CSD19537Q3 MOSFET Datasheet

CSD19537Q3 Datasheet PDF, Equivalent


Part Number

CSD19537Q3

Description

100-V N-Channel Power MOSFET

Manufacture

etcTI

Total Page 13 Pages
PDF Download
Download CSD19537Q3 Datasheet PDF


CSD19537Q3
Product
Folder
Sample &
Buy
Technical
Documents
Tools &
Software
Support &
Community
CSD19537Q3
SLPS549A – AUGUST 2015 – REVISED MAY 2016
CSD19537Q3 100-V N-Channel NexFET™ Power MOSFET
1 Features
1 Ultra-Low Qg and Qgd
• Low Thermal Resistance
• Avalanche Rated
• Lead Free Terminal Plating
• RoHS Compliant
• Halogen Free
• SON 3.3-mm × 3.3-mm Plastic Package
Product Summary
TA = 25°C
VDS Drain-to-Source Voltage
Qg Gate Charge Total (10 V)
Qgd Gate Charge Gate-to-Drain
RDS(on) Drain-to-Source On-Resistance
VGS(th) Threshold Voltage
TYPICAL VALUE
100
16
2.9
VGS = 6 V
VGS = 10 V
3
13.8
12.1
UNIT
V
nC
nC
m
m
V
2 Applications
• Primary Side Isolated Converters
• Motor Control
3 Description
This 100-V, 12.1-mΩ, SON 3.3-mm × 3.3-mm
NexFET™ power MOSFET is designed to minimize
losses in power conversion applications.
Top View
S1
8D
S2
7D
S3
6D
G4
D
5D
P0095-01
.
.
.
DEVICE
CSD19537Q3
CSD19537Q3T
.
Ordering Information(1)
MEDIA
QTY
PACKAGE
SHIP
13-Inch Reel 2500 SON 3.3- x 3.3-mm Tape and
13-Inch Reel 250 Plastic Package
Reel
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Absolute Maximum Ratings
TA = 25°C
VDS Drain-to-Source Voltage
VGS Gate-to-Source Voltage
Continuous Drain Current (Package
Limited)
VALUE
100
±20
50
UNIT
V
V
A
ID Continuous Drain Current (Silicon Limited),
TC = 25°C
Continuous Drain Current(1)
53
9.7
IDM Pulsed Drain Current(2)
Power Dissipation(1)
PD Power Dissipation, TC = 25°C
219
2.8
83
TJ, Operating Junction Temperature,
Tstg Storage Temperature
–55 to 150
EAS
Avalanche Energy, Single Pulse
ID = 33 A, L = 0.1 mH, RG = 25
55
A
A
A
W
W
°C
mJ
(1) Typical RθJA = 45°C/W on a 1-in2, 2-oz Cu pad on a 0.06-in
thick FR4 PCB.
(2) Max RθJC = 1.5°C/W, pulse duration 100 μs, duty cycle
1%.
RDS(on) vs VGS
40
TC = 25°C, I D = 10 A
35 TC = 125°C, I D = 10 A
30
25
20
15
10
5
0
0 2 4 6 8 10 12 14 16 18 20
VGS - Gate-To-Source Voltage (V)
D007
1
Gate Charge
10
9
ID = 10 A
VDS = 50 V
8
7
6
5
4
3
2
1
0
0 2 4 6 8 10 12 14 16
Qg - Gate Charge (nC)
D004
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.

CSD19537Q3
CSD19537Q3
SLPS549A – AUGUST 2015 – REVISED MAY 2016
www.ti.com
Table of Contents
1 Features .................................................................. 1
2 Applications ........................................................... 1
3 Description ............................................................. 1
4 Revision History..................................................... 2
5 Specifications......................................................... 3
5.1 Electrical Characteristics........................................... 3
5.2 Thermal Information .................................................. 3
5.3 Typical MOSFET Characteristics.............................. 4
6 Device and Documentation Support.................... 7
6.1 Community Resources.............................................. 7
6.2 Trademarks ............................................................... 7
6.3 Electrostatic Discharge Caution ................................ 7
6.4 Glossary .................................................................... 7
7 Mechanical, Packaging, and Orderable
Information ............................................................. 8
7.1 Q3 Package Dimensions .......................................... 8
7.2 Recommended PCB Pattern..................................... 9
7.3 Recommended Stencil Opening ............................... 9
7.4 Q3 Tape and Reel Information................................ 10
4 Revision History
Changes from Original (August 2015) to Revision A
Page
• Corrected typo in X axis legend on Figure 11. ....................................................................................................................... 6
2 Submit Documentation Feedback
Copyright © 2015–2016, Texas Instruments Incorporated
Product Folder Links: CSD19537Q3


Features Product Folder Sample & Buy Technical Documents Tools & Software Support & Community CSD19537Q3 SLPS549A – AUGU ST 2015 – REVISED MAY 2016 CSD19537Q3 100-V N-Channel NexFET™ Power MOSFET 1 Features •1 Ultra-Low Qg and Qgd • Low Thermal Resistance • Avalanch e Rated • Lead Free Terminal Plating • RoHS Compliant • Halogen Free • SON 3.3-mm × 3.3-mm Plastic Package Product Summary TA = 25°C VDS Drain-t o-Source Voltage Qg Gate Charge Total ( 10 V) Qgd Gate Charge Gate-to-Drain RDS (on) Drain-to-Source On-Resistance VGS( th) Threshold Voltage TYPICAL VALUE 1 00 16 2.9 VGS = 6 V VGS = 10 V 3 13 .8 12.1 UNIT V nC nC mΩ mΩ V 2 Ap plications • Primary Side Isolated Co nverters • Motor Control 3 Descriptio n This 100-V, 12.1-mΩ, SON 3.3-mm × 3 .3-mm NexFET™ power MOSFET is designe d to minimize losses in power conversio n applications. Top View S1 8D S2 7 D S3 6D G4 D 5D P0095-01 . . . DEVICE CSD19537Q3 CSD19537Q3T . Ordering Information(1) MEDIA QTY PACKAGE SHIP 13-Inch Re.
Keywords CSD19537Q3, datasheet, pdf, etcTI, 100-V, N-Channel, Power, MOSFET, SD19537Q3, D19537Q3, 19537Q3, CSD19537Q, CSD19537, CSD1953, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)