SILICON TRANSISTOR. H1302 Datasheet

H1302 Datasheet PDF, Equivalent


Part Number

H1302

Description

NPN SILICON TRANSISTOR

Manufacture

Huashan

Total Page 1 Pages
PDF Download
Download H1302 Datasheet PDF


H1302 Datasheet
Shantou Huashan Electronic Devices Co.,Ltd.
NPN S I LI C O N T R AN S I S T O
H1302
AUDIO MUTING APPLICATION.
ABSOLUTE MAXIMUM RATINGSTa=25℃)
Tstg——Storage Temperature………………………… -55~150
Tj——Junction Temperature…………………………………150
PC——Collector Dissipation…………………………………400mW
VCBO——Collector-Base Voltage………………………………25V
VCEO——Collector-Emitter Voltage……………………………20V
VEBO——Emitter-Base Voltage………………………………12V
ICIC——ColCleocltolercCtourrreCnutrrent………………………………………………………………300mA300mA
IB——Base Current……………………………………………30mA
TO-92
1EmitterE
2CollectorC
3BaseB
ELECTRICAL CHARACTERISTICSTa=25℃)
Symbol
Characteristics
Min Typ Max Unit
Test Conditions
ICBO Collector Cut-off Current
100 nA VCB=25V, IE=0
IEBO Emitter Cut-off Current
100 nA VEB=12V, IC=0
HFE DC Current Gain
200 800 VCE=2V, IC=4mA
VCE(sat) Collector- Emitter Saturation Voltage
0.25 V IC=100mA, IB=10mA
VBE(sat) Base-Emitter Saturation Voltage
1.0 V IC=100mA, IB=10mA
fT Current Gain-Bandwidth Product
60 MHz VCE=10V, IC=1mA
Cob Output Capacitance
10 pF VCB=10V, IE=0f=1MHz
hFE Classification
A
200—350
B
300—500
C
400—800


Features Datasheet pdf Shantou Huashan Electronic Devices Co.,L td. NPN S I LI C O N T R AN S I S T O H1302 █ AUDIO MUTING APPLICATION. ABSOLUTE MAXIMUM RATINGS(Ta=25℃ Tstg——Storage Temperature…… ………………… -55~150℃ Tj— —Junction Temperature…………… …………………150℃ PC——C ollector Dissipation……………… ………………400mW VCBO——Col lector-Base Voltage……………… ……………25V VCEO——Collector -Emitter Voltage………………… ………20V VEBO——Emitter-Base Vo ltage…………………………… 12V IC—IC——C—olCleocltolercCt ourrreCnut…rre…nt……………… ………………………………… ……………30…0m…A300mA IB— Base Current…………………… ……………………30mA TO-92 1 EmitterE 2―CollectorC 3―BaseB ELECTRICAL CHARACTERISTICS(Ta=25℃ ) Symbol Characteristics Min Typ M ax Unit Test Conditions ICBO Collector Cut-off Current 100 nA VCB=25V, IE=0 IEBO Emitter Cut-off Current 100 nA VEB=12V, IC=0 HFE DC Current Gain 200 800 VCE=2V, IC=4mA VCE(sat) Collector- Emitter Saturation Voltage 0.25 V IC=100mA, IB=10mA VBE(sat) Base-Emitter Saturation Voltage 1.0 V IC=100mA, IB=10mA fT Current Gain-Bandwidth Product 60 MHz.
Keywords H1302, datasheet, pdf, Huashan, NPN, SILICON, TRANSISTOR, 1302, 302, 02, H130, H13, H1, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)