2N6987

TECHNICAL DATA MULTIPLE (QUAD) PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/558 Devices 2N6987 2N6987U 2N6988 Qualified Level JAN JANTX JANTXV JANS MAXIMUM RATINGS (1) Ratings Collector-Emitter Voltage (4) Collector-Base Voltage (4) Emitter-Base Voltage (4) Collector Current Total Power Dissipation @ TA = +250C 2N6987 (2) 2N6987U (2) 2N6988 (3) Symbol VCEO VCBO VEBO IC PT Operating & Storage Junction Temperature Range Top, Tstg 1) Maximum voltage between transistors shall be ≥ 500 Vdc 2) Derate linearly 8.57 mW/0C above TA = +250C 3) Derate linearly 2.286 mW/0C above TA = +250C. 4) Ratings apply to each transistor in the array. Value 60 60 5.0 600 Units Vdc Vdc Vdc mAdc 1.5 1.0 0.4 -65 to +200 W 0C ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted) Characteristics Symbol OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 10 mAdc Collector-Base Cutoff Current V(BR)CEO VCB = 60 Vdc ICBO VCB = 50 Vdc Emitter-Base Cutoff Current VBE = 5.0 Vdc IEBO VEB = 3.5 Vdc Min. 60 2N6987* TO- 116 2N6987U* 20 PIN LEADLESS 2N6988* 14 PIN FLAT PACK *See appendix A for package outline Max. Unit Vdc 10 µAdc 10 ηAdc 10 µAdc 50 ηAdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 1 of 2 2N6987, 2N6988 JAN, SERIES ELECTRICAL CHARACTERISTICS (con’t) Characteristics ON CHARACTERISTICS Forward-Current Transfer Ratio IC = 0.1 mAdc, VCE = 10 Vdc IC = 1.0 mAdc, VCE = 10 Vdc IC...