H1420

Shantou Huashan Electronic Devices Co.,Ltd. NPN SILICON TRANSISTOR H1420 █ GENERAL PURPOSE AMPLIFIER AND LOW NOISE AMPLIFIER APPLICATIONS █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） Tstg——Storage Temperature………………………… -55~150℃ Tj——Junction Temperature…………………………………150℃ PC——Collector Dissipation…………………………………625mW VCBO——Collector-Base Voltage………………………………60V VCEO——Collector-Emitter Voltage……………………………60V VEBO——Emitter-Base Voltage………………………………7V IC—IC——C—olCleocltolercCtourrreCnut…rre…nt………………………………………………………………30…0m…A200mA IB——Base Current……………………………………………200mA TO-92 1―Emitter，E 2―Base，B 3―Collector，C █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics Min Typ Max Unit Test Conditions BVCEO Collector-Emitter Breakdown Voltage 60 V IC=1mA, IB=0 ICBO Collector Cut-off Current 50 nA VCB=40V, IE=0 IEBO Emitter Cut-off Current 100 nA VEB=6V, IC=0 HFE DC Current Gain 70 700 VCE=5V, IC=2mA VCE(sat) Collector- Emitter Saturation Voltage 0.22 V IC=50mA, IB=10mA VBE Base-Emitter Voltage 1.0 V VCE=5V, IC=2mA fT Current Gain-Bandwidth Product 150 400 MHz VCE=5V, IC=10mA Cob Output Capacitance 3.5 pF VCB=10V, IE=0，f=1MHz ...