2N5114

2N5114, 2N5115, 2N5116 P Channel J-FET Features Available in JAN, JANTX and JANTXV per MIL-PRF-19500/476 TO-18 and UB Package Types Designed for High Reliability Switching Applications Rev. V2 Electrical Characteristics (TA = +25oC unless otherwise specified) Parameter Test Conditions Symbol Units Min. Gate-Source Breakdown Voltage VDS = 0, IG = 1.0 µA dc V(BR)GSS V dc 30 Max. — Drain-Source “On” State Voltage VGS = 0 V, ID = -15 mA dc 2N5114 VGS = 0 V, ID = -7.0 mA dc 2N5115 VGS = 0 V, ID = -3.0 mA dc 2N5116 VDS (on) V dc — Gate Reverse Current VDS = 0, VGS = 20V IGSS pA — Drain Current Cutoff Zero Gate Voltage Drain Current Gate-Source Cutoff VGS = 12 V dc, VDS = -15 V dc 2N5114 VGS = 7.0 V dc, VDS = -15 V dc 2N5115 VGS = 5.0 V dc, VDS = -15 V dc 2N5116 VGS = 0 V, VDS = -18 V dc 2N5114 VGS = 0 V, VDS = -15 V dc 2N5115 VGS = 0 V, VDS = -15 V dc 2N5116 VGS = -15 V dc, ID = -1.0 nA dc 2N5114 VGS = -15 V dc, ID = -1.0 nA dc 2N5115 VGS = -15 V dc, ID = -1.0 nA dc 2N5116 ID(off) IDSS VGS(off) pA mA Absolute Maximum Ratings (TA = +25oC unless otherwise specified) Ratings Symbol Value — -30 -15 -5.0 5.0 3.0 1.0 Gate-Source Voltage (2) VGS 30 V dc Drain-Source Voltage Drain-Gate Voltage (2) VDS VDG 30 V dc 30 V dc Gate Current Steady-State Power Dissipation @ TA = 25°C(1) Junction & Storage Temperature Range IG PD TJ and TSTG 50 mA dc 0.500 W -65°C to +200°C (1) Derate linearly 3.0 mW/oC for TA > +25oC (2) Symmetrical geometry allows oper...