2N5949 JFETS Datasheet

2N5949 Datasheet PDF, Equivalent


Part Number

2N5949

Description

SILICON N-CHANNEL JFETS

Manufacture

Central Semiconductor

Total Page 4 Pages
Datasheet
Download 2N5949 Datasheet


2N5949
2N5949 2N5951
2N5952 2N5953
SILICON
N-CHANNEL JFETS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N5949 Series
devices are silicon N-Channel JFETs designed for
switching, RF amplifier and mixer applications where
low capacitance is desired.
MARKING: FULL PART NUMBER
TO-92-18R CASE
MAXIMUM RATINGS: (TA=25°C)
Gate-Source Voltage
Drain-Gate Voltage
Gate Current
Power Dissipation
Operating and Storage Junction Temperature
SYMBOL
VGS
VDG
IG
PD
TJ, Tstg
30
30
10
360
-65 to +150
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
2N5949
2N5951
SYMBOL TEST CONDITIONS
MIN MAX MIN MAX
IGSS
VGS=15V, VDS=0
- 1.0
- 1.0
IGSS
VGS=15V, VDS=0, TA=100°C - 200
- 200
IDSS
VDS=15V, VGS=0
12 18
7.0 13
BVGSS
IG=1.0μA
30 -
30 -
VGS
VDS=15V, ID=1.2mA
2.25 6.0
--
VGS
VDS=15V, ID=0.7mA
--
1.3 4.5
VGS
VDS=15V, ID=0.4mA
--
--
VGS
VDS=15V, ID=0.25mA
--
--
VGS(OFF) VDS=15V, ID=100nA
3.0 7.0 2.0 5.0
yfs
VDS=15V, VGS=0, f=1.0kHz 3.5 7.5
3.5 6.5
yos
VDS=15V, VGS=0, f=1.0kHz
- 75
- 75
Ciss
VDS=15V, VGS=0, f=1.0MHz
- 6.0
- 6.0
Crss
VDS=15V, VGS=0, f=1.0MHz
- 2.0
- 2.0
rds(on)
VGS=0, ID=0, f=1.0kHz
- 200
- 250
gis
VDS=15V, VGS=0, f=100MHz - 250
- 250
gfs
VDS=15V, VGS=0, f=100MHz 3.0 7.5
3.0 6.5
gos
VDS=15V, VGS=0, f=100MHz - 150
- 100
NF VDS=15V, VGS=0, f=100MHz,
RG=1.0kΩ
- 5.0
- 5.0
NF VDS=15V, VGS=0, f=1.0kHz,
RG=1.0MΩ
- 2.0
- 2.0
VN
VDS=15V, VGS=0, f=1.0kHz
- 100
- 100
2N5952
MIN MAX
- 1.0
- 200
4.0 8.0
30 -
--
--
0.75 3.0
--
1.3 3.5
2.0 6.5
- 50
- 6.0
- 2.0
- 300
- 250
1.0 6.5
- 75
- 5.0
- 2.0
- 100
UNITS
V
V
mA
mW
°C
2N5953
MIN MAX
- 1.0
- 200
2.5 5.0
30 -
--
--
--
0.5 2.5
0.8 3.0
2.0 6.5
- 50
- 6.0
- 2.0
- 375
- 250
1.0 6.5
- 50
UNITS
nA
nA
mA
V
V
V
V
V
V
mS
μS
pF
pF
Ω
μS
mS
μS
- 5.0
dB
- 2.0
dB
- 100 nV/ Hz
R1 (25-April 2018)

2N5949
2N5949 2N5951
2N5952 2N5953
SILICON
N-CHANNEL JFETS
TO-92-18R CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Gate
2) Source
3) Drain
MARKING:
FULL PART NUMBER
w w w. c e n t r a l s e m i . c o m
R1 (25-April 2018)


Features 2N5949 2N5951 2N5952 2N5953 SILICON N-CH ANNEL JFETS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEM ICONDUCTOR 2N5949 Series devices are si licon N-Channel JFETs designed for swit ching, RF amplifier and mixer applicati ons where low capacitance is desired. M ARKING: FULL PART NUMBER TO-92-18R CAS E MAXIMUM RATINGS: (TA=25°C) Gate-Sou rce Voltage Drain-Gate Voltage Gate Cur rent Power Dissipation Operating and St orage Junction Temperature SYMBOL VGS VDG IG PD TJ, Tstg 30 30 10 360 -65 to +150 ELECTRICAL CHARACTERISTICS: (TA= 25°C unless otherwise noted) 2N5949 2N5951 SYMBOL TEST CONDITIONS MIN MAX MIN MAX IGSS VGS=15V, VDS=0 - 1.0 - 1.0 IGSS VGS=15V, VDS=0, TA=100°C - 200 - 200 IDSS VDS=15V, VGS=0 12 18 7.0 13 BVGSS IG=1.0μA 30 - 30 - VGS VDS=15V, ID=1.2mA 2.25 6.0 -- VGS VDS=15V, ID=0.7mA -- 1.3 4.5 VGS VDS=15V, ID=0.4mA -- -- VGS VD S=15V, ID=0.25mA -- -- VGS(OFF) VDS= 15V, ID=100nA 3.0 7.0 2.0 5.0 yfs VDS=15V, VGS=0, f=1.0kHz 3.5 7.
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