2N5952 Amplifier Datasheet

2N5952 Datasheet PDF, Equivalent


Part Number

2N5952

Description

N-Channel RF Amplifier

Manufacture

Fairchild Semiconductor

Total Page 4 Pages
Datasheet
Download 2N5952 Datasheet


2N5952
2N5952
N-Channel RF Ampifier
• This device is designed primarily for electronic switching applications
such as low on resistance analog switching.
• Sourced from process 50.
1 TO-92
Absolute Maximum Ratings * TC=25°C unless otherwise noted
1. Gate 2. Source 3. Drain
Symbol
Parameter
Value
Units
VDG Drain-Gate Voltage
30
VGS Gate-Source Voltage
-30
IGF Forward Gate Current
10
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 ~ +150
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
V
V
mA
°C
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Off Characteristics
V(BR)GSS Gate-Source Breakdown Voltage
IGSS
Gate Reverse Current
VGS(off) Gate-Source Cutoff Voltage
On Characteristics
VDS = 0, IG = -1.0µA
VGS = -15V, VDS = 0
VDS = 15V, ID = 100nA
IDSS
Zero-Gate Voltage Drain Current *
Small Signal Characteristics
VDS = 15V, VGS = 0
gfs Forward Transfer Conductance
gos Output Conductance
Ciss Input Capacitance
Crss Reverse Transfer Capacitance
NF Noise Figure
* Pulse Test: Pulse Width 300ms, Duty Cycle 1.0%
VDS = 15V, VGS = 0, f = 1.0kHz
VDS = 15V, VGS = 0, f = 100MHz
VDS = 15V, VGS = 0, f = 1.0MHz
VDS = 15V, VGS = 0, f = 1.0MHz
VDS = 15V, RG = 1.0k,
f = 1.0kHz
Min. Typ. Max. Units
-30 V
-1.0 nA
-1.3 -3.5 V
4.0 8.0 mA
2000
6500
75
6.0
2.0
2.0
µmhos
µmhos
pF
pF
dB
Thermal Characteristics TA=25°C unless otherwise noted
Symbol
Parameter
PD Total Device Dissipation
Derate above 25°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max.
350
2.8
125
357
Units
mW
mW/°C
°C/W
°C/W
©2002 Fairchild Semiconductor Corporation
Rev. A1, November 2002

2N5952
Package Dimensions
TO-92
4.58
+0.25
–0.15
0.46 ±0.10
1.27TYP
[1.27 ±0.20]
1.27TYP
[1.27 ±0.20]
3.60 ±0.20
(R2.29)
0.38
+0.10
–0.05
©2002 Fairchild Semiconductor Corporation
Dimensions in Millimeters
Rev. A1, November 2002


Features 2N5952 2N5952 N-Channel RF Ampifier This device is designed primarily for electronic switching applications such as low on resistance analog switching. • Sourced from process 50. 1 TO-92 Absolute Maximum Ratings * TC=25°C un less otherwise noted 1. Gate 2. Source 3. Drain Symbol Parameter Value Un its VDG Drain-Gate Voltage 30 VGS Ga te-Source Voltage -30 IGF Forward Gat e Current 10 TJ, TSTG Operating and Storage Junction Temperature Range -55 ~ +150 * These ratings are limiting v alues above which the serviceability of any semiconductor device may be impair ed. V V mA °C NOTES: 1. These rating s are based on a maximum junction tempe rature of 150 degrees C. 2. These are s teady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. E lectrical Characteristics TC=25°C unle ss otherwise noted Symbol Parameter Test Condition Off Characteristics V( BR)GSS Gate-Source Breakdown Voltage IGSS Gate Reverse Current VGS(.
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