FDMS86200

FDMS86200 MOSFET, N‐Channel, Shielded Gate, POWERTRENCH) 150 V, 35 A, 18 mW General Description This N−Channel MOSFET is produced using ON Semiconductor’s advanced POWERTRENCH® process that incorporates Shielded Gate technology. This process has been optimized for the on−state resistance and yet maintain superior switching performance. Features Shielded Gate MOSFET Technology Max rDS(on) = 18 mW at VGS = 10 V, ID = 9.6 A Max rDS(on) = 21 mW at VGS = 6 V, ID = 8.8 A Advanced Package and Silicon combination for low rDS(on) and high efficiency MSL1 robust package design 100% UIL tested RoHS Compliant Applications DC−DC Conversion MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Ratings Unit VDS Drain to Source Voltage VGS Gate to Source Voltage ID Drain Current: − Continuous TC = 25°C − Continuous TA = 25°C (Note 1a) − Pulsed 150 V ±20 V A 35 9.6 100 EAS PD TJ, TSTG Single Pulse Avalanche Energy (Note 3) Power Dissipation: TC = 25°C TA = 25°C (Note 1a) Operating and Storage Junction Temperature Range 220 104 2.5 −55 to +150 mJ W °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. www.onsemi.com SD SD SD GD N-Channel MOSFET Top Bottom SS S Pin G 1 DDDD Power 56 (PQFN8) CASE 483AE MARKING DIAGRAM SD S $Y&Z&3&K D FDMS S 86200 D GD $Y &Z &3 &K FDMS86200 = ...