2N2904, 2N2904A, 2N2904AL 2N2905, 2N2905A, 2N2905AL
Radiation Hardened PNP Silicon Switching Transistors
Features
• Qualified to MIL-PRF-19500/290 • Available in JAN, JANTX, JANTXV, JANS and
JANSR • Radiation Tolerant Levels M, D, P, L and R • TO-39 and TO-5 package styles • General Purpose Switching and Amplifier
Applications
Rev. V3
Electrical Specifications @ TA = 25°C
Parameter Off Characteristics:
Collector - Emitter Breakdown
Test Conditions
IC = -10 mA dc 2N2904, 2N2905 2N2904A, 2N2905A 2N2904AL, 2N2905AL
Collector - Base Cutoff Current
VCB = -60 V dc
Symbol Units Minimum Maximum
V(BR)CEO V dc
-40 -60 -60
ICBO1 µA dc
—
— -10
Collector - Base Cutoff Current Emitter - Base Cutoff Current
VCB = -50 V dc 2N2904, 2N2905 2N2904A, 2N2905A 2N2904AL, 2N2905AL
VEB = -5.0 V dc
ICBO2 nA dc
—
IEBO1 µA dc
—
-20 -10 -10
-10
Emitter - Base Cutoff Current
VEB = -3.5 V dc
IEBO2 nA dc
—
Collector-Emitter Cutoff Current
2N2904, 2N2905; VCE = -40V dc 2N2904A, 2N2904AL; VCE = -60V dc 2N2905A, 2N2905AL; VCE = -60V dc
ICES µA dc
-50
1 1 1
1. Pulse Test: Pulse Width = 300 us, Duty Cycle < 2%.
1 (Continued next page)
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.vptcomponents.com for additional data sheets and product information.
For further information and support please visit:
[email protected]
2N2904, 2N2904A, 2N2904AL 2N2905, 2N2905A, 2N2905AL
Radiation Hardened PNP Silicon Switching Transistors
Parameter On Characteristics:
Forward Current Transfer Ratio
Forward Current Transfer Ratio
Test Conditions
VCE = -10 V dc, IC = -0.1 mA dc 2N2904 2N2905
2N2904A, 2N2904AL 2N2905A, 2N2905AL
VCE = -10 V dc, IC = -1.0 mA dc 2N2904 2N2905
2N2904A, 2N2904AL 2N2905A, 2N2905AL
Rev. V3 Symbol Units Minimum Maximum
20
hFE1
35 40
75
25 175
hFE2
50 450
40 175
100 450
Forward Current Transfer Ratio
VCE = -10 V dc, IC = -10 mA dc 2N2904 2N2905
2N2904A, 2N2904AL 2N2905A, 2N2905AL
hFE3
35 75 40 100
Forward Current Transfer Ratio
VCE = -10 V dc, IC = -150 mA dc 2N2904
2N2905 2N2904A, 2N2904AL 2N2905A, 2N2905AL
hFE4
40 120
40 120 100 300 100 300
Forward Current Transfer Ratio
VCE = -10 V dc, IC = -500 mA dc 2N2904 2N2905
2N2904A, 2N2904AL 2N2905A, 2N2905AL
hFE5
20 30 40 50
Collector - Emitter Voltage (Saturated)
IC = -150 mA dc, IB = -15 mA dc IC = -500 mA dc, IB = -50 mA dc
VCE(sat)1 VCE(sat)2
Vdc
—
-0.4 -1.6
Base - Emitter Voltage (Saturated)
IC = -150 mA dc, IB = -15 mA dc IC = -500 mA dc, IB = -50 mA dc
VBE(sat)1 VBE(sat)2
Vdc
—
-1.3 -2.6
2
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.vptcomponents.com for additional data sheets and product information.
For further information and support please visit:
[email protected]
2N2904, 2N2904A, 2N2904AL 2N2905, 2N2905A, 2N2905AL
Radiation Hardened PNP Silicon Switching .