Advance Technical Information
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
IXBT20N360HV IXBH20...
Advance Technical Information
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS
Transistor
IXBT20N360HV IXBH20N360HV
VCES = IC110 = VCE(sat)
3600V 20A 3.4V
Symbol Test Conditions
Maximum Ratings
VCES VCGR VGES VGEM IC25 IC110 ICM
SSOA (RBSOA)
TSC (SCSOA)
PC TJ TJM Tstg TL TSOLD Md Weight
TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M Continuous Transient
3600 3600
± 20 ± 30
TC = 25°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 10 Clamped Inductive Load
VGE = 15V, TJ = 125°C, RG = 52, VCE = 1500V, Non-Repetitive TC = 25°C
70 20 220 ICM = 160 VCES 1500
10 430 -55 ... +150 150 -55 ... +150
Maximum Lead Temperature for Soldering Plastic Body for 10s
300 260
Mounting Torque (TO-247HV)
1.13/10
TO-268HV TO-247HV
4 6
V V V V A A A
A V
μs W °C °C °C °C °C Nm/lb.in g g
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
BVCES
IC = 250μA, VGE = 0V
VGE(th)
IC = 250μA, VCE = VGE
ICES VCE = VCES, VGE = 0V TJ = 125°C
IGES VCE = 0V, VGE = ± 20V
VCE(sat)
IC = 20A, VGE = 15V, Note 1 TJ = 125°C
Characteristic Values
Min.
Typ. Max.
3600
V
3.0 5.0 V
25 μA 500 μA
±100 nA
2.9 3.4 V 3.6 V
TO-268HV (IXBT)
G E C (Tab)
TO-247HV (IXBH)
G E C
G = Gate E = Emitter
C (Tab)
C = Collector Tab = Collector
Features
High Voltage Packages High Blocking Voltage High Peak Current Capability Low Saturation Voltage
Advantages
Low Gate Drive Requirement High Power Density
Applications
Switch-Mode and Resonant-Mode Power Suppli...