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H1246

Huashan

NPN SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd. NPN S I LI C O N T R AN S I S T O H1246 █ POWER SUPPLIES,RELAY DRIVERS, LA...


Huashan

H1246

File Download Download H1246 Datasheet


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Shantou Huashan Electronic Devices Co.,Ltd. NPN S I LI C O N T R AN S I S T O H1246 █ POWER SUPPLIES,RELAY DRIVERS, LAMP DRIVERS,ELECTRICAL EQUIPMENT █ ABSOLUTE MAXIMUM RATINGS(Ta=25℃) Tstg——Storage Temperature………………………… -55~150℃ Tj——Junction Temperature…………………………………150℃ PC——Collector Dissipation…………………………………750mW VCBO——Collector-Base Voltage………………………………30V VCEO——Collector-Emitter Voltage……………………………25V VEBO——Emitter-Base Voltage………………………………6V IC——Collector Current……………………………………2A TO-92 1―Emitter,E 2―Collector,C 3―Base,B █ ELECTRICAL CHARACTERISTICS(Ta=25℃) Symbol Characteristics BVCBO Collector-Base Breakdown Voltage BVCEO Collector-Emitter Breakdown Voltage BVEBO Emitter-Base Breakdown Voltage HFE(1) DC Current Gain HFE(2) VCE(sat) Collector- Emitter Saturation Voltage VBE(sat) Base-Emitter Saturation Voltage ICBO Collector Cut-off Current IEBO Emitter Cut-off Current fT Current Gain-Bandwidth Product Cob Output Capacitance * pulse █ hFE Classification Min Typ Max Unit Test Conditions 30 V IC=10μA, IE=0 25 V IC=1mA, IB=0 6 V IE=10μA,IC=0 100 560 VCE=2V, IC=100mA 65 130 VCE=2V, IC=1.5A * 0.18 0.4 V IC=1.5A, IB=75mA * 0.85 1.2 V IC=1.5A, IB=75mA * 100 nA VCB=20V, IE=0 100 nA VEB=4V, IC=0 150 MHz VCE=10V, IC=50mA 19 pF VCB=10V, IE=0,f=1MHz R 100—200 S 140—280 T 200—400 U 280—560 Shantou Huashan Electronic Devices Co.,Ltd. H1246 Shantou Huashan Electronic Devices Co.,Ltd. H1246 ...




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