Laser-Diode. DPGEW1S03H Datasheet

DPGEW1S03H Datasheet PDF


Part

DPGEW1S03H

Description

Low-Cost High-Power Laser-Diode

Manufacture

Excelitas

Page 6 Pages
Datasheet
Download DPGEW1S03H Datasheet


DPGEW1S03H Datasheet
DATASHEET
Photon Detection
PGEW Series of Single- and Multi-epi 905 nm Pulsed Semiconductor Lasers
Low-Cost High-Power Laser-Diode Family
The PGEW Series is ideal for commercial range finding applications.
Excelitas Technologies’ PGEW Series of single- and multi-epi 905 nm pulsed
semiconductor lasers consists of a series of devices having up to four active lasing
layers epitaxially grown on a single GaAs substrate chip. This multi-layer design
multiplies the output power by the number of epi-layers. For example, the QPGEW
quad laser at 225 µm active layer width, which has four epitaxially grown lasing
layers, delivers an output peak power close to 100 W.
The T1 ¾ (TO-like) plastic encapsulated package complements Excelitas' epi-cavity
lasers in hermetic metal packages and are ideally suited for high volume
applications. The lasers employ Excelitas’ novel multi-active area laser chips to
deliver high output power in a small emitting area.
The laser chips of the PGEW family feature stripe widths of 75 and 225 µm and
come as single (PGEW), double (DPGEW), triple (TPGEW), or quadruple (QPGEW)
epi-cavity version. These devices possess a 25° beam divergence in the direction
perpendicular to chip surface and a 10° beam spread within the junction plane.
The power output shows an excellent stability over the full MIL specification
temperature range. Structures are fabricated using metal organic chemical vapour
deposition (MOCVD).
Where fiber coupling applications are concerned, the transverse spacing of the
epi-cavity active area concentrates more optical power into a smaller geometry
allowing for increased optical power coupling into optical fibers.
Peak wavelength is centered near the maximum responsivity of most silicon
photodiodes. The PGEW lasers match especially well with devices from the
Excelitas epi-APD family C30737. The devices are ideally suited for applications
where cost is a primary concern and high volume production capacity is required.
www.excelitas.com
Page 1 of 6
Intensity of light is shown from
single-cavity, dual-cavity, triple-
cavity and quad-cavity lasers.
Key Features
Doubling, tripling or quadrupling
of the output power from a
single epi-cavity chip with a
small active area
Peak power over 100 W at 20 ns
pulse width
High reliability
Small emitting areas increase
fiber coupled output
Lower cost plastic packaging for
high volume
RoHS compliant
Applications
Laser range finding
Laser-based speed enforcement
IR-illumination
Laser skin therapy
PGEW Multi-epi series Rev.2016-05

DPGEW1S03H Datasheet
PGEW Series of Single-epi and Multi-epi 905 nm Pulsed Semiconductor Lasers
Low-Cost High-Power Laser-Diode Family for Commercial Range Finding
Table 1: PGEW Pulsed Laser Family Selection Guide
Device
Description
PGEW1SXXH Single chip laser Single epi-cavity
DPGEW1SXXH Single chip laser Double epi-cavity
TPGEW1SXXH Single chip laser Triple epi-cavity
QPGEW1SXXH Single chip laser Quad epi-cavity
Total # of
emitting
stripes
1
Typical peak power
at iFM, 100 ns, 10A
3 mils (75 µm)
stripe width
at iFM, 100 ns, 30A
9 mils (225 µm)
stripe width
6.5 W
23 W
2 13 W
45 W
3 20 W
70 W
4 25 W
85 W
Table 2: Maximum Ratings
Parameter
Peak reverse voltage
Pulse duration
Duty factor
Storage temperature
Operating temperature
Soldering for 5 seconds (leads only)
Symbol
VRM
tW
du
TS
TOP
Min Max
2
100
0.1
-55 105
-55 85
+260
Units
V
ns
%
°C
°C
°C
Table 3: Generic Electro Optical Specifications at 23°C
Parameter
Center wavelength of spectral envelope
Spectral bandwidth at 50% intensity points
Wavelength temperature coefficient
Beam spread (50% peak intensity) parallel to junction plane
Beam spread (50% peak intensity) perpendicular to junction plane
Symbol Min Typ Max Units
λC 895 905 915 nm
Δλ 5 nm
Δλ/ΔT
0.25
nm/°C
Θ|| 10 degrees
Θ| 25 degrees
Table 4: 75µm Stripe Width Family: Operating Characteristics at TOP=23°C, iFM=10A, tW=100ns, prr =1kHz
Parameter
PGEW1S03H DPGEW1S03H TPGEW1S03H QPGEW1S03H1 Units
Minimum Optical Power at iFM POmin
6
12
18
22.5 W
Typical Optical Power at iFM
POtyp
6.5
13
20
25 W
# of Emitting stripes
-1
2
3
4
Emitting area
75 X 1
75 X 5
75 X 10
75 X 15
µm
Maximum Peak forward Current
Typical lasing threshold current
Typical Forward voltage at iFM2
Typical Series Resistance
iFM
iTH
VF
R
10
0.5
2.4
0.10
10
0.75
6.4
0.23
10
0.75
10.6
0.41
10 A
0.75 A
14.7 V
0.52
Typical Bandgap Voltage Drop Vg
1.4
4.1
6.5
9.5
1. Operating pulse width for the QPGEW1S03H is 50ns
2. Excluding the voltage drop contribution due to the inductive element of the package, as estimated by
V
.
www.excelitas.com
Page 2 of 6
PGEW Multi-epi series Rev.2016-05


Features Datasheet pdf DATASHEET Photon Detection PGEW Series o f Single- and Multi-epi 905 nm Pulsed S emiconductor Lasers Low-Cost High-Power Laser-Diode Family The PGEW Series is ideal for commercial range finding app lications. Excelitas Technologies’ PG EW Series of single- and multi-epi 905 nm pulsed semiconductor lasers consists of a series of devices having up to fo ur active lasing layers epitaxially gro wn on a single GaAs substrate chip. Thi s multi-layer design multiplies the out put power by the number of epi-layers. For example, the QPGEW quad laser at 22 5 µm active layer width, which has fou r epitaxially grown lasing layers, deli vers an output peak power close to 100 W. The T1 ¾ (TO-like) plastic encapsul ated package complements Excelitas' epi -cavity lasers in hermetic metal packag es and are ideally suited for high volu me applications. The lasers employ Exce litas’ novel multi-active area laser chips to deliver high output power in a small emitting area. The laser chips of the PGEW family feature stri.
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