Part Number |
2N2905A |
Manufacturers |
VPT |
Logo |
|
Description |
Radiation Hardened PNP Transistors |
Datasheet |
2N2905A Datasheet (PDF) |
2N2904, 2N2904A, 2N2904AL 2N2905, 2N2905A, 2N2905AL
Radiation Hardened PNP Silicon Switching Transistors
Features
• Qualified to MIL-PRF-19500/290 • Available in JAN, JANTX, JANTXV, JANS and
JANSR • Radiation Tolerant Levels M, D, P, L and R • TO-39 and TO-5 package styles • General Purpose Switching and Amplifier
Applications
Rev. V3
Electrical Specifications @ TA = 25°C
Parameter Off Characteristics:
Collector - Emitter Breakdown
Test Conditions
IC = -10 mA dc 2N2904, 2N2905 2N2904A, 2N2905A 2N2904AL, 2N2905AL
Collector - Base Cutoff Current
VCB = -60 V dc
Symbol Units Minimum Maximum
V(BR)CEO V dc
-40 -60 -60
ICBO1 µA dc
—
— -10
Collector - Base Cutoff Current Emitter - Base Cutoff Current
VCB = -50 V dc 2N2904, 2N2905 2N2904A, 2N2905A 2N2904AL, 2N2905AL
VEB = -5.0 V dc
ICBO2 nA dc
—
IEBO1 µA dc
—
-20 -10 -10
-10
Emitter - Base Cutoff Current
VEB = -3.5 V dc
IEBO2 nA dc
—
Collector-Emitter Cutoff Current
2N2904, 2N2905; VCE = -40V dc 2N2904A, 2N2904AL; VCE =.