SILICON TRANSISTOR. H1266 Datasheet

H1266 Datasheet PDF, Equivalent


Part Number

H1266

Description

PNP SILICON TRANSISTOR

Manufacture

Huashan

Total Page 2 Pages
PDF Download
Download H1266 Datasheet PDF


H1266 Datasheet
Shantou Huashan Electronic Devices Co.,Ltd.
PNP SILICON TRANSISTOR
H1266
APPLICATIONS
General Purpose Application.
Switching Application.
ABSOLUTE MAXIMUM RATINGSTa=25℃)
Tstg——Storage Temperature………………………… -55~150
Tj——Junction Temperature…………………………………150
PC——Collector Dissipation…………………………………400mW
VCBO——Collector-Base Voltage………………………………-50V
VCEO——Collector-Emitter Voltage……………………………-50V
VEBO——Emitter-Base Voltage………………………………-5V
IC——Collector Current………………………………………-150mA
Ib——Base Current……………………………………………-50mA
TO-92
1EmitterE
2CollectorC
3BaseB
ELECTRICAL CHARACTERISTICSTa=25℃)
Symbol
Characteristics
Min Typ Max Unit
Test Conditions
BVCBO Collector-Base Breakdown Voltage
-50
V IC=-100μA, IE=0
BVCEO Collector-Emitter Breakdown Voltage
-50
V IC=-1mA, IB=0
BVEBO Emitter-Base Breakdown Voltage
-5
V IE=-10μAIC=0
HFE1DC Current Gain
70 400 VCE=-6V, IC=-2mA
HFE2DC Current Gain
25
VCE=-6V, IC=-150mA
VCE(sat) Collector- Emitter Saturation Voltage
-0.1 -0.3 V IC=-100mA, IB=-10mA
VBE(sat) Base-Emitter Saturation Voltage
-1.1 V IC=-100mA, IB=-10mA
ICBO Collector Cut-off Current
-100 nA VCB=-50V, IE=0
IEBO Emitter Cut-off Current
-100 nA VEB=-5V, IC=0
fT Current Gain-Bandwidth Product
80
MHz VCE=-10V, IC=-10mA
Cob Output Capacitance
4 7 pF VCB=-50V, IE=0f=1MHz
hFE Classification
O
70—140
Y
120—240
GR
200—400

H1266 Datasheet
Shantou Huashan Electronic Devices Co.,Ltd.
H1266


Features Datasheet pdf Shantou Huashan Electronic Devices Co.,L td. PNP SILICON TRANSISTOR H1266 █ APPLICATIONS General Purpose Applicatio n. Switching Application. █ ABSOLUTE MAXIMUM RATINGS(Ta=25℃) Tstg— Storage Temperature……………… ……… -55~150℃ Tj——Junction Temperature……………………… …………150℃ PC——Collector Di ssipation………………………… ………400mW VCBO——Collector-Base Voltage………………………… …-50V VCEO——Collector-Emitter V oltage…………………………… -50V VEBO——Emitter-Base Voltage… …………………………-5V IC —Collector Current…………… ………………………-150mA Ib —Base Current………………… ………………………-50mA TO-9 2 1―EmitterE 2―CollectorC 3―BaseB █ ELECTRICAL CHARACTERISTICS(Ta=2 5℃) Symbol Characteristics Min T yp Max Unit Test Conditions BVCBO Col lector-Base Breakdown Voltage -50 V IC=-100μA, IE=0 BVCEO Collector-Emitter Breakdown Voltage -50 V IC=-1mA, IB=0 BVEBO Emitter-Base Breakdown Voltage -5 V IE=-10μAIC=0 HFE(1) DC Current Gain 70 400 VCE=-6V, IC=-2mA HFE(2) DC Current Gain 25 VCE=-6V, IC=-150mA VCE(sat) Collector- Emitter Saturation Voltage -0.1 -.
Keywords H1266, datasheet, pdf, Huashan, PNP, SILICON, TRANSISTOR, 1266, 266, 66, H126, H12, H1, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)