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2N2904 Dataheets PDF



Part Number 2N2904
Manufacturers VPT
Logo VPT
Description Radiation Hardened PNP Transistors
Datasheet 2N2904 Datasheet2N2904 Datasheet (PDF)

2N2904, 2N2904A, 2N2904AL 2N2905, 2N2905A, 2N2905AL Radiation Hardened PNP Silicon Switching Transistors Features • Qualified to MIL-PRF-19500/290 • Available in JAN, JANTX, JANTXV, JANS and JANSR • Radiation Tolerant Levels M, D, P, L and R • TO-39 and TO-5 package styles • General Purpose Switching and Amplifier Applications Rev. V3 Electrical Specifications @ TA = 25°C Parameter Off Characteristics: Collector - Emitter Breakdown Test Conditions IC = -10 mA dc 2N2904, 2N2905 2N2904A, 2N290.

  2N2904   2N2904



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2N2904, 2N2904A, 2N2904AL 2N2905, 2N2905A, 2N2905AL Radiation Hardened PNP Silicon Switching Transistors Features • Qualified to MIL-PRF-19500/290 • Available in JAN, JANTX, JANTXV, JANS and JANSR • Radiation Tolerant Levels M, D, P, L and R • TO-39 and TO-5 package styles • General Purpose Switching and Amplifier Applications Rev. V3 Electrical Specifications @ TA = 25°C Parameter Off Characteristics: Collector - Emitter Breakdown Test Conditions IC = -10 mA dc 2N2904, 2N2905 2N2904A, 2N2905A 2N2904AL, 2N2905AL Collector - Base Cutoff Current VCB = -60 V dc Symbol Units Minimum Maximum V(BR)CEO V dc -40 -60 -60 ICBO1 µA dc — — -10 Collector - Base Cutoff Current Emitter - Base Cutoff Current VCB = -50 V dc 2N2904, 2N2905 2N2904A, 2N2905A 2N2904AL, 2N2905AL VEB = -5.0 V dc ICBO2 nA dc — IEBO1 µA dc — -20 -10 -10 -10 Emitter - Base Cutoff Current VEB = -3.5 V dc IEBO2 nA dc — Collector-Emitter Cutoff Current 2N2904, 2N2905; VCE = -40V dc 2N2904A, 2N2904AL; VCE = -60V dc 2N2905A, 2N2905AL; VCE = -60V dc ICES µA dc -50 1 1 1 1. Pulse Test: Pulse Width = 300 us, Duty Cycle < 2%. 1 (Continued next page) VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.vptcomponents.com for additional data sheets and product information. For further information and support please visit: [email protected] 2N2904, 2N2904A, 2N2904AL 2N2905, 2N2905A, 2N2905AL Radiation Hardened PNP Silicon Switching Transistors Parameter On Characteristics: Forward Current Transfer Ratio Forward Current Transfer Ratio Test Conditions VCE = -10 V dc, IC = -0.1 mA dc 2N2904 2N2905 2N2904A, 2N2904AL 2N2905A, 2N2905AL VCE = -10 V dc, IC = -1.0 mA dc 2N2904 2N2905 2N2904A, 2N2904AL 2N2905A, 2N2905AL Rev. V3 Symbol Units Minimum Maximum 20 hFE1 35 40 75 25 175 hFE2 50 450 40 175 100 450 Forward Current Transfer Ratio VCE = -10 V dc, IC = -10 mA dc 2N2904 2N2905 2N2904A, 2N2904AL 2N2905A, 2N2905AL hFE3 35 75 40 100 Forward Current Transfer Ratio VCE = -10 V dc, IC = -150 mA dc 2N2904 2N2905 2N2904A, 2N2904AL 2N2905A, 2N2905AL hFE4 40 120 40 120 100 300 100 300 Forward Current Transfer Ratio VCE = -10 V dc, IC = -500 mA dc 2N2904 2N2905 2N2904A, 2N2904AL 2N2905A, 2N2905AL hFE5 20 30 40 50 Collector - Emitter Voltage (Saturated) IC = -150 mA dc, IB = -15 mA dc IC = -500 mA dc, IB = -50 mA dc VCE(sat)1 VCE(sat)2 Vdc — -0.4 -1.6 Base - Emitter Voltage (Saturated) IC = -150 mA dc, IB = -15 mA dc IC = -500 mA dc, IB = -50 mA dc VBE(sat)1 VBE(sat)2 Vdc — -1.3 -2.6 2 VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.vptcomponents.com for additional data sheets and product information. For further information and support please visit: [email protected] 2N2904, 2N2904A, 2N2904AL 2N2905, 2N2905A, 2N2905AL Radiation Hardened PNP Silicon Switching .


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