EC103D1W

EC103D1W SCR 21 August 2018 Product data sheet 1. General description Planar passivated ultra sensitive gate Silicon Controlled Rectifier in a SOT223 surface mountable plastic package. 2. Features and benefits Planar passivated for voltage ruggedness and reliability Ultra sensitive gate Surface mountable package 3. Applications Electronic ballasts Safety shut down and protection circuits Sensing circuits Smoke detectors Switched Mode Power Supplies 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VRRM repetitive peak reverse voltage IT(AV) average on-state current half sine wave; Tsp ≤ 114 °C; Fig. 1 IT(RMS) RMS on-state current half sine wave; Tsp ≤ 114 °C; Fig. 2; Fig. 3 ITSM non-repetitive peak on- half sine wave; Tj(init) = 25 °C; state current tp = 10 ms; Fig. 4; Fig. 5 half sine wave; Tj(init) = 25 °C; tp = 8.3 ms Tj junction temperature Static characteristics IGT gate trigger current Dynamic characteristics VD = 12 V; IT = 0.1 A; Tj = 25 °C; Fig. 9 dVD/dt rate of rise of off-state voltage VDM = 268 V; Tj = 125 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit Min Typ Max Unit - - 400 V - - 0.5 A - - 0.8 A - - 8A - - 9A - - 125 °C - 3 12 µA - 150 - V/µs WeEn Semiconductors EC103D1W SCR 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 K cathode 4 2 A anode 3 G gate 4 mb mounting base; connected to 123 anode SC-73 (SOT223)...