SILICON N-CHANNEL JFETS
2N5949 2N5951 2N5952 2N5953
SILICON N-CHANNEL JFETS
w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMIC...
Description
2N5949 2N5951 2N5952 2N5953
SILICON N-CHANNEL JFETS
w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5949 Series devices are silicon N-Channel JFETs designed for switching, RF amplifier and mixer applications where low capacitance is desired.
MARKING: FULL PART NUMBER
TO-92-18R CASE
MAXIMUM RATINGS: (TA=25°C) Gate-Source Voltage
Drain-Gate Voltage
Gate Current
Power Dissipation
Operating and Storage Junction Temperature
SYMBOL VGS VDG IG PD
TJ, Tstg
30 30 10 360 -65 to +150
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
2N5949
2N5951
SYMBOL TEST CONDITIONS
MIN MAX MIN MAX
IGSS
VGS=15V, VDS=0
- 1.0
- 1.0
IGSS
VGS=15V, VDS=0, TA=100°C - 200
- 200
IDSS
VDS=15V, VGS=0
12 18
7.0 13
BVGSS
IG=1.0μA
30 -
30 -
VGS
VDS=15V, ID=1.2mA
2.25 6.0
--
VGS
VDS=15V, ID=0.7mA
--
1.3 4.5
VGS
VDS=15V, ID=0.4mA
--
--
VGS
VDS=15V, ID=0.25mA
--
--
VGS(OFF) VDS=15V, ID=100nA
3.0 7.0 2.0 5.0
yfs
VDS=15V, VGS=0, f=1.0kHz 3.5 7.5
3.5 6.5
yos
VDS=15V, VGS=0, f=1.0kHz
- 75
- 75
Ciss
VDS=15V, VGS=0, f=1.0MHz
- 6.0
- 6.0
Crss
VDS=15V, VGS=0, f=1.0MHz
- 2.0
- 2.0
rds(on)
VGS=0, ID=0, f=1.0kHz
- 200
- 250
gis
VDS=15V, VGS=0, f=100MHz - 250
- 250
gfs
VDS=15V, VGS=0, f=100MHz 3.0 7.5
3.0 6.5
gos
VDS=15V, VGS=0, f=100MHz - 150
- 100
NF VDS=15V, VGS=0, f=100MHz,
RG=1.0kΩ
- 5.0
- 5.0
NF VDS=15V, VGS=0, f=1.0kHz,
RG=1.0MΩ
- 2.0
- 2.0
VN
VDS=15V, VGS=0, f=1.0kHz
- 100
- 100
2N5952 MIN MAX
- 1...
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