
plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3-lead TO-220 "full pack"
Version SOT186A
BTA316X-800B0
Product data sheet
All information provided in this document is subject to legal disclaimers.
12 September 2018
© WeEn Semiconductors Co., Ltd. 20.