H2682

Shantou Huashan Electronic Devices Co.,Ltd. NPN SILICON TRANSISTOR H2682 █ APPLICATIONS . Audio Power Amplifie. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） Tstg——Storage Temperature………………………… -55~150℃ Tj——Junction Temperature……………………………… 150℃ PC——Collector Dissipation（Tc=25℃）…………………… 8W PC——Collector Dissipation（TA=25℃）…………………… 1.2W VCBO——Collector-Base Voltage………………………… 180V VCEO——Collector-Emitter Voltage……………………… 180V VEBO——Emitter-Base Voltage……………………………… 5V IC——Collector Current……………………………………100mA TO-126ML 1―Emitter，E 2―Collector，C 3―Base，B █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics Min Typ Max Unit Test Conditions BVCBO Collector-Base Breakdown Voltage 180 V IC=100μA, IE=0 BVCEO Collector-Emitter Breakdown Voltage 180 V IC=1mA, IB=0 BVEBO Emitter-Base Breakdown Voltage 5 V IE=10μA，IC=0 ICBO Collector Cut-off Current 1 μA VCB=180V, IE=0 IEBO Emitter Cut-off Current 1 μA VEB=3V, IC=0 HFE（1） DC Current Gain 90 190 VCE=5V, IC=1mA HFE（2） DC Current Gain 100 320 VCE=5V, IC=10mA VCE(sat) Collector- Emitter Saturation Voltage 0.12 0.5 V IC=50mA, IB=5mA VBE(sat) Base-Emitter Saturation Voltage 0.8 1.5 V IC=50mA, IB=5mA ft Current Gain-Bandwidth Product 200 MHz VCE=10V, IC=20mA, Cob Output Capacitance 3.2 5.0 pF VCB=10V, IE=0,f=1MHz █ hFE Classification O 100—200 Y 160—320 ...