H1020

Shantou Huashan Electronic Devices Co.,Ltd. PNP SILICON TRANSISTOR H1020 █ POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） Tstg——Storage Temperature………………………… -55~150℃ Tj——Junction Temperature…………………………………150℃ PC——Collector Dissipation…………………………………900mW VCBO——Collector-Base Voltage………………………………-50V VCEO——Collector-Emitter Voltage……………………………-50V VEBO——Emitter-Base Voltage………………………………-5V IC——Collector Current……………………………………-2mA TO-92 1―Emitter，E 2―Collector，C 3―Base，B █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol BVCBO BVCEO BVEBO ICBO IEBO HFE(1) HFE(2) VCE(sat) VBE(sat) fT Cob tON tSTG tF Characteristics Min Typ Max Unit Test Conditions Collector-Base Breakdown Voltage -50 V IC=-1mA, IE=0 Collector-Emitter Breakdown Voltage -50 V IC=-10mA, IB=0 Emitter-Base Breakdown Voltage -5 V IE=-1mA，IC=0 Collector Cut-off Current -100 nA VCB=-50V, IE=0 Emitter Cut-off Current -100 nA VEB=-5V, IC=0 DC Current Gain 70 240 VCE=-2V, IC=-0.5A 40 VCE=-2V, IC=-1.5A Collector- Emitter Saturation Voltage -0.5 V IC=-1A, IB=-0.05A Base-Emitter Saturation Voltage -1.2 V IC=-1A, IB=-0.05A Current Gain-Bandwidth Product Output Capacitance 100 MHz VCE=-2V, IC=-0.5A 40 pF VCB=-10V, IE=0，f=1MHz Turn-on Time 0.1 μS Storage Time 1.0 μS Fall Time 0.1 μS █ hFE Classification O 70—140 Y 120—240 Shantou Huashan Electronic Devices Co.,Ltd. H1020 Shantou Huashan Electronic Devices Co.,Ltd. H1020 ...