2N5153U3 Transistor Datasheet

2N5153U3 Datasheet PDF, Equivalent


Part Number

2N5153U3

Description

PNP Power Silicon Transistor

Manufacture

VPT

Total Page 5 Pages
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2N5153U3
2N5151U3 & 2N5153U3
PNP Power Silicon Transistor
Features
Available in JAN, JANTX, JANTXV, JANS and JANSR per MIL-PRF-19500/545
Lightweight & Low Power
Ideal for Space, Military, and Other High Reliability Applications
Surface Mount U3 Package
Rev. V5
Electrical Characteristics (TC = +25oC unless otherwise specified)
Parameter
Test Conditions
Symbol Units Min.
Max.
Collector - Emitter Breakdown Voltage
Emitter - Base Cutoff Current
Collector - Emitter Cutoff Current
Collector - Emitter Cutoff Current
Forward Current Transfer Ratio
Collector - Emitter Saturation Voltage
Base - Emitter Voltage (Non-Saturated)
Base - Emitter Saturation Voltage
IC = -100 mA dc; IB = 0
VEB = -4.0 V dc; IC = 0
VEB = -5.5 V dc; IC = 0
VCE = -60 V dc; VBE = 0
VCE = -100 V dc; VBE = 0
VCE = -40 V dc; IB = 0
VCE = -5.0 Vdc; IC = -50 mA dc
2N5151U3
2N5153U3
VCE = -5.0 Vdc; IC = -2.5 A dc
2N5151U3
2N5153U3
VCE = -5.0 Vdc; IC = -5.0 A dc
2N5151U3
2N5153U3
IC = -2.5 A dc; IB = -250 mA dc
IC = -5.0 A dc; IB = -500 mA dc
VCE= -5.0 V dc; IC = -2.5 A dc
IC = -2.5 A dc; IB = -250 mA dc
IC = -5.0 A dc; IB = -500 mA dc
V(BR)CEO V dc
IEBO1
IEBO2
ICES1
ICES2
ICEO
µA dc
mA dc
µA dc
mA dc
µA dc
-80
-1.0
-1.0
-1.0
-1.0
-50
hFE -
VCE(sat)1
VCE(sat)2
V dc
VBE V dc
VBE(sat)1
VBE(sat)2
V dc
20
50
30
70
20
40
90
200
-0.75
-1.50
-1.45
-1.45
-2.20
Magnitude of Common Emitter Small-Signal
Short-Circuit, Forward Current, Transfer Ratio
VCE
=
-5.0
Vdc;
IC = -500 mA
2N5151U3
2N5153U3
dc;
f
=
10
MHz
| hfe |
-
6
7
Common-Emitter, Small-Signal Short-Circuit
Forward Current Transfer Ratio
VCE = -5.0 V dc; IC = -100 mA dc; f = 1 kHz
2N5151U3
2N5153U3
hfe
-
20
50
Open-Circuit Output Capacitance
VCB = -10 V dc, IE = 0, f = 1 MHz
Cobo
pF
1
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.vptcomponents.com for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com
250

2N5153U3
2N5151U3 & 2N5153U3
PNP Power Silicon Transistor
Rev. V5
Electrical Characteristics (TC = +25oC unless otherwise specified)
Parameter
Test Conditions
Symbol Units Min.
Max.
Collector - Emitter Cutoff Current
Forward - Current Transfer Ratio
TC = +150oC
VCE = -60 V dc; VBE = + 2 V dc
TC = -55oC
VCE = -5 V dc; IC = -2.5 A dc
2N5151U3
2N5153U3
ICEX µA dc —
-25
hFE4
-
15
25
Absolute Maximum Ratings (TC = +25oC unless otherwise specified)
Ratings
Collector - Emitter Voltage
Collector - Base Voltage
Emitter - Base Voltage
Collector Current
Symbol
VCEO
VCBO
VEBO
IC
Value
-80 V dc
-100 V dc
-5.5 Vdc
-2 A dc
-10 A dc (3)
Reverse Pulse Energy(4)
15 mj
Total Power Dissipation (1)
@ TA = 25°C
@ TC = 25°C
Operating & Storage Temperature Range
PT
TJ, TSTG
1.16 W
100 W
-65°C to +200°C
Thermal Characteristics
Characteristics
Thermal Resistance, Junction to Case(2)
Thermal Resistance, Junction to Ambient(2)
Symbol
RθJC
RθJA
Max. Value
1.75°C/W
150°C/W(5)
(1) See figures 6, 7, 8 and 9 of MIL-PRF-19500/545 for temperature-power derating curves.
(2) See figures 10, 11 and 12 of MIL-PRF-19500/545 for transient thermal impedance graph.
(3) The value applies for pw < 8.3 ms, duty cycle < 1 percent.
(4) This rating is based on the capability of the transistors to operate safely in the unclamped inductive load energy test circuit, see subgroup
5 of the group A inspection table and figure 13 of MIL-PRF-19500/545.
(5) Mounted on an FR4 printed circuit board.
2
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.vptcomponents.com for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com


Features 2N5151U3 & 2N5153U3 PNP Power Silicon Tr ansistor Features • Available in JAN, JANTX, JANTXV, JANS and JANSR per MIL- PRF-19500/545 • Lightweight & Low Pow er • Ideal for Space, Military, and O ther High Reliability Applications • Surface Mount U3 Package Rev. V5 Elec trical Characteristics (TC = +25oC unle ss otherwise specified) Parameter Tes t Conditions Symbol Units Min. Max. Collector - Emitter Breakdown Voltage E mitter - Base Cutoff Current Collector - Emitter Cutoff Current Collector - Em itter Cutoff Current Forward Current Tr ansfer Ratio Collector - Emitter Satura tion Voltage Base - Emitter Voltage (No n-Saturated) Base - Emitter Saturation Voltage IC = -100 mA dc; IB = 0 VEB = -4.0 V dc; IC = 0 VEB = -5.5 V dc; IC = 0 VCE = -60 V dc; VBE = 0 VCE = -100 V dc; VBE = 0 VCE = -40 V dc; IB = 0 VCE = -5.0 Vdc; IC = -50 mA dc 2N5151U3 2N 5153U3 VCE = -5.0 Vdc; IC = -2.5 A dc 2 N5151U3 2N5153U3 VCE = -5.0 Vdc; IC = - 5.0 A dc 2N5151U3 2N5153U3 IC = -2.5 A dc; IB = -250 mA dc IC = -5.0 A .
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