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DXTN07100BFG Dataheets PDF



Part Number DXTN07100BFG
Manufacturers Diodes
Logo Diodes
Description 100V NPN HIGH PERFORMANCE TRANSISTOR
Datasheet DXTN07100BFG DatasheetDXTN07100BFG Datasheet (PDF)

DXTN07100BFG 100V NPN HIGH PERFORMANCE TRANSISTOR IN PowerDI3333-8 Features  BVCEO > 100V  Small Form Factor Thermally Efficient Package. Enables Higher Density End Products  IC = 2A High Continuous Current  ICM = 6A Peak Pulse Current  Low Saturation Voltage VCE(SAT) < 250mV @ 1A  Complementary PNP Type: DXTP07100BFG  Rated to +175°C–Ideal for High Temperature Environment  Wettable Flank for Improved Optical Inspection  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen .

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DXTN07100BFG 100V NPN HIGH PERFORMANCE TRANSISTOR IN PowerDI3333-8 Features  BVCEO > 100V  Small Form Factor Thermally Efficient Package. Enables Higher Density End Products  IC = 2A High Continuous Current  ICM = 6A Peak Pulse Current  Low Saturation Voltage VCE(SAT) < 250mV @ 1A  Complementary PNP Type: DXTP07100BFG  Rated to +175°C–Ideal for High Temperature Environment  Wettable Flank for Improved Optical Inspection  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3) PowerDI3333-8 (SWP) (Type UX) Mechanical Data  Case: PowerDI®3333-8  Case Material: Molded Plastic. “Green” Molding Compound. UL Flammability Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminals: Finish - Matte Tin Solderable per MIL-STD-202, Method 208  Weight: 0.03 grams (Approximate) Applications  Load Switch  Linear Regulator  MOSFET or IGBT Gate Driving Equivalent Circuit C C C C Top View B E E E Pin1 Bottom View Device Symbol Ordering Information (Note 4) Part Number Marking Reel Size (inches) Tape Width (mm) Quantity per Reel DXTN07100BFG-7 2H7 7 12 2,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. Marking Information PowerDI3333-8 (SWP) (Type UX) YYWW 2H7 2H7 = Product Type Marking Code YYWW = Date Code Marking YY = Last Two Digits of Year (ex: 18 = 2018) WW = Week Code (01 to 53) PowerDI is a registered trademark of Diodes Incorporated. DXTN07100BFG Document number: DS41044 Rev. 2 - 2 1 of 7 www.diodes.com October 2018 © Diodes Incorporated Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Pulse Current Symbol VCBO VCEO VEBO IC ICM DXTN07100BFG Value 120 100 7 2 6 Unit V V V A A Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Power Dissipation Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Leads (Note 8) Operating and Storage Temperature Range (Note 5) (Note 6) (Note 7) (Note 5) (Note 6) (Note 7) Symbol PD RJA RJL TJ, TSTG Value 0.9 2.1 3.1 140 65 44 8.5 -55 to +175 Unit W W W °C/W °C/W °C/W °C/W °C ESD Ratings (Note 9) Characteristic Electrostatic Discharge—Human Body Model Electrostatic Discharge—Machine Model Symbol ESD HBM ESD MM Value 4000 400 Unit V V JEDEC Class 3A C Notes: 5. For a device mounted with the collector tab on MRP FR4-PCB; device is measured under still air conditions whilst operating in a steady-state. 6. Same as Note 5, except the device is mounted on 25mm × 25mm 2oz copper. 7. Same as Note 5, except the device is mounted on 50mm × 50mm 2oz copper. 8. Thermal resistance from junction to solder-point (at the collector tab). 9. Refer to JEDEC specification JESD22-A114 and JESD22-A115. DXTN07100BFG Document number: DS41044 Rev. 2 - 2 2 of 7 www.diodes.com October 2018 © Diodes Incorporated Thermal Characteristics and Derating Information 10 VCE (Limit) 1 IC, COLLECTOR CURRENT (A) PW = 0.1ms 0.1 PW = 1ms PW = 10ms 0.01 TA = 25℃ PW = 100ms Single Nonrepetitive PW = 1s Pulse DUT mounted on DC 1*MRP FR-4 Board Max TJ = 175℃ 0.001 0.1 1 10 100 1000 VCE, COLLECTOR EMITTER VOLTAGE (V) SOA, Safe Operation Area TA = 25°C 25mm x 25mm 2oz FR-4 TA = 25°C 50mm x 50mm 2oz FR-4 DXTN07100BFG Single Pulse TA = 25°C 50mm x 50mm 2oz FR-4 25mm x 25mm 2oz FR-4 50mm x 50mm 2oz FR-4 25mm x 25mm 2oz FR-4 DXTN07100BFG Document number: DS41044 Rev. 2 - 2 3 of 7 www.diodes.com October 2018 © Diodes Incorporated Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 10) Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage (Note 10) Base-Emitter Saturation Voltage (Note 10) Base-Emitter Turn-On Voltage (Note 10) DC Current Gain (Note 10) Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(SAT) VBE(SAT) VBE(ON) hFE Min Typ 120 264 100 129 7 8.4 —— —— —— — 90 — 150 — 0.86 — 0.79 70 183 100 172 55 113 25 56 Current Gain-Bandwidth Product fT 140 Switching Time Output Capacitance tON tOFF COBO — — — Note: 10. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%. 175 80 120.


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