TPGEW1S03H

DATASHEET Photon Detection PGEW Series of Single- and Multi-epi 905 nm Pulsed Semiconductor Lasers Low-Cost High-Power Laser-Diode Family The PGEW Series is ideal for commercial range finding applications. Excelitas Technologies’ PGEW Series of single- and multi-epi 905 nm pulsed semiconductor lasers consists of a series of devices having up to four active lasing layers epitaxially grown on a single GaAs substrate chip. This multi-layer design multiplies the output power by the number of epi-layers. For example, the QPGEW quad laser at 225 µm active layer width, which has four epitaxially grown lasing layers, delivers an output peak power close to 100 W. The T1 ¾ (TO-like) plastic encapsulated package complements Excelitas' epi-cavity lasers in hermetic metal packages and are ideally suited for high volume applications. The lasers employ Excelitas’ novel multi-active area laser chips to deliver high output power in a small emitting area. The laser chips of the PGEW family feature stripe widths of 75 and 225 µm and come as single (PGEW), double (DPGEW), triple (TPGEW), or quadruple (QPGEW) epi-cavity version. These devices possess a 25° beam divergence in the direction perpendicular to chip surface and a 10° beam spread within the junction plane. The power output shows an excellent stability over the full MIL specification temperature range. Structures are fabricated using metal organic chemical vapour deposition (MOCVD). Where fiber coupling applications are concerned, the t...