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2N6988 Dataheets PDF



Part Number 2N6988
Manufacturers Microsemi
Logo Microsemi
Description MULTIPLE (QUAD) PNP SILICON SWITCHING TRANSISTOR
Datasheet 2N6988 Datasheet2N6988 Datasheet (PDF)

TECHNICAL DATA MULTIPLE (QUAD) PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/558 Devices 2N6987 2N6987U 2N6988 Qualified Level JAN JANTX JANTXV JANS MAXIMUM RATINGS (1) Ratings Collector-Emitter Voltage (4) Collector-Base Voltage (4) Emitter-Base Voltage (4) Collector Current Total Power Dissipation @ TA = +250C 2N6987 (2) 2N6987U (2) 2N6988 (3) Symbol VCEO VCBO VEBO IC PT Operating & Storage Junction Temperature Range Top, Tstg 1) Maximum voltage between transistors s.

  2N6988   2N6988



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TECHNICAL DATA MULTIPLE (QUAD) PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/558 Devices 2N6987 2N6987U 2N6988 Qualified Level JAN JANTX JANTXV JANS MAXIMUM RATINGS (1) Ratings Collector-Emitter Voltage (4) Collector-Base Voltage (4) Emitter-Base Voltage (4) Collector Current Total Power Dissipation @ TA = +250C 2N6987 (2) 2N6987U (2) 2N6988 (3) Symbol VCEO VCBO VEBO IC PT Operating & Storage Junction Temperature Range Top, Tstg 1) Maximum voltage between transistors shall be ≥ 500 Vdc 2) Derate linearly 8.57 mW/0C above TA = +250C 3) Derate linearly 2.286 mW/0C above TA = +250C. 4) Ratings apply to each transistor in the array. Value 60 60 5.0 600 Units Vdc Vdc Vdc mAdc 1.5 1.0 0.4 -65 to +200 W 0C ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted) Characteristics Symbol OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 10 mAdc Collector-Base Cutoff Current V(BR)CEO VCB = 60 Vdc ICBO VCB = 50 Vdc Emitter-Base Cutoff Current VBE = 5.0 Vdc IEBO VEB = 3.5 Vdc Min. 60 2N6987* TO- 116 2N6987U* 20 PIN LEADLESS 2N6988* 14 PIN FLAT PACK *See appendix A for package outline Max. Unit Vdc 10 µAdc 10 ηAdc 10 µAdc 50 ηAdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 1 of 2 2N6987, 2N6988 JAN, SERIES ELECTRICAL CHARACTERISTICS (con’t) Characteristics ON CHARACTERISTICS Forward-Current Transfer Ratio IC = 0.1 mAdc, VCE = 10 Vdc IC = 1.0 mAdc, VCE = 10 Vdc IC = 10 mAdc, VCE = 10 Vdc IC = 150 mAdc, VCE = 10 Vdc IC = 500 mAdc, VCE =10 Vdc Collector-Emitter Saturation Voltage IC = 150 mAdc, IB = 15 mAdc IC = 500 mAdc, IB = 50 mAdc Base-Emitter Voltage IC = 150 mAdc, IB = 15 mAdc IC = 500 mAdc, IB = 50 mAdc DYNAMIC CHARACTERISTICS Magnitude of Small-Signal Short-Circuit Forward-Current Transfer Ratio IC = 50 mAdc, VCE = 20 Vdc, f = 100 MHz Small-Signal Short-Circuit Forward Current Transfer Ratio IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz Output Capacitance VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz Input Capacitance VEB = 2.0 Vdc, IC = 0, 100 kHz ≤ f ≤ 1.0 MHz Symbol hFE VCE(sat) VBE(sat) hfe hfe Cobo Cibo Min. Max. Unit 75 100 450 100 100 300 50 0.4 1.6 1.3 2.6 Vdc Vdc 2.0 8.0 100 8.0 30 pF pF 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 2 of 2 .


2N6987U 2N6988 2N6987


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