SILICON TRANSISTOR. H1420 Datasheet

H1420 Datasheet PDF, Equivalent


Part Number

H1420

Description

NPN SILICON TRANSISTOR

Manufacture

Huashan

Total Page 1 Pages
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H1420 Datasheet
Shantou Huashan Electronic Devices Co.,Ltd.
NPN SILICON TRANSISTOR
H1420
GENERAL PURPOSE AMPLIFIER AND LOW NOISE
AMPLIFIER APPLICATIONS
ABSOLUTE MAXIMUM RATINGSTa=25℃)
Tstg——Storage Temperature………………………… -55~150
Tj——Junction Temperature…………………………………150
PC——Collector Dissipation…………………………………625mW
VCBO——Collector-Base Voltage………………………………60V
VCEO——Collector-Emitter Voltage……………………………60V
VEBO——Emitter-Base Voltage………………………………7V
ICIC——ColCleocltolercCtourrreCnutrrent………………………………………………………………300mA200mA
IB——Base Current……………………………………………200mA
TO-92
1EmitterE
2BaseB
3CollectorC
ELECTRICAL CHARACTERISTICSTa=25℃)
Symbol
Characteristics
Min Typ Max Unit
Test Conditions
BVCEO Collector-Emitter Breakdown Voltage
60
V IC=1mA, IB=0
ICBO Collector Cut-off Current
50 nA VCB=40V, IE=0
IEBO Emitter Cut-off Current
100 nA VEB=6V, IC=0
HFE DC Current Gain
70 700 VCE=5V, IC=2mA
VCE(sat) Collector- Emitter Saturation Voltage
0.22 V IC=50mA, IB=10mA
VBE Base-Emitter Voltage
1.0 V VCE=5V, IC=2mA
fT Current Gain-Bandwidth Product
150 400
MHz VCE=5V, IC=10mA
Cob Output Capacitance
3.5 pF VCB=10V, IE=0f=1MHz


Features Datasheet pdf Shantou Huashan Electronic Devices Co.,L td. NPN SILICON TRANSISTOR H1420 █ GENERAL PURPOSE AMPLIFIER AND LOW NOISE AMPLIFIER APPLICATIONS █ ABSOLUTE MA XIMUM RATINGS(Ta=25℃) Tstg——S torage Temperature………………… ……… -55~150℃ Tj——Junction T emperature……………………… ………150℃ PC——Collector Diss ipation………………………… ……625mW VCBO——Collector-Base V oltage…………………………… …60V VCEO——Collector-Emitter Volt age……………………………60V VEBO——Emitter-Base Voltage…… ………………………7V IC—IC —C—olCleocltolercCtourrreCnut…r re…nt………………………… ……………………………… 30…0m…A200mA IB——Base Current ……………………………… ………200mA TO-92 1―EmitterE 2 BaseB 3―CollectorC █ ELECTRICAL CHARACTERISTICS(Ta=25℃) Symbol Characteristics Min Typ Max Unit Test Conditions BVCEO Collector-Emitter Breakdown Voltage 60 V IC=1mA, IB=0 ICBO Collector Cut-off Current 50 nA VCB=40V, IE=0 IEBO Emitter Cut-off Current 100 nA VEB=6V, IC=0 HFE DC Current Gain 70 700 VCE=5V, IC=2mA VCE(sat) Collector- Emitter Saturation Voltage 0.22 V IC=50mA, IB=10mA VBE Base-Emitter Voltag.
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