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BTA425X-800BT Dataheets PDF



Part Number BTA425X-800BT
Manufacturers WeEn
Logo WeEn
Description 3Q Hi-ComTriac
Datasheet BTA425X-800BT DatasheetBTA425X-800BT Datasheet (PDF)

BTA425X-800BT 3Q Hi-Com Triac 12 September 2018 Product data sheet 1. General description Planar passivated high commutation three quadrant triac in a SOT186A (TO-220F) "full pack" plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. This "series BT" triac will commutate the full RMS current at the maximum rated junction temperature (Tj(max) = 150 °C) without the aid of a snubber. It is used in applications where "high junction operating te.

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BTA425X-800BT 3Q Hi-Com Triac 12 September 2018 Product data sheet 1. General description Planar passivated high commutation three quadrant triac in a SOT186A (TO-220F) "full pack" plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. This "series BT" triac will commutate the full RMS current at the maximum rated junction temperature (Tj(max) = 150 °C) without the aid of a snubber. It is used in applications where "high junction operating temperature capability" is required. 2. Features and benefits • 3Q technology for improved noise immunity • High commutation capability with maximum false trigger immunity • High immunity to false turn-on by dV/dt • High junction operating temperature capability • High voltage capability • Isolated mounting base package • Least sensitive gate for highest noise immunity • Planar passivated for voltage ruggedness and reliability • Triggering in three quadrants only 3. Applications • Applications subject to high temperature • Heating controls • High power motor control • High power switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDRM repetitive peak offstate voltage IT(RMS) RMS on-state current full sine wave; Th ≤ 63 °C; Fig. 1; Fig. 2; Fig. 3 ITSM non-repetitive peak on- full sine wave; Tj(init) = 25 °C; state current tp = 20 ms; Fig. 4; Fig. 5 full sine wave; Tj(init) = 25 °C; tp = 16.7 ms Tj junction temperature Static characteristics Min Typ Max Unit - - 800 V - - 25 A - - 250 A - - 275 A - - 150 °C WeEn Semiconductors BTA425X-800BT 3Q Hi-Com Triac Symbol IGT Parameter gate trigger current IH holding current VT on-state voltage Dynamic characteristics dVD/dt rate of rise of off-state voltage dIcom/dt rate of change of commutating current Conditions VD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 °C; Fig. 7 VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C; Fig. 7 VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 °C; Fig. 7 VD = 12 V; Tj = 25 °C; Fig. 9 IT = 35 A; Tj = 25 °C; Fig. 10 VDM = 536 V; Tj = 150 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit VD = 400 V; Tj = 150 °C; IT(RMS) = 25 A; dVcom/dt = 20 V/µs; (snubberless condition); gate open circuit Min Typ Max Unit - - 50 mA - - 50 mA - - 50 mA - - 75 mA - 1.2 1.5 V 2000 - - V/µs 15 - - A/ms 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 T1 main terminal 1 2 T2 main terminal 2 3 G gate mb n.c. mounting base; isolated Simplified outline mb Graphic symbol T2 sym051 T1 G 1 23 TO-220F (SOT186A) 6. Ordering information Table 3. Ordering information Type number Package Name BTA425X-800BT TO-220F Description plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3-lead TO-220 "full pack" Version SOT186A BTA425X-800BT Product data sheet All information provided in this document is subject to legal disclaimers. 12 September 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 2 / 13 WeEn Semiconductors BTA425X-800BT 3Q Hi-Com Triac 7. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions VDRM repetitive peak off-state voltage IT(RMS) RMS on-state current full sine wave; Th ≤ 63 °C; Fig. 1; Fig. 2; Fig. 3 ITSM non-repetitive peak on- full sine wave; Tj(init) = 25 °C; tp = 20 ms; state current Fig. 4; Fig. 5 full sine wave; Tj(init) = 25 °C; tp = 16.7 ms I2t I2t for fusing tp = 10 ms; SIN dIT/dt rate of rise of on-state current IG = 0.2 A IGM peak gate current PGM peak gate power PG(AV) average gate power over any 20 ms period Tstg storage temperature Tj junction temperature 30 IT(RMS) (A) 20 63 °C aaa-013414 150 IT(RMS ) (A) 120 90 Min Max Unit - 800 V - 25 A - 250 A - 275 A - 312.5 A²s - 100 A/µs - 2A - 5W - 0.5 W -40 150 °C - 150 °C aaa-013415 60 10 30 0 -50 0 50 100 150 Th (°C) Fig. 1. RMS on-state current as a function of heatsink temperature; maximum values 010-2 10-1 1 10 surge duration (s) f = 50 Hz; Th = 63 °C Fig. 2. RMS on-state current as a function of surge duration; maximum values BTA425X-800BT Product data sheet All information provided in this document is subject to legal disclaimers. 12 September 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 3 / 13 WeEn Semiconductors 40 conduction form Ptot angle, α factor (W) (degrees) a 30 30 2.816 60 1.967 90 1.570 120 1.329 180 1.110 20 α α 10 BTA425X-800BT 3Q Hi-Com Triac aaa-012993 13 Th(max) (°C) α = 180 °C 120 °C 90 °C 41 60 °C 69 30 °C 97 0 0 5 10 15 20 25 α = conduction angle a = form factor = IT(RMS) / IT(AV) Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values IT(RMS) (A) 125 30 300 ITSM (A) 250 aaa-012994 200 150 100 IT ITSM 50 0 1 t 1/f Tj(init) = 25 °C max 10 102 103 number of cycles (n) f = 50 Hz Fig. 4. .


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