VS-CPV364M4KPbF Module Datasheet

VS-CPV364M4KPbF Datasheet PDF, Equivalent


Part Number

VS-CPV364M4KPbF

Description

IGBT SIP Module

Manufacture

Vishay

Total Page 11 Pages
PDF Download
Download VS-CPV364M4KPbF Datasheet PDF


VS-CPV364M4KPbF
www.vishay.com
VS-CPV364M4KPbF
Vishay Semiconductors
IGBT SIP Module
(Short Circuit Rated Ultrafast IGBT)
IMS-2
PRIMARY CHARACTERISTICS
OUTPUT CURRENT IN A TYPICAL 20 kHz MOTOR DRIVE
VCES
IRMS per phase (3.1 kW total)
with TC = 90 °C
TJ
Supply voltage
Power factor
600 V
11 ARMS
125 °C
360 VDC
0.8
Modulation depth (see fig. 1)
115 %
VCE(on) (typical)
at IC = 13 A, 25 °C
Speed
1.8 V
8 kHz to 30 kHz
Package
SIP
Circuit configuration
Three phase inverter
FEATURES
• Short circuit rated ultrafast: optimized for high
speed, and short circuit rated to 10 μs at 125 °C,
VGE = 15 V
• Fully isolated printed circuit board mount
package
• Switching-loss rating includes all “tail” losses
• HEXFRED® soft ultrafast diodes
• UL approved file E78996
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The IGBT technology is the key to Vishay’s Semiconductors
advanced line of IMS (Insulated Metal Substrate) power
modules. These modules are more efficient than
comparable bipolar transistor modules, while at the same
time having the simpler gate-drive requirements of the
familiar power MOSFET. This superior technology has now
been coupled to a state of the art materials system that
maximizes power throughput with low thermal resistance.
This package is highly suited to motor drive applications and
where space is at a premium.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector to emitter voltage
SYMBOL
VCES
Continuous collector current
IC
Pulsed collector current
Clamped inductive load current
Short circuit withstand time
Gate to emitter voltage
Isolation voltage
ICM (1)
ILM (2)
tSC
VGE
VISOL
Maximum power dissipation, each IGBT
PD
Operating junction and storage temperature range TJ, TStg
Soldering temperature
TEST CONDITIONS
TC = 25 °C
TC = 100 °C
TC = 100 °C
t = 1 min, any terminal to case
TC = 25 °C
TC = 100 °C
For 10 s, (0.063" (1.6 mm) from case)
Mounting torque
6-32 or M3 screw
Notes
(1) Repetitive rating; VGE = 20 V, pulse width limited by maximum junction temperature (see fig. 20)
(2) VCC = 80 % (VCES), VGE = 20 V, L = 10 μH, RG = 10 (see fig. 19)
MAX.
600
24
13
48
48
9.3
± 20
2500
63
25
-55 to +150
300
5 to 7
(0.55 to 0.8)
UNITS
V
A
μs
V
VRMS
W
°C
lbf in
(N m)
Revision: 25-Oct-17
1 Document Number: 94488
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

VS-CPV364M4KPbF
www.vishay.com
VS-CPV364M4KPbF
Vishay Semiconductors
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Junction to case, each IGBT, one IGBT in conduction
Junction to case, each diode, one diode in conduction
Case to sink, flat, greased surface
RthJC (IGBT)
RthJC (DIODE)
RthCS (MODULE)
Weight of module
TYP.
-
-
0.10
20
0.7
MAX.
2.2
3.7
-
-
-
UNITS
°C/W
g
oz.
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter breakdown voltage
Temperature coeff. of breakdown
voltage
V(BR)CES (1)
V(BR)CESTJ
VGE = 0 V, IC = 250 μA
VGE = 0 V, IC = 1.0 mA
Collector to emitter saturation voltage
Gate threshold voltage
Temperature coeff. of threshold voltage
Forward transconductance
Zero gate voltage collector current
Diode forward voltage drop
Gate to emitter leakage current
VCE(on)
VGE(th)
VGE(th)/TJ
gfe (2)
ICES
VFM
IGES
IC = 13 A
IC = 24 A
IC = 13 A, TJ = 150 °C
VGE = 15 V
See fig. 2, 5
VCE = VGE, IC = 250 μA
VCE = 100 V, IC = 10 A
VGE = 0 V, VCE = 600 V
VGE = 0 V, VCE = 600 V, TJ = 150 °C
IC = 15 A
IC = 15 A, TJ = 150 °C
See fig. 13
VGE = ± 20 V
Notes
(1) Pulse width 80 μs, duty factor 0.1 %
(2) Pulse width 5.0 μs; single shot
MIN.
600
-
-
-
-
3.0
-
11
-
-
-
-
-
TYP.
-
0.63
1.80
1.80
1.56
-
-13
18
-
-
1.3
1.2
-
MAX. UNITS
-V
- V/°C
2.3
-
1.73
6.0
-
-
250
3500
1.7
1.6
± 100
V
mV/°C
S
μA
V
nA
Revision: 25-Oct-17
2 Document Number: 94488
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Features www.vishay.com VS-CPV364M4KPbF Vishay S emiconductors IGBT SIP Module (Short C ircuit Rated Ultrafast IGBT) IMS-2 PR IMARY CHARACTERISTICS OUTPUT CURRENT I N A TYPICAL 20 kHz MOTOR DRIVE VCES IR MS per phase (3.1 kW total) with TC = 9 0 °C TJ Supply voltage Power factor 6 00 V 11 ARMS 125 °C 360 VDC 0.8 Modul ation depth (see fig. 1) 115 % VCE(on ) (typical) at IC = 13 A, 25 °C Speed 1.8 V 8 kHz to 30 kHz Package SIP C ircuit configuration Three phase inver ter FEATURES • Short circuit rated u ltrafast: optimized for high speed, and short circuit rated to 10 μs at 125 C, VGE = 15 V • Fully isolated print ed circuit board mount package • Swit ching-loss rating includes all “tail losses • HEXFRED® soft ultrafast diodes • UL approved file E78996 • Designed and qualified for industrial l evel • Material categorization: for d efinitions of compliance please see www .vishay.com/doc?99912 DESCRIPTION The I GBT technology is the key to Vishay’s Semiconductors advanced line of IMS (Insulated Me.
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