FDMS86101

MOSFET - N‐Channel, POWERTRENCH) 100 V, 60 A, 8 mW FDMS86101 General Description This N−Channel MOSFET is produced using ON Semiconductor’s advanced POWERTRENCH® process that has been especially tailored to minimize the on−state resistance and yet maintain superior switching performance. Features Max rDS(on) = 8 mW at VGS = 10 V, ID = 13 A Max rDS(on) = 13.5 mW at VGS = 6 V, ID = 9.5 A Advanced Package and Silicon combination for low rDS(on) and high efficiency MSL1 robust package design 100% UIL tested 100% Rg tested These Devices are Pb−Free and are RoHS Compliant Applications DC−DC Conversion MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Value Unit VDS Drain to Source Voltage 100 V VGS Gate to Source Voltage ±20 V ID Drain Current: A Continuous, TC = 25°C 60 Continuous, TA = 25°C (Note 1a) 12.4 Pulsed 200 EAS Single Pulse Avalanche Energy (Note 3) 173 mJ PD TJ, TSTG Power Dissipation: TC = 25°C TA = 25°C (Note 1a) Operating and Storage Junction Temperature Range W 104 2.5 −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. www.onsemi.com S D S D S D G D N-Channel MOSFET Top Bottom DDDD GS S S Power 56 (PQFN8) CASE 483AE MARKING DIAGRAM $Y&Z&3&K FDMS 86101 $Y &Z &3 &K FDMS86101 = ON Semiconductor Logo = Assembl...