IXBH 40N160
High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor
N-Channel, Enhancement Mode
IC25 = 33 A VCES = 1...
IXBH 40N160
High Voltage BIMOSFETTM Monolithic Bipolar MOS
Transistor
N-Channel, Enhancement Mode
IC25 = 33 A VCES = 1600 V VCE(sat) = 6.2 V typ. tfi = 40 ns
C TO-247 AD
G E
G
C E
C (TAB)
G = Gate,
C = Collector,
E = Emitter,
TAB = Collector
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg TL Md Weight
Symbol
BVCES VGE(th) ICES
IGES VCE(sat)
Conditions
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ
Continuous Transient
Maximum Ratings
1600 1600
V V
±20 V ±30 V
TC = 25°C TC = 90°C TC = 25°C, 1 ms
VGE = 15 V, TVJ = 125°C, RG = 22 Ω VCE = 0.8·VCES Clamped inductive load, L = 100 µH
33 20 40
ICM = 40
A A A
A
TC = 25°C 1.6 mm (0.063 in) from case for 10 s
350
-55 ... +150 150
-55 ... +150 300
W
°C °C °C °C
Mounting torque
1.15/10 Nm/lb.in.
6g
Conditions
IC = 1 mA, VGE = 0 V IC = 2 mA, VCE = VGE VCE = 0.8·VCES VGE = 0 V VCE = 0 V, VGE = ±20 V IC = IC90, VGE = 15 V
Characteristic Values
(TJ = 25°C, unless otherwise specified) min. typ. max.
1600
V
4 8V
TJ = 25°C TJ = 125°C
400 µA 3 mA
± 500 nA
TJ = 125°C
6.2 7.1 V 7.8 V
Features
International standard package JEDEC TO-247 AD
High Voltage BIMOSFETTM - replaces high voltage Darlingtons and series connected MOSFETs - lower effective RDS(on)
Monolithic construction - high blocking voltage capability - very fast turn-off characteristics
MOS Gate turn-on - drive simplicity
Intrinsic diode
Applications
AC motor speed control DC servo and robot drives DC choppers Uni...
