Document
DXTN07100BFG
100V NPN HIGH PERFORMANCE TRANSISTOR IN PowerDI3333-8
Features
BVCEO > 100V Small Form Factor Thermally Efficient Package. Enables Higher
Density End Products IC = 2A High Continuous Current ICM = 6A Peak Pulse Current Low Saturation Voltage VCE(SAT) < 250mV @ 1A Complementary PNP Type: DXTP07100BFG Rated to +175°C–Ideal for High Temperature Environment Wettable Flank for Improved Optical Inspection Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3)
PowerDI3333-8 (SWP) (Type UX)
Mechanical Data
Case: PowerDI®3333-8 Case Material: Molded Plastic. “Green” Molding Compound.
UL Flammability Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish - Matte Tin Solderable per MIL-STD-202,
Method 208 Weight: 0.03 grams (Approximate)
Applications
Load Switch Linear Regulator MOSFET or IGBT Gate Driving
Equivalent Circuit
C C C
C
Top View
B E E E
Pin1
Bottom View
Device Symbol
Ordering Information (Note 4)
Part Number
Marking
Reel Size (inches)
Tape Width (mm)
Quantity per Reel
DXTN07100BFG-7
2H7
7
12 2,000
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
PowerDI3333-8 (SWP) (Type UX)
YYWW
2H7
2H7 = Product Type Marking Code YYWW = Date Code Marking YY = Last Two Digits of Year (ex: 18 = 2018) WW = Week Code (01 to 53)
PowerDI is a registered trademark of Diodes Incorporated.
DXTN07100BFG
Document number: DS41044 Rev. 2 - 2
1 of 7 www.diodes.com
October 2018
© Diodes Incorporated
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Pulse Current
Symbol
VCBO VCEO VEBO
IC ICM
DXTN07100BFG
Value 120 100 7 2 6
Unit V V V A A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Power Dissipation
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Leads (Note 8) Operating and Storage Temperature Range
(Note 5) (Note 6) (Note 7) (Note 5) (Note 6) (Note 7)
Symbol PD
RJA RJL TJ, TSTG
Value 0.9 2.1 3.1 140 65 44 8.5
-55 to +175
Unit W W W °C/W °C/W °C/W °C/W
°C
ESD Ratings (Note 9)
Characteristic Electrostatic Discharge—Human Body Model Electrostatic Discharge—Machine Model
Symbol ESD HBM ESD MM
Value 4000 400
Unit V V
JEDEC Class 3A C
Notes:
5. For a device mounted with the collector tab on MRP FR4-PCB; device is measured under still air conditions whilst operating in a steady-state. 6. Same as Note 5, except the device is mounted on 25mm × 25mm 2oz copper. 7. Same as Note 5, except the device is mounted on 50mm × 50mm 2oz copper. 8. Thermal resistance from junction to solder-point (at the collector tab). 9. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
DXTN07100BFG
Document number: DS41044 Rev. 2 - 2
2 of 7 www.diodes.com
October 2018
© Diodes Incorporated
Thermal Characteristics and Derating Information
10 VCE (Limit)
1
IC, COLLECTOR CURRENT (A)
PW = 0.1ms 0.1 PW = 1ms
PW = 10ms
0.01
TA = 25℃
PW = 100ms
Single Nonrepetitive PW = 1s
Pulse DUT mounted on
DC
1*MRP FR-4 Board
Max TJ = 175℃ 0.001
0.1 1 10 100
1000
VCE, COLLECTOR EMITTER VOLTAGE (V) SOA, Safe Operation Area
TA = 25°C 25mm x 25mm 2oz FR-4
TA = 25°C 50mm x 50mm 2oz FR-4
DXTN07100BFG
Single Pulse TA = 25°C
50mm x 50mm 2oz FR-4
25mm x 25mm 2oz FR-4
50mm x 50mm 2oz FR-4
25mm x 25mm 2oz FR-4
DXTN07100BFG
Document number: DS41044 Rev. 2 - 2
3 of 7 www.diodes.com
October 2018
© Diodes Incorporated
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 10) Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage (Note 10) Base-Emitter Saturation Voltage (Note 10) Base-Emitter Turn-On Voltage (Note 10)
DC Current Gain (Note 10)
Symbol BVCBO BVCEO BVEBO
ICBO IEBO VCE(SAT) VBE(SAT) VBE(ON)
hFE
Min Typ
120 264 100 129
7 8.4 —— —— —— — 90 — 150 — 0.86 — 0.79 70 183 100 172 55 113 25 56
Current Gain-Bandwidth Product
fT 140
Switching Time Output Capacitance
tON tOFF COBO
— — —
Note:
10. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
175
80 120.