2N5953 Amplifier Datasheet

2N5953 Datasheet PDF, Equivalent


Part Number

2N5953

Description

N-Channel RF Amplifier

Manufacture

Fairchild Semiconductor

Total Page 4 Pages
Datasheet
Download 2N5953 Datasheet


2N5953
September 2007
2N5953
N-Channel RF Amplifier
• This device is designed primarily for electronic switching applications such as low on resistance analog switching.
• Sourced from process 50.
TO-92
1
1. Gate 2. Source 3. Drain
Absolute Maximum Ratings* Ta=25°C unless otherwise noted
Symbol
VDG
VGS
IGF
TJ, TSTG
Parameter
Drain-Gate Voltage
Gate-Source Voltage
Forward Gate Current
Operating and Storage Junction Temperature Range
* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These rating are based on a maximum junction temperature of 150 degrees C.
2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
PD Total Device Dissipation
Derate above 25°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Value
30
-30
10
-55 ~ 150
Max.
350
2.8
125
357
Units
V
V
mA
°C
Units
mW
mW/°C
°C/W
°C/W
© 2007 Fairchild Semiconductor Corporation
2N5953 Rev. 1.0.0
1
www.fairchildsemi.com

2N5953
Electrical Characteristics* Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Min. Max. Units
Off Characteristics
V(BR)GSS
IGSS
Gate-Source Breakdown Voltage
Gate Reverse Current
VGS(off)
VGS
Gate-Source Cut-off Voltage
Gate-Source Forward Voltage
On Characteristics
IDSS
VDS(on)
Zero-Gate Voltage Drain Current *
Drain-Source On Voltage
Small Signal Characteristics
gfs Forward Transferconductance
goss Common- Source Output Conductance
gos Output Conductance
gis Input Conductance
Ciss Input Capacitance
Crss Reverse Transfer Capacitance
en Equivalent Short-Circuit Input Noise Voltage
NF Noise Figure
* Pulse Test: Pulse Width 300μs, Duty Cycle = 2%
IG = 1.0μA, VDS = 0
VGS = 15V, VDS = 0, T = 25°C
T = 100°C
VDS = 15V, ID = 100nA
VDS = 15V, ID = 250μA
VDS = 15V, VGS = 0
ID = 267μA
VDS = 15V, VGS = 0V, f = 100MHz
VDS = 15V, VGS = 0V, f = 1.0kHz
VDS = 15V, VGS = 0V, f = 100MHz
VDS = 15V, VGS = 0V, f = 100MHz
VDS = 15V, VGS = 0V, f = 1.0MHz
VDS = 15V, VGS = 0V, f = 1.0MHz
VDS = 15V, VGS = 0V, f = 1.0kHz
VDS = 15V, VGS = 0V,
RG = 1.0mΩ, f = 1.0kHz
RG = 1.0kΩ, f = 100MHz
-30
-1.0
-200
-0.8 -3.0
-0.5 -2.5
2.5 5
0.1
1000
6500
50
50
250
6
2
100
2
5
V
nA
V
V
mA
V
μ/Ω
μ/Ω
μ/Ω
μ/Ω
pF
pF
nV
dB
© 2007 Fairchild Semiconductor Corporation
2N5953 Rev. 1.0.0
2
www.fairchildsemi.com


Features 2N5953 — N-Channel RF Amplifier Septe mber 2007 2N5953 N-Channel RF Amplifier • This device is designed primarily for electronic switching applications s uch as low on resistance analog switchi ng. • Sourced from process 50. TO-92 1 1. Gate 2. Source 3. Drain Absolute Maximum Ratings* Ta=25°C unless other wise noted Symbol VDG VGS IGF TJ, TSTG Parameter Drain-Gate Voltage Gate-Sou rce Voltage Forward Gate Current Operat ing and Storage Junction Temperature Ra nge * This ratings are limiting values above which the serviceability of any semiconductor device may be impaired. N OTES: 1) These rating are based on a ma ximum junction temperature of 150 degre es C. 2) These are steady limits. The f actory should be consulted on applicati ons involving pulsed or low duty cycle operations. Thermal Characteristics Ta =25°C unless otherwise noted Symbol Parameter PD Total Device Dissipation Derate above 25°C RθJC RθJA Therma l Resistance, Junction to Case Thermal Resistance, Junction to Ambient Va.
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