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2N3002

Digitron Semiconductors

SILICON REVERSE BLOCKING THYRISTORS

2N3001-2N3004 High-reliability discrete products and engineering services since 1977 SILICON REVERSE BLOCKING THYRISTO...


Digitron Semiconductors

2N3002

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2N3001-2N3004 High-reliability discrete products and engineering services since 1977 SILICON REVERSE BLOCKING THYRISTORS FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Ratings Symbol 2N3001 2N3002 2N3003 2N3004 Unit Static Off-State Voltage (1) VD 30 60 100 200 V Repetitive Peak Off-State Voltage (1) VDRM 30 60 100 200 V Static Reverse Voltage (2) VR 30 60 100 200 V Repetitive Peak Reverse Voltage(2) VRRM 30 60 100 200 V Continuous or RMS On-State Current at (or below) 55°C Free Air Temperature(3) IT(RMS) 350 mA Average On-State Current (180° Conduction Angle) at (or below) 55°C Free Air Temperature (4) IT(AV) 250 mA Surge On-State Current (5) ITSM 6 A Peak Reverse Gate Voltage VRGM 8V Peak Forward Gate Current (PW ≤ 8ms) IFGM 250 mA Average Gate Power Dissipation PD 100 mW Operating Free Air Temperature Range TJ -65 to +150 °C Storage Temperature Range Tstg -65 to +175 °C Lead Temperature 1/16” from Case for 10s TL 300 °C Note 1: These values apply when the gate-cathode resistance RGK ≤ 1kΩ. Note 2: These values apply when the gate-cathode resistance RGK ≤ ∞. Note 3: This value applies for continuous dc or single-phase, 60Hz, half-sine wave operation with resistive load. Above 55°C, derate according to Figure 1. Note 4: This value may be applied con...




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