Document
BTA425X-800BT
3Q Hi-Com Triac
12 September 2018
Product data sheet
1. General description
Planar passivated high commutation three quadrant triac in a SOT186A (TO-220F) "full pack" plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. This "series BT" triac will commutate the full RMS current at the maximum rated junction temperature (Tj(max) = 150 °C) without the aid of a snubber. It is used in applications where "high junction operating temperature capability" is required.
2. Features and benefits
• 3Q technology for improved noise immunity • High commutation capability with maximum false trigger immunity • High immunity to false turn-on by dV/dt • High junction operating temperature capability • High voltage capability • Isolated mounting base package • Least sensitive gate for highest noise immunity • Planar passivated for voltage ruggedness and reliability • Triggering in three quadrants only
3. Applications
• Applications subject to high temperature • Heating controls • High power motor control • High power switching
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDRM
repetitive peak offstate voltage
IT(RMS)
RMS on-state current full sine wave; Th ≤ 63 °C; Fig. 1; Fig. 2; Fig. 3
ITSM non-repetitive peak on- full sine wave; Tj(init) = 25 °C;
state current
tp = 20 ms; Fig. 4; Fig. 5
full sine wave; Tj(init) = 25 °C; tp = 16.7 ms
Tj junction temperature
Static characteristics
Min Typ Max Unit - - 800 V - - 25 A - - 250 A - - 275 A - - 150 °C
WeEn Semiconductors
BTA425X-800BT
3Q Hi-Com Triac
Symbol IGT
Parameter gate trigger current
IH holding current
VT on-state voltage
Dynamic characteristics
dVD/dt
rate of rise of off-state voltage
dIcom/dt
rate of change of commutating current
Conditions
VD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 °C; Fig. 7
VD = 12 V; Tj = 25 °C; Fig. 9
IT = 35 A; Tj = 25 °C; Fig. 10
VDM = 536 V; Tj = 150 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit
VD = 400 V; Tj = 150 °C; IT(RMS) = 25 A; dVcom/dt = 20 V/µs; (snubberless condition); gate open circuit
Min Typ Max Unit - - 50 mA - - 50 mA - - 50 mA - - 75 mA - 1.2 1.5 V
2000 - - V/µs
15 - - A/ms
5. Pinning information
Table 2. Pinning information Pin Symbol Description 1 T1 main terminal 1 2 T2 main terminal 2 3 G gate mb n.c. mounting base; isolated
Simplified outline
mb
Graphic symbol
T2 sym051
T1 G
1 23
TO-220F (SOT186A)
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
BTA425X-800BT
TO-220F
Description
plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3-lead TO-220 "full pack"
Version SOT186A
BTA425X-800BT
Product data sheet
All information provided in this document is subject to legal disclaimers.
12 September 2018
© WeEn Semiconductors Co., Ltd. 2018. All rights reserved
2 / 13
WeEn Semiconductors
BTA425X-800BT
3Q Hi-Com Triac
7. Limiting values
Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDRM
repetitive peak off-state voltage
IT(RMS)
RMS on-state current
full sine wave; Th ≤ 63 °C; Fig. 1; Fig. 2; Fig. 3
ITSM non-repetitive peak on- full sine wave; Tj(init) = 25 °C; tp = 20 ms;
state current
Fig. 4; Fig. 5
full sine wave; Tj(init) = 25 °C; tp = 16.7 ms
I2t
I2t for fusing
tp = 10 ms; SIN
dIT/dt
rate of rise of on-state current
IG = 0.2 A
IGM peak gate current
PGM peak gate power
PG(AV)
average gate power
over any 20 ms period
Tstg storage temperature
Tj junction temperature
30 IT(RMS)
(A) 20
63 °C
aaa-013414
150 IT(RMS )
(A) 120
90
Min Max Unit - 800 V
- 25 A
- 250 A
- 275 A - 312.5 A²s - 100 A/µs
- 2A - 5W - 0.5 W -40 150 °C - 150 °C
aaa-013415
60 10
30
0 -50 0 50 100 150
Th (°C)
Fig. 1. RMS on-state current as a function of heatsink temperature; maximum values
010-2
10-1
1 10 surge duration (s)
f = 50 Hz; Th = 63 °C
Fig. 2. RMS on-state current as a function of surge duration; maximum values
BTA425X-800BT
Product data sheet
All information provided in this document is subject to legal disclaimers.
12 September 2018
© WeEn Semiconductors Co., Ltd. 2018. All rights reserved
3 / 13
WeEn Semiconductors
40 conduction form
Ptot angle, α factor (W) (degrees) a
30 30 2.816 60 1.967 90 1.570 120 1.329 180 1.110
20
α α
10
BTA425X-800BT
3Q Hi-Com Triac
aaa-012993 13 Th(max) (°C)
α = 180 °C
120 °C 90 °C
41
60 °C
69
30 °C
97
0 0 5 10 15 20 25
α = conduction angle a = form factor = IT(RMS) / IT(AV) Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values
IT(RMS) (A)
125 30
300 ITSM (A)
250
aaa-012994
200
150
100 IT ITSM
50 0 1
t
1/f Tj(init) = 25 °C max 10 102 103 number of cycles (n)
f = 50 Hz
Fig. 4. .