2N6033 Transistor Datasheet

2N6033 Datasheet PDF, Equivalent


Part Number

2N6033

Description

NPN High Power Silicon Transistor

Manufacture

VPT

Total Page 4 Pages
PDF Download
Download 2N6033 Datasheet PDF


2N6033
2N6032, 2N6033
NPN High Power Silicon Transistor
Features
Available in JAN, JANTX, JANTXV per MIL-PRF-19500/528
TO-3 (TO-204AA) Package
Rev. V1
Electrical Characteristics
Parameter
Off Characteristics
Collector - Emitter Breakdown Voltage
Collector - Emitter Breakdown Voltage
Collector - Emitter Breakdown Voltage
Collector - Base Cutoff Current
Emitter - Base Cutoff Current
Collector - Emitter Cutoff Current
Collector - Emitter Cutoff Current
On Characteristics1
Test Conditions
Symbol Units Min.
IC = 200 mAdc, 2N6032
IC = 50 mAdc, 2N6033
IC = 200 mAdc, Both
V(BR)CEO Vdc
V(BR)CER Vdc
IC = 200 mAdc, Both
V(BR)CEX Vdc
VCB = 120 Vdc, 2N6032
VCB = 150 Vdc, 2N6033
ICBO mAdc
VEB = 7.0 Vdc
IEBO mAdc
VCE = 110 Vdc, VBE = -1.5 Vdc, 2N6032
VCE = 135 Vdc, VBE = -1.5 Vdc, 2N6033
ICEX
µAdc
VCE = 80 Vdc, Both
ICEO mAdc
90
120
110
140
120
150
Max.
25
25
10
250
250
10
Forward Current Transfer Ratio
IC = 50 Adc, VCE = 2.6 Vdc 2N6032
IC = 40 Adc, VCE = 2.0 Vdc 2N6033
hFE
10 50
10 5
Collector - Emitter Saturation Voltage
Emitter - Base Saturation Voltage
IC = 50 Adc, IB = 5.0 Adc 2N6032
IC = 40 Adc, IB = 4 Adc 2N6033
VCE(SAT) Vdc
IC = 50 Adc, IB = 5.0 Vdc 2N6032
IC = 40 Adc, IB = 4.0 Vdc 2N6033
VBE(SAT) Vdc
Dynamic Characteristics
Magnitude of Common Emitter Small-Signal
Short-Circuit Forward Current Transfer Ratio
IC = 2.0 Adc, VCE= 10 Vdc, f = 5 MHz
| hFE |
10
Output Capacitance
VCB = 10 Vdc, IE = 0, f = 1.0 MHz
1
1. Pulse Test: Pulse Width = 300 μs, Duty Cycle ≤2.0%.
COBO pF
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.vptcomponents.com for additional data sheets and product information.
For further information and support please visit:
www.vptcomponents.com
1.3
1.0
2.0
2.0
40
600

2N6033
2N6032, 2N6033
NPN High Power Silicon Transistor
Absolute Maximum Ratings
Ratings
Collector - Emitter Voltage
2N6032
2N6033
Collector - Base Voltage
2N6032
2N6033
Emitter - Base Voltage
Base Current
Collector Current
2N6032
2N6033
Total Power Dissipation
@ TC = 25°C1
Symbol
VCEO
VCBO
VEBO
IB
IC
PT
Operating & Storage Temperature Range
TOP, TSTG
1. Derate linearly @ 800 mW / °C for TC = 25 °C and TC = 200 °C
Thermal Characteristics
Characteristics
Thermal Resistance, Junction to Case
Symbol
RθJC
Switching Characteristics
VCC = 30 Vdc; IC = 50 Adc; IB = 5.0 Adc 2N6032
VCC = 30 Vdc; IC = 40 Adc; IB = 4.0 Adc 2N6033
VCC = 30 Vdc + 2; IC = 50 Adc; IB1 = 5 IB2 = -5 Adc 2N6032
VCC = 30 Vdc + 2; IC = 40 Adc; IB1 = 4 IB2 = -4 Adc 2N6033
Safe Operating Area
DC Tests:
TC = +25 °C, 1Cycle, t = 1.0 s
Symbol
t
on
t
off
Test 1:
Test 2:
Test 3:
Test 4:
Test 5:
Test 6:
VCE = 2.8 Vdc, IC = 50 Adc
VCE = 3.5 Vdc, IC = 40 Adc
VCE = 24 Vdc, IC = 5.8 Adc,
VCE = 40 Vdc, IC = 0.9 Adc,
VCE = 90 Vdc, IC = 0.18 Adc
VCE = 120 Vdc, IC = 0.1 Adc
2N6032
2N6033
Both types
Both types
2N6032
2N6033
Value
90 Vdc
120 Vdc
120 Vdc
150 Vdc
7.0 Vdc
10 Adc
50 Adc
40 Adc
140 W
-65°C to +200°C
Rev. V1
Max. Value
1.25°C/W
Max. Value
0.5 µS
2.0 µS
2
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.vptcomponents.com for additional data sheets and product information.
For further information and support please visit:
www.vptcomponents.com


Features 2N6032, 2N6033 NPN High Power Silicon Tr ansistor Features • Available in JAN, JANTX, JANTXV per MIL-PRF-19500/528 TO-3 (TO-204AA) Package Rev. V1 Ele ctrical Characteristics Parameter Off C haracteristics Collector - Emitter Brea kdown Voltage Collector - Emitter Break down Voltage Collector - Emitter Breakd own Voltage Collector - Base Cutoff Cur rent Emitter - Base Cutoff Current Coll ector - Emitter Cutoff Current Collecto r - Emitter Cutoff Current On Character istics1 Test Conditions Symbol Units Min. IC = 200 mAdc, 2N6032 IC = 50 mAd c, 2N6033 IC = 200 mAdc, Both V(BR)CEO Vdc V(BR)CER Vdc IC = 200 mAdc, Both V(BR)CEX Vdc VCB = 120 Vdc, 2N6032 VC B = 150 Vdc, 2N6033 ICBO mAdc VEB = 7 .0 Vdc IEBO mAdc VCE = 110 Vdc, VBE = -1.5 Vdc, 2N6032 VCE = 135 Vdc, VBE = -1.5 Vdc, 2N6033 ICEX µAdc VCE = 80 Vdc, Both ICEO mAdc 90 120 110 140 1 20 150 — — — — Max. — — 25 25 10 250 250 10 Forward Current Transfer Ratio IC = 50 Adc, VCE = 2.6 Vdc 2N6032 IC = 40 Adc, VCE = 2.0 Vdc 2N603.
Keywords 2N6033, datasheet, pdf, VPT, NPN, High, Power, Silicon, Transistor, N6033, 6033, 033, 2N603, 2N60, 2N6, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)