VS-MBR1045-M3

www.vishay.com VS-MBR1035-M3, VS-MBR1045-M3 Vishay Semiconductors High Performance Schottky Rectifier, 10 A Base cathode 2 2L TO-220AC 13 Cathode Anode PRIMARY CHARACTERISTICS IF(AV) VR VF at IF IRM max. TJ max. EAS Package 10 A 35 V, 45 V 0.57 V 15 mA at 125 °C 150 °C 8 mJ 2L TO-220AC Circuit configuration Single FEATURES 150 °C TJ operation High frequency operation Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness and long term reliability Designed and qualified according to JEDEC®-JESD 47 Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION This Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS IF(AV) Rectangular waveform IFRM TC = 135 °C VRRM IFSM VF tp = 5 μs sine 10 Apk, TJ = 125 °C TJ Range VALUES 10 20 35/45 1060 0.57 -65 to +150 UNITS A V A V °C VOLTAGE RATINGS PARAMETER SYMBOL Maximum DC reverse voltage Maximum working peak reverse voltage VR VRWM VS-MBR1035-M3 35 VS-MBR1045-M3 45 UNITS V ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average forw...