2N5038

2N5038 & 2N5039 NPN High Power Silicon Transistor Features Available in JAN, JANTX, JANTXV per MIL-PRF-19500/439 TO-3 (TO-204AA) Package Ideal for Use in Switching Regulators, Inverters, Power Amplifiers and Oscillators Rev. V3 Electrical Characteristics (TA = +25oC unless otherwise specified) Parameter Test Conditions Symbol Units Min. Max. Collector - Emitter Breakdown Voltage Collector - Base Cutoff Current Emitter - Base Cutoff Current Collector - Emitter Cutoff Current Collector - Emitter Cutoff Current IC = 200 mA dc, 2N5038 IC = 200 mA dc, 2N5039 VCE = 150 V dc, 2N5038 VCE = 125 V dc, 2N5039 VEB = 5.0 V dc V(BR)CEO V dc ICBO µA dc IEBO µA dc VCE = 100 V dc, VBE = -1.5 V dc, 2N5038 VCE = 85 V dc, VBE = -1.5 V dc, 2N5039 VCE = 70 V dc, 2N5038 VCE = 55 V dc, 2N5039 ICEX1 ICEO µA dc µA dc 90 75 — — — — — 1.0 1.0 100 5.0 5.0 1.0 1.0 Forward Current Transfer Ratio IC = 0.5 A dc, VCE = 5 Vdc 2N5038 2N5039 IC = 2.0 A dc, VCE = 5 Vdc 2N5038 2N5039 hFE - IC = 12 A dc, VCE = 5 Vdc 2N5038 IC = 10 A dc, VCE = 5 Vdc 2N5039 50 30 50 30 15 15 Collector - Emitter Saturation Voltage Emitter - Base Breakdown Voltage Emitter - Base Saturation Voltage IC = 12 A dc, IB = 1.2 A dc IC = 10 A dc, IB = 1.0 A dc IC = 20 A dc, IB = 5.0 A dc 2N5038 2N5039 Both VCE(sat)1 V dc IE = 25 mA dc V(BR)EBO V dc IC = 20 A dc, IB = 5.0 A dc VBE(sat) V dc — 7.0 __ 200 150 1.0 1.0 2.5 — 3.3 Base - Emitter Voltage (nonsaturated) IC = 12 A dc, VCE = 5.0 V dc 2N5038 IC = 10...