SILICON TRANSISTOR. H1020 Datasheet

H1020 Datasheet PDF, Equivalent


Part Number

H1020

Description

PNP SILICON TRANSISTOR

Manufacture

Huashan

Total Page 3 Pages
PDF Download
Download H1020 Datasheet PDF


H1020 Datasheet
Shantou Huashan Electronic Devices Co.,Ltd.
PNP SILICON TRANSISTOR
H1020
POWER AMPLIFIER APPLICATIONS
POWER SWITCHING APPLICATIONS
ABSOLUTE MAXIMUM RATINGSTa=25℃)
Tstg——Storage Temperature………………………… -55~150
Tj——Junction Temperature…………………………………150
PC——Collector Dissipation…………………………………900mW
VCBO——Collector-Base Voltage………………………………-50V
VCEO——Collector-Emitter Voltage……………………………-50V
VEBO——Emitter-Base Voltage………………………………-5V
IC——Collector Current……………………………………-2mA
TO-92
1EmitterE
2CollectorC
3BaseB
ELECTRICAL CHARACTERISTICSTa=25℃)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
HFE(1)
HFE(2)
VCE(sat)
VBE(sat)
fT
Cob
tON
tSTG
tF
Characteristics
Min Typ Max Unit
Test Conditions
Collector-Base Breakdown Voltage
-50
V IC=-1mA, IE=0
Collector-Emitter Breakdown Voltage
-50
V IC=-10mA, IB=0
Emitter-Base Breakdown Voltage
-5
V IE=-1mAIC=0
Collector Cut-off Current
-100 nA VCB=-50V, IE=0
Emitter Cut-off Current
-100 nA VEB=-5V, IC=0
DC Current Gain
70 240 VCE=-2V, IC=-0.5A
40 VCE=-2V, IC=-1.5A
Collector- Emitter Saturation Voltage
-0.5 V IC=-1A, IB=-0.05A
Base-Emitter Saturation Voltage
-1.2 V IC=-1A, IB=-0.05A
Current Gain-Bandwidth Product
Output Capacitance
100 MHz VCE=-2V, IC=-0.5A
40 pF VCB=-10V, IE=0f=1MHz
Turn-on Time
0.1 μS
Storage Time
1.0 μS
Fall Time
0.1 μS
hFE Classification
O
70—140
Y
120—240

H1020 Datasheet
Shantou Huashan Electronic Devices Co.,Ltd.
H1020


Features Datasheet pdf Shantou Huashan Electronic Devices Co.,L td. PNP SILICON TRANSISTOR H1020 █ POWER AMPLIFIER APPLICATIONS POWER SWIT CHING APPLICATIONS █ ABSOLUTE MAXIMUM RATINGS(Ta=25℃) Tstg——Storag e Temperature…………………… … -55~150℃ Tj——Junction Temper ature…………………………… …150℃ PC——Collector Dissipati on……………………………… 900mW VCBO——Collector-Base Voltag e………………………………-5 0V VCEO——Collector-Emitter Voltage …………………………-50V VE BO——Emitter-Base Voltage……… ……………………-5V IC——Co llector Current…………………… ………………-2mA TO-92 1―Emitt erE 2―CollectorC 3―BaseB █ ELECT RICAL CHARACTERISTICS(Ta=25℃) Sy mbol BVCBO BVCEO BVEBO ICBO IEBO HFE(1) HFE(2) VCE(sat) VBE(sat) fT Cob tON tS TG tF Characteristics Min Typ Max Uni t Test Conditions Collector-Base Brea kdown Voltage -50 V IC=-1mA, IE=0 Collector-Emitter Breakdown Voltage -50 V IC=-10mA, IB=0 Emitter-Base Breakdown Voltage -5 V IE=-1mAIC=0 Collector Cut-off Current -100 nA VCB=-50V, IE=0 Emitter Cut-off Current -100 nA VEB=-5V, IC=0 DC Current Gain 70 240 VCE=-2V, IC=-0.5A .
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