SILICON TRANSISTOR. H1008 Datasheet

H1008 Datasheet PDF, Equivalent


Part Number

H1008

Description

NPN SILICON TRANSISTOR

Manufacture

Huashan

Total Page 2 Pages
PDF Download
Download H1008 Datasheet PDF


H1008 Datasheet
Shantou Huashan Electronic Devices Co.,Ltd.
NPN S I LI C O N T R AN S I S T O
H1008
ABSOLUTE MAXIMUM RATINGSTa=25℃)
Tstg——Storage Temperature………………………… -55~150
Tj——Junction Temperature…………………………………150
PC——Collector Dissipation…………………………………800mW
VCBO——Collector-Base Voltage………………………………80V
VCEO——Collector-Emitter Voltage……………………………60V
VEBO——Emitter-Base Voltage………………………………8V
IC——Collector Current……………………………………700mA
TO-92
1EmitterE
2BaseB
3CollectorC
ELECTRICAL CHARACTERISTICSTa=25℃)
Symbol
ICBO
IEBO
HFE(1)
VCE(sat)
VBE(sat)
BVCBO
BVCEO
BVEBO
fT
Cob
Characteristics
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector- Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Current Gain-Bandwidth Product
Output Capacitance
hFE Classification
Min Typ Max Unit
Test Conditions
100 nA VCB=60V, IE=0
100 nA VEB=5V, IC=0
40 400 VCE=2V, IC=50mA
0.2 0.4 V IC=500mA, IB=50mA
0.86 1.1 V IC=500mA, IB=50mA
80 V IC=100μA, IE=0
60 V IC=10mA, IB=0
8 V IE=10μAIC=0
30 50
MHz VCE=10V, IC=50mA
8 pF VCB=10V, IE=0f=1MHz
R
40—80
O
70—140
Y
120—240
GR
240—400

H1008 Datasheet
Shantou Huashan Electronic Devices Co.,Ltd.
H1008


Features Datasheet pdf Shantou Huashan Electronic Devices Co.,L td. NPN S I LI C O N T R AN S I S T O H1008 █ █ ABSOLUTE MAXIMUM RATING S(Ta=25℃) Tstg——Storage Tempe rature………………………… -5 5~150℃ Tj——Junction Temperature ………………………………15 0℃ PC——Collector Dissipation… ……………………………800mW VCBO——Collector-Base Voltage…… …………………………80V VCEO —Collector-Emitter Voltage……… ……………………60V VEBO——E mitter-Base Voltage……………… ……………8V IC——Collector Cu rrent…………………………… ……700mA TO-92 1―EmitterE 2―B aseB 3―CollectorC █ ELECTRICAL CHA RACTERISTICS(Ta=25℃) Symbol ICBO IEBO HFE(1) VCE(sat) VBE(sat) BVCBO BV CEO BVEBO fT Cob Characteristics Colle ctor Cut-off Current Emitter Cut-off Cu rrent DC Current Gain Collector- Emitte r Saturation Voltage Base-Emitter Satur ation Voltage Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Current Gain-Bandwidth Product Output Capacitance █ hFE Classification Min Typ Max Unit Test Conditions 100 nA VCB=60V, IE=0 100 nA VEB=5V, IC=0 40 400 VCE=2V, IC=50mA .
Keywords H1008, datasheet, pdf, Huashan, NPN, SILICON, TRANSISTOR, 1008, 008, 08, H100, H10, H1, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)