SILICON REVERSE BLOCKING THYRISTORS
2N3001-2N3004
High-reliability discrete products and engineering services since 1977
SILICON REVERSE BLOCKING THYRISTO...
Description
2N3001-2N3004
High-reliability discrete products and engineering services since 1977
SILICON REVERSE BLOCKING THYRISTORS
FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Ratings
Symbol
2N3001 2N3002 2N3003 2N3004
Unit
Static Off-State Voltage (1)
VD 30 60 100 200 V
Repetitive Peak Off-State Voltage (1)
VDRM
30 60 100 200 V
Static Reverse Voltage (2)
VR 30 60 100 200 V
Repetitive Peak Reverse Voltage(2)
VRRM 30 60 100 200 V
Continuous or RMS On-State Current at (or below) 55°C Free Air Temperature(3)
IT(RMS)
350 mA
Average On-State Current (180° Conduction Angle) at (or below) 55°C Free Air Temperature (4)
IT(AV)
250 mA
Surge On-State Current (5)
ITSM 6 A
Peak Reverse Gate Voltage
VRGM
8V
Peak Forward Gate Current (PW ≤ 8ms)
IFGM
250 mA
Average Gate Power Dissipation
PD
100 mW
Operating Free Air Temperature Range
TJ
-65 to +150
°C
Storage Temperature Range
Tstg
-65 to +175
°C
Lead Temperature 1/16” from Case for 10s
TL
300 °C
Note 1: These values apply when the gate-cathode resistance RGK ≤ 1kΩ. Note 2: These values apply when the gate-cathode resistance RGK ≤ ∞. Note 3: This value applies for continuous dc or single-phase, 60Hz, half-sine wave operation with resistive load. Above 55°C, derate according to Figure 1.
Note 4: This value may be applied con...
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