2N5953

2N5953 — N-Channel RF Amplifier September 2007 2N5953 N-Channel RF Amplifier This device is designed primarily for electronic switching applications such as low on resistance analog switching. Sourced from process 50. TO-92 1 1. Gate 2. Source 3. Drain Absolute Maximum Ratings* Ta=25°C unless otherwise noted Symbol VDG VGS IGF TJ, TSTG Parameter Drain-Gate Voltage Gate-Source Voltage Forward Gate Current Operating and Storage Junction Temperature Range * This ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These rating are based on a maximum junction temperature of 150 degrees C. 2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Ta=25°C unless otherwise noted Symbol Parameter PD Total Device Dissipation Derate above 25°C RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Value 30 -30 10 -55 ~ 150 Max. 350 2.8 125 357 Units V V mA °C Units mW mW/°C °C/W °C/W © 2007 Fairchild Semiconductor Corporation 2N5953 Rev. 1.0.0 1 www.fairchildsemi.com 2N5953 — N-Channel RF Amplifier Electrical Characteristics* Ta=25°C unless otherwise noted Symbol Parameter Test Condition Min. Max. Units Off Characteristics V(BR)GSS IGSS Gate-Source Breakdown Voltage Gate Reverse Current VGS(off) VGS Gate-Source Cut-off Voltage Gate-Source Forward Voltage On Characteristics ...