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2N5951 Dataheets PDF



Part Number 2N5951
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description N-Channel RF Amplifier
Datasheet 2N5951 Datasheet2N5951 Datasheet (PDF)

2N5951 — N-Channel RF Amplifier September 2007 2N5951 N-Channel RF Amplifier • This device is designed primarily for electronic switching applications such as low on resistance analog switching. • Sourced from process 50. TO-92 1 1. Gate 2. Source 3. Drain Absolute Maximum Ratings* Ta=25°C unless otherwise noted Symbol VDG VGS IGF TJ, TSTG Parameter Drain-Gate Voltage Gate-Source Voltage Forward Gate Current Operating and Storage Junction Temperature Range * This ratings are limiting value.

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2N5951 — N-Channel RF Amplifier September 2007 2N5951 N-Channel RF Amplifier • This device is designed primarily for electronic switching applications such as low on resistance analog switching. • Sourced from process 50. TO-92 1 1. Gate 2. Source 3. Drain Absolute Maximum Ratings* Ta=25°C unless otherwise noted Symbol VDG VGS IGF TJ, TSTG Parameter Drain-Gate Voltage Gate-Source Voltage Forward Gate Current Operating and Storage Junction Temperature Range * This ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These rating are based on a maximum junction temperature of 150 degrees C. 2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Ta=25°C unless otherwise noted Symbol Parameter PD Total Device Dissipation Derate above 25°C RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Value 30 -30 10 -55 ~ 150 Max. 350 2.8 125 357 Units V V mA °C Units mW mW/°C °C/W °C/W © 2007 Fairchild Semiconductor Corporation 2N5951 Rev. 1.0.0 1 www.fairchildsemi.com 2N5951 — N-Channel RF Amplifier Electrical Characteristics* Ta=25°C unless otherwise noted Symbol Parameter Test Condition Min. Max. Units Off Characteristics V(BR)GSS IGSS Gate-Source Breakdown Voltage Gate Reverse Current VGS(off) VGS Gate-Source Cut-off Voltage Gate-Source Forward Voltage On Characteristics *IDSS RDS(on) Zero-Gate Voltage Drain Current * Drain-Source On Resistance Small Signal Characteristics goss Common- Source Output Conductance gos Output Conductance gis Input Conductance Ciss Input Capacitance Crss Reverse Transfer Capacitance en Equivalent Short-Circuit Input Noise Voltage NF Noise Figure * Pulse Test: Pulse Width ≤ 300μs, Duty Cycle = 2% IG = 1.0μA, VDS = 0 VGS = 15V, VDS = 0, T = 25°C T = 100°C VDS = 15V, ID = 100nA VDS = 15V, ID = 700μA VDS = 15V, VGS = 0 ID = 400μA, f = 1.0kHz VDS = 15V, VGS = 0V, f = 1.0kHz VDS = 15V, VGS = 0V, f = 100MHz VDS = 15V, VGS = 0V, f = 100MHz VDS = 15V, VGS = 0V, f = 1.0MHz VDS = 15V, VGS = 0V, f = 1.0MHz VDS = 15V, VGS = 0V, f = 1.0kHz VDS = 15V, VGS = 0V, RG = 1.0mΩ, f = 1.0kHz RG = 1.0kΩ, f = 100MHz -30 -1.0 -200 -2 -5 -1.3 -4.5 7 13 250 75 100 250 6 2 100 2 5 V nA V V mA Ω μ/Ω μ/Ω μ/Ω pF pF nV dB © 2007 Fairchild Semiconductor Corporation 2N5951 Rev. 1.0.0 2 www.fairchildsemi.com 2N5951 N-Channel RF Amplifier TRADEMARKS The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx® Build it Now™ CorePLUS™ CROSSVOLT™ Green FPS™ Green FPS™ e-Series™ GTO™ i-Lo™ Power247® POWEREDGE® Power-SPM™ PowerTrench® SuperSOT™-8 SyncFET™ The Power Franchise® CTL™ Current Transfer Logic™ EcoSPARK® Fairchild® Fairchild Semiconductor® IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ Programmable Active Droop™ QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ TinyPower™ FACT Quiet Series™ FACT® FAST® FastvCore™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR® ® SMART START™ SPM® STEALTH™ SuperFET™ TinyPWM™ TinyWire™ µSerDes™ UHC® FPS™ FRFET® PDP-SPM™ Power220® SuperSOT™-3 SuperSOT™-6 UniFET™ VCX™ Global Power ResourceSM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Advance Information Formative or I.


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