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SILICON TRANSISTOR. H1020 Datasheet

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SILICON TRANSISTOR. H1020 Datasheet






H1020 TRANSISTOR. Datasheet pdf. Equivalent




H1020 TRANSISTOR. Datasheet pdf. Equivalent





Part

H1020

Description

PNP SILICON TRANSISTOR



Feature


Shantou Huashan Electronic Devices Co.,L td. PNP SILICON TRANSISTOR H1020 █ POWER AMPLIFIER APPLICATIONS POWER SWIT CHING APPLICATIONS █ ABSOLUTE MAXIMUM RATINGS(Ta=25℃) Tstg——Storag e Temperature -55~150℃ Tj——Juncti on Temperature150℃ PC——Collector Dissipation900mW VCBO——Collector-Ba se Voltage-50V VCEO——Collector-Emit ter Voltage-50V VEBO——Emitter-Base Voltage-5V IC——Co.
Manufacture

Huashan

Datasheet
Download H1020 Datasheet


Huashan H1020

H1020; llector Current-2mA TO-92 1―Emitter E 2―Collector,C 3―Base,B █ ELECTRICAL CHARACTERISTICS(Ta=25℃ Symbol BVCBO BVCEO BVEBO ICBO IEBO H FE(1) HFE(2) VCE(sat) VBE(sat) fT Cob t ON tSTG tF Characteristics Min Typ Ma x Unit Test Conditions Collector-Base Breakdown Voltage -50 V IC=-1mA, IE= 0 Collector-Emitter Breakdown Voltage -50 V IC=-10mA, IB=0 Emitter-Base B.


Huashan H1020

reakdown Voltage -5 V IE=-1mA,IC=0 Collector Cut-off Current -100 nA VCB= -50V, IE=0 Emitter Cut-off Current -1 00 nA VEB=-5V, IC=0 DC Current Gain 7 0 240 VCE=-2V, IC=-0.5A 40 VCE=-2V, IC =-1.5A Collector- Emitter Saturation V oltage -0.5 V IC=-1A, IB=-0.05A Base- Emitter Saturation Voltage -1.2 V IC=- 1A, IB=-0.05A Current Gain-Bandwidth P roduct Output Capaci.


Huashan H1020

tance 100 MHz VCE=-2V, IC=-0.5A 40 pF V CB=-10V, IE=0,f=1MHz Turn-on Time 0 .1 μS Storage Time 1.0 μS Fall Tim e 0.1 μS █ hFE Classification O 7 0—140 Y 120—240 Shantou Huashan E lectronic Devices Co.,Ltd. H1020 Shan tou Huashan Electronic Devices Co.,Ltd. H1020 .

Part

H1020

Description

PNP SILICON TRANSISTOR



Feature


Shantou Huashan Electronic Devices Co.,L td. PNP SILICON TRANSISTOR H1020 █ POWER AMPLIFIER APPLICATIONS POWER SWIT CHING APPLICATIONS █ ABSOLUTE MAXIMUM RATINGS(Ta=25℃) Tstg——Storag e Temperature -55~150℃ Tj——Juncti on Temperature150℃ PC——Collector Dissipation900mW VCBO——Collector-Ba se Voltage-50V VCEO——Collector-Emit ter Voltage-50V VEBO——Emitter-Base Voltage-5V IC——Co.
Manufacture

Huashan

Datasheet
Download H1020 Datasheet




 H1020
Shantou Huashan Electronic Devices Co.,Ltd.
PNP SILICON TRANSISTOR
H1020
POWER AMPLIFIER APPLICATIONS
POWER SWITCHING APPLICATIONS
ABSOLUTE MAXIMUM RATINGSTa=25℃)
Tstg——Storage Temperature………………………… -55~150
Tj——Junction Temperature…………………………………150
PC——Collector Dissipation…………………………………900mW
VCBO——Collector-Base Voltage………………………………-50V
VCEO——Collector-Emitter Voltage……………………………-50V
VEBO——Emitter-Base Voltage………………………………-5V
IC——Collector Current……………………………………-2mA
TO-92
1EmitterE
2CollectorC
3BaseB
ELECTRICAL CHARACTERISTICSTa=25℃)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
HFE(1)
HFE(2)
VCE(sat)
VBE(sat)
fT
Cob
tON
tSTG
tF
Characteristics
Min Typ Max Unit
Test Conditions
Collector-Base Breakdown Voltage
-50
V IC=-1mA, IE=0
Collector-Emitter Breakdown Voltage
-50
V IC=-10mA, IB=0
Emitter-Base Breakdown Voltage
-5
V IE=-1mAIC=0
Collector Cut-off Current
-100 nA VCB=-50V, IE=0
Emitter Cut-off Current
-100 nA VEB=-5V, IC=0
DC Current Gain
70 240 VCE=-2V, IC=-0.5A
40 VCE=-2V, IC=-1.5A
Collector- Emitter Saturation Voltage
-0.5 V IC=-1A, IB=-0.05A
Base-Emitter Saturation Voltage
-1.2 V IC=-1A, IB=-0.05A
Current Gain-Bandwidth Product
Output Capacitance
100 MHz VCE=-2V, IC=-0.5A
40 pF VCB=-10V, IE=0f=1MHz
Turn-on Time
0.1 μS
Storage Time
1.0 μS
Fall Time
0.1 μS
hFE Classification
O
70—140
Y
120—240




 H1020
Shantou Huashan Electronic Devices Co.,Ltd.
H1020




 H1020
Shantou Huashan Electronic Devices Co.,Ltd.
H1020



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