SILICON TRANSISTOR. H1423 Datasheet

H1423 Datasheet PDF, Equivalent


Part Number

H1423

Description

PNP SILICON TRANSISTOR

Manufacture

Huashan

Total Page 1 Pages
PDF Download
Download H1423 Datasheet PDF


H1423 Datasheet
Shantou Huashan Electronic Devices Co.,Ltd.
PNP SILICON TRANSISTOR
H1423
GENERAL PURPOSE AMPLIFIER AND LOW NOISE
AMPLIFIER APPLICATIONS
ABSOLUTE MAXIMUM RATINGSTa=25℃)
Tstg——Storage Temperature………………………… -55~150
Tj——Junction Temperature…………………………………150
PC——Collector Dissipation…………………………………625mW
VCBO——Collector-Base Voltage………………………………-40V
VCEO——Collector-Emitter Voltage……………………………-40V
VEBO——Emitter-Base Voltage………………………………-7V
ICIC——ColCleocltloercCtourrreCnutrrent………………………………………………………………300mA-200mA
IB——Base Current……………………………………………-200mA
TO-92
1EmitterE
2BaseB
3CollectorC
ELECTRICAL CHARACTERISTICSTa=25℃)
Symbol
BVCEO
ICBO
IEBO
HFE
VCE(sat)
VBE
fT
Cob
Characteristics
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector- Emitter Saturation Voltage
Base-Emitter Voltage
Current Gain-Bandwidth Product
Output Capacitance
Min Typ Max Unit
Test Conditions
-40 V IC=-1mA, IB=0
-50 nA VCB=-30V, IE=0
-100 nA VEB=-6V, IC=0
70 400 VCE=-5V, IC=-2mA
-0.22 V IC=-50mA, IB=-10mA
-0.65
V VCE=-5V, IC=-2mA
150 300
MHz VCE=-5V, IC=-10mA
4.5 pF VCB=-10V, IE=0f=1MHz


Features Datasheet pdf Shantou Huashan Electronic Devices Co.,L td. PNP SILICON TRANSISTOR H1423 █ GENERAL PURPOSE AMPLIFIER AND LOW NOISE AMPLIFIER APPLICATIONS █ ABSOLUTE MA XIMUM RATINGS(Ta=25℃) Tstg——S torage Temperature………………… ……… -55~150℃ Tj——Junction T emperature……………………… ………150℃ PC——Collector Diss ipation………………………… ……625mW VCBO——Collector-Base V oltage…………………………… …-40V VCEO——Collector-Emitter Vol tage……………………………-4 0V VEBO——Emitter-Base Voltage…… …………………………-7V IC— IC——C—olCleocltloercCtourrreCnut rre…nt……………………… ……………………………… …3…00…mA-200mA IB——Base Curr ent……………………………… ……………-200mA TO-92 1―Emitte rE 2―BaseB 3―CollectorC █ ELECTR ICAL CHARACTERISTICS(Ta=25℃) Sym bol BVCEO ICBO IEBO HFE VCE(sat) VBE fT Cob Characteristics Collector-Emitter Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector- Emitter Saturation Voltage Base-Emitter Voltage Current Gain-Bandwidth Product Output Capacitance Min Typ Max Unit Test Conditions -40 V IC=-1mA, IB=0 -50 nA VCB=-30V, IE=0 -100 nA.
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