2N6988 TRANSISTOR Datasheet

2N6988 Datasheet PDF, Equivalent


Part Number

2N6988

Description

MULTIPLE (QUAD) PNP SILICON SWITCHING TRANSISTOR

Manufacture

Microsemi

Total Page 2 Pages
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2N6988
TECHNICAL DATA
MULTIPLE (QUAD) PNP SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/558
Devices
2N6987
2N6987U
2N6988
Qualified Level
JAN
JANTX
JANTXV
JANS
MAXIMUM RATINGS (1)
Ratings
Collector-Emitter Voltage (4)
Collector-Base Voltage (4)
Emitter-Base Voltage (4)
Collector Current
Total Power Dissipation
@ TA = +250C
2N6987 (2)
2N6987U (2)
2N6988 (3)
Symbol
VCEO
VCBO
VEBO
IC
PT
Operating & Storage Junction Temperature Range
Top, Tstg
1) Maximum voltage between transistors shall be 500 Vdc
2) Derate linearly 8.57 mW/0C above TA = +250C
3) Derate linearly 2.286 mW/0C above TA = +250C.
4) Ratings apply to each transistor in the array.
Value
60
60
5.0
600
Units
Vdc
Vdc
Vdc
mAdc
1.5
1.0
0.4
-65 to +200
W
0C
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 10 mAdc
Collector-Base Cutoff Current
V(BR)CEO
VCB = 60 Vdc
ICBO
VCB = 50 Vdc
Emitter-Base Cutoff Current
VBE = 5.0 Vdc
IEBO
VEB = 3.5 Vdc
Min.
60
2N6987*
TO- 116
2N6987U*
20 PIN LEADLESS
2N6988*
14 PIN FLAT PACK
*See appendix A for
package outline
Max.
Unit
Vdc
10 µAdc
10 ηAdc
10 µAdc
50 ηAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2

2N6988
2N6987, 2N6988 JAN, SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
ON CHARACTERISTICS
Forward-Current Transfer Ratio
IC = 0.1 mAdc, VCE = 10 Vdc
IC = 1.0 mAdc, VCE = 10 Vdc
IC = 10 mAdc, VCE = 10 Vdc
IC = 150 mAdc, VCE = 10 Vdc
IC = 500 mAdc, VCE =10 Vdc
Collector-Emitter Saturation Voltage
IC = 150 mAdc, IB = 15 mAdc
IC = 500 mAdc, IB = 50 mAdc
Base-Emitter Voltage
IC = 150 mAdc, IB = 15 mAdc
IC = 500 mAdc, IB = 50 mAdc
DYNAMIC CHARACTERISTICS
Magnitude of Small-Signal Short-Circuit
Forward-Current Transfer Ratio
IC = 50 mAdc, VCE = 20 Vdc, f = 100 MHz
Small-Signal Short-Circuit Forward Current Transfer Ratio
IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz f 1.0 MHz
Input Capacitance
VEB = 2.0 Vdc, IC = 0, 100 kHz f 1.0 MHz
Symbol
hFE
VCE(sat)
VBE(sat)
hfe
hfe
Cobo
Cibo
Min. Max. Unit
75
100 450
100
100 300
50
0.4
1.6
1.3
2.6
Vdc
Vdc
2.0 8.0
100
8.0
30
pF
pF
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2


Features TECHNICAL DATA MULTIPLE (QUAD) PNP SILI CON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/558 Devices 2N6987 2N698 7U 2N6988 Qualified Level JAN JANTX J ANTXV JANS MAXIMUM RATINGS (1) Rating s Collector-Emitter Voltage (4) Collect or-Base Voltage (4) Emitter-Base Voltag e (4) Collector Current Total Power Di ssipation @ TA = +250C 2N6987 (2) 2N69 87U (2) 2N6988 (3) Symbol VCEO VCBO VE BO IC PT Operating & Storage Junction Temperature Range Top, Tstg 1) Maximu m voltage between transistors shall be ≥ 500 Vdc 2) Derate linearly 8.57 mW /0C above TA = +250C 3) Derate linearly 2.286 mW/0C above TA = +250C. 4) Rati ngs apply to each transistor in the arr ay. Value 60 60 5.0 600 Units Vdc Vdc Vdc mAdc 1.5 1.0 0.4 -65 to +200 W 0 C ELECTRICAL CHARACTERISTICS (TA = 250 C unless otherwise noted) Characterist ics Symbol OFF CHARACTERISTICS Colle ctor-Emitter Breakdown Voltage IC = 10 mAdc Collector-Base Cutoff Current V(B R)CEO VCB = 60 Vdc ICBO VCB = 50 Vdc Emitter-Base Cutoff Curre.
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