DB4 DIACS Datasheet

DB4 Datasheet PDF, Equivalent


Part Number

DB4

Description

SILICON BI-DIRECTIONAL DIACS

Manufacture

EIC

Total Page 1 Pages
PDF Download
Download DB4 Datasheet PDF


DB4
www.eicsemi.com
DB3, DB4
VBR : 32 - 40 Volts
FEATURES :
* VBR : 32 V and 40 V
* Low breakover current
* Pb / RoHS Free
MECHANICAL DATA :
* Case: DO-35 Glass Case
* Weight: approx. 0.11g
TH97/2478
TH09/2479
IATF 0113686
SGS TH07/1033
SILICON BI-DIRECTIONAL DIACS
DO - 35 Glass
(DO-204AH)
0.079(2.0 )max.
0.020 (0.52)max.
1.00 (25.4)
min.
0.150 (3.8)
max.
1.00 (25.4)
min.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (Ta = 25 °C)
RATING
Minimum Breakover Voltage
Typical Breakover Voltage
Maximum Breakover Voltage
Maximum Breakover Current
Maximum Breakover Voltage Symmetry
Minimum Dynamic Breakback Voltage
I = [IBR to IF = 10 mA]
Maximum Peak Current at Ta = 50 °C
(10 μs duration, 120 cycle repetition rate)
Maximum Peak output Voltage at Ta = 50 °C **
Thermal Impedance Junction to Ambient
Operating Junction Temperature Range
Storage Temperature Range
SYMBOL
VBR1 and VBR2 (Min.)
VBR1 and VBR2 (Typ.)
VBR1 and VBR2 (Max.)
I(BR)1 and I(BR)2
[V(BR)1] - [V(BR)2]
| ΔV ± |
IP
eP
RӨJA
TJ
TSTG
DB3
28
32
36
200
3.8
5.0
DB4
35
40
45
±2
±3
60
- 40 to + 100
- 40 to + 150
**CIRCUIT FOR PEAK OUTPUT VOLTAGE TEST
UNIT
V
V
V
μA
V
V
A
V
°C/W
°C
°C
Page 1 of 1
Rev. 03: December 7, 2006


Features www.eicsemi.com DB3, DB4 VBR : 32 - 40 V olts FEATURES : * VBR : 32 V and 40 V * Low breakover current * Pb / RoHS Free MECHANICAL DATA : * Case: DO-35 Glass Case * Weight: approx. 0.11g TH97/2478 TH09/2479 IATF 0113686 SGS TH07/1033 SILICON BI-DIRECTIONAL DIACS DO - 35 Glass (DO-204AH) 0.079(2.0 )max. 0.020 (0.52)max. 1.00 (25.4) min. 0.150 (3. 8) max. 1.00 (25.4) min. Dimensions in inches and ( millimeters ) MAXIMUM RA TINGS AND ELECTRICAL CHARACTERISTICS (T a = 25 °C) RATING Minimum Breakover V oltage Typical Breakover Voltage Maximu m Breakover Voltage Maximum Breakover C urrent Maximum Breakover Voltage Symmet ry Minimum Dynamic Breakback Voltage I = [IBR to IF = 10 mA] Maximum Peak C urrent at Ta = 50 °C (10 μs duration, 120 cycle repetition rate) Maximum Pea k output Voltage at Ta = 50 °C ** Ther mal Impedance Junction to Ambient Opera ting Junction Temperature Range Storage Temperature Range SYMBOL VBR1 and VBR 2 (Min.) VBR1 and VBR2 (Typ.) VBR1 and VBR2 (Max.) I(BR)1 and I(BR)2 .
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