2N2905A

2N2904, 2N2904A, 2N2904AL 2N2905, 2N2905A, 2N2905AL Radiation Hardened PNP Silicon Switching Transistors Features Qualified to MIL-PRF-19500/290 Available in JAN, JANTX, JANTXV, JANS and JANSR Radiation Tolerant Levels M, D, P, L and R TO-39 and TO-5 package styles General Purpose Switching and Amplifier Applications Rev. V3 Electrical Specifications @ TA = 25°C Parameter Off Characteristics: Collector - Emitter Breakdown Test Conditions IC = -10 mA dc 2N2904, 2N2905 2N2904A, 2N2905A 2N2904AL, 2N2905AL Collector - Base Cutoff Current VCB = -60 V dc Symbol Units Minimum Maximum V(BR)CEO V dc -40 -60 -60 ICBO1 µA dc — — -10 Collector - Base Cutoff Current Emitter - Base Cutoff Current VCB = -50 V dc 2N2904, 2N2905 2N2904A, 2N2905A 2N2904AL, 2N2905AL VEB = -5.0 V dc ICBO2 nA dc — IEBO1 µA dc — -20 -10 -10 -10 Emitter - Base Cutoff Current VEB = -3.5 V dc IEBO2 nA dc — Collector-Emitter Cutoff Current 2N2904, 2N2905; VCE = -40V dc 2N2904A, 2N2904AL; VCE = -60V dc 2N2905A, 2N2905AL; VCE = -60V dc ICES µA dc -50 1 1 1 1. Pulse Test: Pulse Width = 300 us, Duty Cycle < 2%. 1 (Continued next page) VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.vptcomponents.com for additional data sheets and product information. For further information and support please visit: [email protected] 2N2904, 2N2904A, 2N2904AL 2N2905, 2N2905A, 2N2905AL Radiation Harden...