SILICON TRANSISTOR. H1246 Datasheet

H1246 Datasheet PDF, Equivalent


Part Number

H1246

Description

NPN SILICON TRANSISTOR

Manufacture

Huashan

Total Page 3 Pages
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H1246 Datasheet
Shantou Huashan Electronic Devices Co.,Ltd.
NPN S I LI C O N T R AN S I S T O
H1246
POWER SUPPLIESRELAY DRIVERS
LAMP DRIVERSELECTRICAL EQUIPMENT
ABSOLUTE MAXIMUM RATINGSTa=25℃)
Tstg——Storage Temperature………………………… -55~150
Tj——Junction Temperature…………………………………150
PC——Collector Dissipation…………………………………750mW
VCBO——Collector-Base Voltage………………………………30V
VCEO——Collector-Emitter Voltage……………………………25V
VEBO——Emitter-Base Voltage………………………………6V
IC——Collector Current……………………………………2A
TO-92
1EmitterE
2CollectorC
3BaseB
ELECTRICAL CHARACTERISTICSTa=25℃)
Symbol
Characteristics
BVCBO Collector-Base Breakdown Voltage
BVCEO Collector-Emitter Breakdown Voltage
BVEBO Emitter-Base Breakdown Voltage
HFE(1) DC Current Gain
HFE(2)
VCE(sat) Collector- Emitter Saturation Voltage
VBE(sat) Base-Emitter Saturation Voltage
ICBO
Collector Cut-off Current
IEBO
Emitter Cut-off Current
fT Current Gain-Bandwidth Product
Cob Output Capacitance
* pulse
hFE Classification
Min Typ Max Unit
Test Conditions
30 V IC=10μA, IE=0
25 V IC=1mA, IB=0
6 V IE=10μAIC=0
100 560 VCE=2V, IC=100mA
65 130
VCE=2V, IC=1.5A *
0.18 0.4 V IC=1.5A, IB=75mA *
0.85 1.2 V IC=1.5A, IB=75mA *
100 nA VCB=20V, IE=0
100 nA VEB=4V, IC=0
150 MHz VCE=10V, IC=50mA
19 pF VCB=10V, IE=0f=1MHz
R
100—200
S
140—280
T
200—400
U
280—560

H1246 Datasheet
Shantou Huashan Electronic Devices Co.,Ltd.
H1246


Features Datasheet pdf Shantou Huashan Electronic Devices Co.,L td. NPN S I LI C O N T R AN S I S T O H1246 █ POWER SUPPLIESRELAY DRIVERS LAMP DRIVERSELECTRICAL EQUIPMENT █ AB SOLUTE MAXIMUM RATINGS(Ta=25℃) Ts tg——Storage Temperature………… ……………… -55~150℃ Tj——J unction Temperature……………… ………………150℃ PC——Colle ctor Dissipation………………… ……………750mW VCBO——Collect or-Base Voltage…………………… …………30V VCEO——Collector-Emi tter Voltage……………………… ……25V VEBO——Emitter-Base Voltag e………………………………6V IC——Collector Current………… ………………………2A TO-92 1―EmitterE 2―CollectorC 3―BaseB █ ELECTRICAL CHARACTERISTICS(Ta=25 ) Symbol Characteristics BVCBO C ollector-Base Breakdown Voltage BVCEO Collector-Emitter Breakdown Voltage BV EBO Emitter-Base Breakdown Voltage HFE (1) DC Current Gain HFE(2) VCE(sat) Collector- Emitter Saturation Voltage VBE(sat) Base-Emitter Saturation Voltage ICBO Collector Cut-off Current IEBO Emitter Cut-off Current fT Current Gain-Bandwidth Product Cob Output Capacitance * pulse █ hFE Classification Min Typ Max Unit.
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