Silicon Transistor. 2N5039 Datasheet

2N5039 Transistor. Datasheet pdf. Equivalent

2N5039 Datasheet
Recommendation 2N5039 Datasheet
Part 2N5039
Description NPN High Power Silicon Transistor
Feature 2N5039; 2N5038 & 2N5039 NPN High Power Silicon Transistor Features • Available in JAN, JANTX, JANTXV per MIL.
Manufacture VPT
Datasheet
Download 2N5039 Datasheet





VPT 2N5039
2N5038 & 2N5039
NPN High Power Silicon Transistor
Features
Available in JAN, JANTX, JANTXV per MIL-PRF-19500/439
TO-3 (TO-204AA) Package
Ideal for Use in Switching Regulators, Inverters, Power
Amplifiers and Oscillators
Rev. V3
Electrical Characteristics (TA = +25oC unless otherwise specified)
Parameter
Test Conditions
Symbol Units
Min.
Max.
Collector - Emitter Breakdown Voltage
Collector - Base Cutoff Current
Emitter - Base Cutoff Current
Collector - Emitter Cutoff Current
Collector - Emitter Cutoff Current
IC = 200 mA dc, 2N5038
IC = 200 mA dc, 2N5039
VCE = 150 V dc, 2N5038
VCE = 125 V dc, 2N5039
VEB = 5.0 V dc
V(BR)CEO V dc
ICBO µA dc
IEBO µA dc
VCE = 100 V dc, VBE = -1.5 V dc, 2N5038
VCE = 85 V dc, VBE = -1.5 V dc, 2N5039
VCE = 70 V dc, 2N5038
VCE = 55 V dc, 2N5039
ICEX1
ICEO
µA dc
µA dc
90
75
1.0
1.0
100
5.0
5.0
1.0
1.0
Forward Current Transfer Ratio
IC = 0.5 A dc, VCE = 5 Vdc 2N5038
2N5039
IC = 2.0 A dc, VCE = 5 Vdc 2N5038
2N5039
hFE
-
IC = 12 A dc, VCE = 5 Vdc 2N5038
IC = 10 A dc, VCE = 5 Vdc 2N5039
50
30
50
30
15
15
Collector - Emitter Saturation Voltage
Emitter - Base Breakdown Voltage
Emitter - Base Saturation Voltage
IC = 12 A dc, IB = 1.2 A dc
IC = 10 A dc, IB = 1.0 A dc
IC = 20 A dc, IB = 5.0 A dc
2N5038
2N5039
Both
VCE(sat)1 V dc
IE = 25 mA dc
V(BR)EBO V dc
IC = 20 A dc, IB = 5.0 A dc
VBE(sat) V dc
7.0
__
200
150
1.0
1.0
2.5
3.3
Base - Emitter Voltage (nonsaturated)
IC = 12 A dc, VCE = 5.0 V dc 2N5038
IC = 10 A dc, VCE = 5.0 V dc 2N5039
VBE V dc
1
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.vptcomponents.com for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com
1.8
1.8



VPT 2N5039
2N5038 & 2N5039
NPN High Power Silicon Transistor
Rev. V3
Parameter
Collector - Emitter Cutoff Current
Forward Current Transfer Ratio
Dynamic Characteristics
Magnitude of Small-Signal Short-Circuit
Forward Current Transfer Ratio
Open Circuit Output Capacitance
Test Conditions
Symbol Units
TA = +150oC
VCE = 100 V dc, VBE = -1.5 V dc, 2N5038
VCE = 85 V dc, VBE = -1.5 V dc, 2N5039
TA = -55oC
VCE = 5 V dc, IC = 12 A dc, 2N5038
VCE = 5 V dc, IC = 10 A dc, 2N5039
ICEX2
hFE4
µA dc
-
Min.
10
10
IC = 2 A dc, VCE= 10 V dc, f = 5 MHz
VCB = 10 V dc, IE = 0 A dc,
100 kHz ≤ f ≤ 1 MHz
| hFE |
Cobo
pF
12
Max.
100
100
48
500
Switching Characteristics
Symbol
VCC = 30 + 2.0V dc; IC = 12 A dc; IB1 = 1.2 A dc 2N5038
ton
VCC = 30 + 2.0Vdc; IC = 10 A dc; IB1 = 1.0 A dc 2N5039
ton
VCC = 30 + 2.0Vdc; IC = 12 A dc; IB1 = -IB2 = 1.2 A dc 2N5038
toff
VCC = 30 + 2.0Vdc; IC = 10 A dc; IB1 = -IB2 = 1.0 A dc 2N5039
toff
Max. Value
0.5 µS
0.5 µS
2.0 µS
2.0 µS
2
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.vptcomponents.com for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com



VPT 2N5039
2N5038 & 2N5039
NPN High Power Silicon Transistor
Absolute Maximum Ratings (TA = +25oC unless otherwise specified)
Ratings
Collector - Emitter Voltage
2N5038
2N5039
Collector - Base Voltage
2N5038
2N5039
Emitter - Base Voltage
Base Current
Collector Current
Symbol
VCEO
VCBO
VEBO
IB
IC
Value
90 V dc
75 V dc
150 V dc
125 V dc
7.0 V dc
5.0 A dc
20 A dc
Total Power Dissipation
@ TC = +25°C(1)
PT
140 W
Operating & Storage Temperature Range
TJ, TSTG
-65°C to +200°C
Thermal Characteristics
Characteristics
Thermal Resistance, Junction to Case (2)
Symbol
RθJC
(1) Derate linearly 800 mW / °C for TA > + 25°C
(2) See figure 4 of MIL-PRF-19500/439 for thermal impedance curve.
Max. Value
1.25°C/W
Rev. V3
Safe Operating Area
DC Tests:
Test 1:
Test 2:
Test 3:
Test 4:
Test 4:
TC = +25 °C, 1Cycle, t = 1.0 s
VCE = 28 V dc, IC = 5.0 A dc
VCE = 45 V dc, IC = 0.9 A dc
VCE = 7.0 V dc, IC = 20 A dc,
VCE = 90 V dc, IC = 0.23 A dc, 2N5038
VCE = 75 V dc, IC = 0.32 A dc, 2N5039
3
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.vptcomponents.com for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com





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