Encapsulated Transistor. B1274 Datasheet

B1274 Datasheet PDF, Equivalent


Part Number

B1274

Description

PNP Plastic Encapsulated Transistor

Manufacture

SeCoS

Total Page 1 Pages
PDF Download
Download B1274 Datasheet PDF


B1274 Datasheet
Elektronische Bauelemente
2SB1274
-3A , -60V
PNP Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
General Purpose Switching and Amplification.
Wide ASO (Adoption of MBIT Process)
Low Saturation Voltage.
TO-220J
Collector


Base

Emitter
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Rating
Collector to Base Voltage
VCBO
-60
Collector to Emitter Voltage
VCEO
-60
Emitter to Base Voltage
VEBO
-6
Collector Current - Continuous
IC -3
Collector Power Dissipation
PC 2
Junction, Storage Temperature
TJ, TSTG
150, -55~150
Unit
V
V
V
A
W
°C
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol Min Typ Max Unit
Test condition
Collector to Base Breakdown Voltage
V(BR)CBO
-60
-
-
V IC= -1mA, IE=0
Collector to Emitter Breakdown Voltage V(BR)CEO
-60
-
-
V IC= -5mA, IB=0
Emitter to Base Breakdown Voltage
V(BR)EBO
-6
-
-
V IE= -1mA, IC=0
Collector Cut-Off Current
ICBO - - -0.1 μA VCB= -40V, IE=0
Emitter Cut-Off Current
IEBO - - -0.1 μA VEB= -4V, IC=0
DC Current Gain
100 - 200
hFE 20 - -
VCE= -5V, IC= -500mA
VCE= -5V, IC= -3A
Collector to Emitter Saturation Voltage
VCE(sat)
-
- -1 V IC= -2A, IB= -200mA
Base to Emitter Saturation Voltage
VBE(sat)
-
- -1 V VCE= -5V, IC= -500mA
Transition Frequency
fT - 100 - MHz VCE= -5V, IC= -500mA
Collector output capacitance
Cob - 60 - pF VCB= -10V, IE=0, f=1MHz
http://www.SeCoSGmbH.com/
25-Jun-2013 Rev. B
Any changes of specification will not be informed individually.
Page 1 of 1


Features Datasheet pdf Elektronische Bauelemente 2SB1274 -3A , -60V PNP Plastic Encapsulated Transist or RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES  General Purpose Switching and Amplification.  Wide ASO (Adopt ion of MBIT Process)  Low Saturation Voltage. TO-220J Collector   Base  Emitter ABSOLUTE MA XIMUM RATINGS (TA=25°C unless otherwis e specified) Parameter Symbol Rating Collector to Base Voltage VCBO -60 Collector to Emitter Voltage VCEO -6 0 Emitter to Base Voltage VEBO -6 C ollector Current - Continuous IC -3 C ollector Power Dissipation PC 2 Junct ion, Storage Temperature TJ, TSTG 150 , -55~150 Unit V V V A W °C ELECTRIC AL CHARACTERISTICS (TA=25°C unless oth erwise specified) Parameter Symbol Mi n Typ Max Unit Test condition Collect or to Base Breakdown Voltage V(BR)CBO -60 - - V IC= -1mA, IE=0 Collector to Emitter Breakdown Voltage V(BR)CEO -60 - - V IC= -5mA, IB=0 Emitter to Base Breakdown Voltage V(BR)EBO -6 - - V I.
Keywords B1274, datasheet, pdf, SeCoS, PNP, Plastic, Encapsulated, Transistor, 1274, 274, 74, B127, B12, B1, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)