FDMS86181

MOSFET - Power, Single N-Channel, Shielded Gate, POWERTRENCH) 100 V, 124 A, 4.2 mW FDMS86181 General Description This N−Channel MV MOSFET is produced using onsemi’s advanced POWERTRENCH® process that incorporates Shielded Gate technology. This process has been optimized to minimise on−state resistance and yet maintain superior switching performance with best in class soft body diode. Features Shielded Gate MOSFET Technology Max rDS(on) = 4.2 mW at VGS = 10 V, ID = 44 A Max rDS(on) = 12 mW at VGS = 6 V, ID = 22 A ADD 50% lower Qrr than other MOSFET suppliers Lowers switching noise/EMI MSL1 robust package design 100% UIL tested RoHS Compliant Applications Primary DC−DC MOSFET Synchronous Rectifier in DC−DC and AC−DC Motor Drive Solar MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Value Unit VDS Drain to Source Voltage VGS Gate to Source Voltage ID Drain Current: − Continuous TC = 25°C (Note 5) − Continuous TC = 100°C (Note 5) − Continuous TA = 25°C (Note 1a) − Pulsed (Note 4) 100 V ±20 V A 124 78 17 510 EAS Single Pulse Avalanche Energy (Note 3) 337 mJ PD Power Dissipation: TC = 25°C TA = 25°C (Note 1a) W 125 2.5 TJ, TSTG Operating and Storage Junction Tempera- −55 to °C ture Range +150 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. DAT...