2N2905A Transistors Datasheet

2N2905A Datasheet PDF, Equivalent


Part Number

2N2905A

Description

Radiation Hardened PNP Silicon Switching Transistors

Manufacture

VPT

Total Page 6 Pages
Datasheet
Download 2N2905A Datasheet


2N2905A
2N2904, 2N2904A, 2N2904AL
2N2905, 2N2905A, 2N2905AL
Radiation Hardened PNP Silicon Switching Transistors
Features
Qualified to MIL-PRF-19500/290
Available in JAN, JANTX, JANTXV, JANS and
JANSR
Radiation Tolerant Levels M, D, P, L and R
TO-39 and TO-5 package styles
General Purpose Switching and Amplifier
Applications
Rev. V3
Electrical Specifications @ TA = 25°C
Parameter
Off Characteristics:
Collector - Emitter Breakdown
Test Conditions
IC = -10 mA dc
2N2904, 2N2905
2N2904A, 2N2905A
2N2904AL, 2N2905AL
Collector - Base Cutoff Current
VCB = -60 V dc
Symbol Units Minimum Maximum
V(BR)CEO V dc
-40
-60
-60
ICBO1 µA dc
-10
Collector - Base Cutoff Current
Emitter - Base Cutoff Current
VCB = -50 V dc
2N2904, 2N2905
2N2904A, 2N2905A
2N2904AL, 2N2905AL
VEB = -5.0 V dc
ICBO2 nA dc
IEBO1 µA dc
-20
-10
-10
-10
Emitter - Base Cutoff Current
VEB = -3.5 V dc
IEBO2 nA dc
Collector-Emitter Cutoff Current
2N2904, 2N2905; VCE = -40V dc
2N2904A, 2N2904AL; VCE = -60V dc
2N2905A, 2N2905AL; VCE = -60V dc
ICES µA dc
-50
1
1
1
1. Pulse Test: Pulse Width = 300 us, Duty Cycle < 2%.
1 (Continued next page)
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.vptcomponents.com for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com

2N2905A
2N2904, 2N2904A, 2N2904AL
2N2905, 2N2905A, 2N2905AL
Radiation Hardened PNP Silicon Switching Transistors
Parameter
On Characteristics:
Forward Current Transfer Ratio
Forward Current Transfer Ratio
Test Conditions
VCE = -10 V dc, IC = -0.1 mA dc
2N2904
2N2905
2N2904A, 2N2904AL
2N2905A, 2N2905AL
VCE = -10 V dc, IC = -1.0 mA dc
2N2904
2N2905
2N2904A, 2N2904AL
2N2905A, 2N2905AL
Rev. V3
Symbol Units Minimum Maximum
20
hFE1
35
40
75
25 175
hFE2
50 450
40 175
100 450
Forward Current Transfer Ratio
VCE = -10 V dc, IC = -10 mA dc
2N2904
2N2905
2N2904A, 2N2904AL
2N2905A, 2N2905AL
hFE3
35
75
40
100
Forward Current Transfer Ratio
VCE = -10 V dc, IC = -150 mA dc
2N2904
2N2905
2N2904A, 2N2904AL
2N2905A, 2N2905AL
hFE4
40 120
40 120
100 300
100 300
Forward Current Transfer Ratio
VCE = -10 V dc, IC = -500 mA dc
2N2904
2N2905
2N2904A, 2N2904AL
2N2905A, 2N2905AL
hFE5
20
30
40
50
Collector - Emitter Voltage (Saturated)
IC = -150 mA dc, IB = -15 mA dc
IC = -500 mA dc, IB = -50 mA dc
VCE(sat)1
VCE(sat)2
Vdc
-0.4
-1.6
Base - Emitter Voltage (Saturated)
IC = -150 mA dc, IB = -15 mA dc
IC = -500 mA dc, IB = -50 mA dc
VBE(sat)1
VBE(sat)2
Vdc
-1.3
-2.6
2
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.vptcomponents.com for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com


Features 2N2904, 2N2904A, 2N2904AL 2N2905, 2N2905 A, 2N2905AL Radiation Hardened PNP Sili con Switching Transistors Features • Qualified to MIL-PRF-19500/290 • Avai lable in JAN, JANTX, JANTXV, JANS and J ANSR • Radiation Tolerant Levels M, D , P, L and R • TO-39 and TO-5 package styles • General Purpose Switching a nd Amplifier Applications Rev. V3 Ele ctrical Specifications @ TA = 25°C Pa rameter Off Characteristics: Collector - Emitter Breakdown Test Conditions IC = -10 mA dc 2N2904, 2N2905 2N2904A, 2N 2905A 2N2904AL, 2N2905AL Collector - B ase Cutoff Current VCB = -60 V dc Sym bol Units Minimum Maximum V(BR)CEO V d c -40 -60 -60 ICBO1 µA dc — — -10 Collector - Base Cutoff Current Em itter - Base Cutoff Current VCB = -50 V dc 2N2904, 2N2905 2N2904A, 2N2905A 2N 2904AL, 2N2905AL VEB = -5.0 V dc ICBO2 nA dc — IEBO1 µA dc — -20 -10 -10 -10 Emitter - Base Cutoff Current VEB = -3.5 V dc IEBO2 nA dc — Co llector-Emitter Cutoff Current 2N2904, 2N2905; VCE = -40V dc 2N2904A, 2N2904AL; VCE =.
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