2N3004 THYRISTORS Datasheet

2N3004 Datasheet PDF, Equivalent


Part Number

2N3004

Description

SILICON REVERSE BLOCKING THYRISTORS

Manufacture

Digitron Semiconductors

Total Page 6 Pages
Datasheet
Download 2N3004 Datasheet


2N3004
2N3001-2N3004
High-reliability discrete products
and engineering services since 1977
SILICON REVERSE BLOCKING THYRISTORS
FEATURES
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Ratings
Symbol
2N3001 2N3002 2N3003 2N3004
Unit
Static Off-State Voltage (1)
VD 30 60 100 200 V
Repetitive Peak Off-State Voltage (1)
VDRM
30 60 100 200 V
Static Reverse Voltage (2)
VR 30 60 100 200 V
Repetitive Peak Reverse Voltage(2)
VRRM 30 60 100 200 V
Continuous or RMS On-State Current at (or below)
55°C Free Air Temperature(3)
IT(RMS)
350 mA
Average On-State Current (180° Conduction Angle) at
(or below) 55°C Free Air Temperature (4)
IT(AV)
250 mA
Surge On-State Current (5)
ITSM 6 A
Peak Reverse Gate Voltage
VRGM
8V
Peak Forward Gate Current (PW ≤ 8ms)
IFGM
250 mA
Average Gate Power Dissipation
PD
100 mW
Operating Free Air Temperature Range
TJ
-65 to +150
°C
Storage Temperature Range
Tstg
-65 to +175
°C
Lead Temperature 1/16” from Case for 10s
TL
300 °C
Note 1: These values apply when the gate-cathode resistance RGK ≤ 1kΩ.
Note 2: These values apply when the gate-cathode resistance RGK ≤ ∞.
Note 3: This value applies for continuous dc or single-phase, 60Hz, half-sine wave operation with resistive load. Above 55°C, derate according to Figure 1.
Note 4: This value may be applied continuously under single-phase, 60Hz, half-sine wave operation with resistive load. Above 55°C, derate according to Figure 1.
Note 5: This value applies for one 60 Hz half-sine wave when the device is operation at (or below) rated values of peak reverse voltage and on-state current. Surge
may be repeated after the device has returned to original thermal equilibrium.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Min
Typ
Max Unit
Static-Off-State Current
VD = Rated VD, RGK = 1kΩ
ID -
- 0.1 µA
VD = Rated VD, RGK = 1kΩ, TA = 150°C
- - 100
Static Reverse Current
VR = Rated VR, RGK = ∞
IR -
- 0.1 µA
VR = Rated VR, RGK = ∞, TA = 150°C
- - 100
Gate Current
VG = -5V, IA = 0
IG - - -5 µA
Gate Trigger Current
VAA = 5V, IA =
IGT -
5 20 µA
Gate Trigger Voltage
VAA = 5V, RL = 12Ω, tp(g) ≥ 10µs, TA = -65°C
VAA = 5V, RL = 12Ω, tp(g) ≥ 10µs
VGT
-
-
- 0.9
0.55 0.7
V
VAA = 5V, RL = 12Ω, tp(g) ≥ 10µs, TA = 150°C
0.2 -
-
Holding Current
RGK = 1kΩ, RL = 2k
IH - 1.2 3 mA
RGK = 1kΩ, RL = 2k, TA = -65°
--4
On-State Voltage(6)
IT = 350mA, RGK > 1k
VT -
- 1.2 V
Critical Rate of Rise of Off-State Voltage
VD = 1V
dv/dt
-
400
-
V/µs
Rev. 20180613

2N3004
2N3001-2N3004
High-reliability discrete products
and engineering services since 1977
SWITCHING CHARACTERISTICS (TJ = 25°C)
Parameter
Typical Gate Controlled Turn-On Time
VAA = 200V, RL = 2.2k, RG = 100, Vin = 3V
Typical Circuit-Commutate Turn-Off Time
VAA = 50V, RL = 140k
Symbol
tgt
tq
THERMAL CHARACTERISTICS
Parameter
Junction-to-Case Thermal Resistance
Junction-to-Free-Air Thermal Resistance
Symbol
RθJC
RθJA
MECHANICAL CHARACTERISTICS
Case:
TO-18
Marking:
Alpha-Numeric
Polarity:
See Pin Out
SILICON REVERSE BLOCKING THYRISTORS
2N3004
0.3
3.5
Value
75
275
Unit
µs
µs
Unit
°C/W
°C/W
Rev. 20180613


Features 2N3001-2N3004 High-reliability discrete products and engineering services sinc e 1977 SILICON REVERSE BLOCKING THYRIS TORS FEATURES • Available as “HR (high reliability) screened per MIL-P RF-19500, JANTX level. Add “HR” suf fix to base part number. • Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix . MAXIMUM RATINGS Ratings Symbol 2N 3001 2N3002 2N3003 2N3004 Unit Static Off-State Voltage (1) VD 30 60 100 20 0 V Repetitive Peak Off-State Voltage (1) VDRM 30 60 100 200 V Static Reve rse Voltage (2) VR 30 60 100 200 V Re petitive Peak Reverse Voltage(2) VRRM 30 60 100 200 V Continuous or RMS On-S tate Current at (or below) 55°C Free A ir Temperature(3) IT(RMS) 350 mA Ave rage On-State Current (180° Conduction Angle) at (or below) 55°C Free Air Te mperature (4) IT(AV) 250 mA Surge On -State Current (5) ITSM 6 A Peak Reve rse Gate Voltage VRGM 8V Peak Forwar d Gate Current (PW ≤ 8ms) IFGM 250 mA Average Gate Power Dissipation PD 100 m.
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