2N5038 & 2N5039
NPN High Power Silicon Transistor
Features
• Available in JAN, JANTX, JANTXV per MIL-PRF-19500/439 • TO-...
2N5038 & 2N5039
NPN High Power Silicon
Transistor
Features
Available in JAN, JANTX, JANTXV per MIL-PRF-19500/439 TO-3 (TO-204AA) Package Ideal for Use in Switching
Regulators, Inverters, Power
Amplifiers and Oscillators
Rev. V3
Electrical Characteristics (TA = +25oC unless otherwise specified)
Parameter
Test Conditions
Symbol Units
Min.
Max.
Collector - Emitter Breakdown Voltage Collector - Base Cutoff Current Emitter - Base Cutoff Current Collector - Emitter Cutoff Current Collector - Emitter Cutoff Current
IC = 200 mA dc, 2N5038 IC = 200 mA dc, 2N5039 VCE = 150 V dc, 2N5038 VCE = 125 V dc, 2N5039
VEB = 5.0 V dc
V(BR)CEO V dc ICBO µA dc IEBO µA dc
VCE = 100 V dc, VBE = -1.5 V dc, 2N5038 VCE = 85 V dc, VBE = -1.5 V dc, 2N5039
VCE = 70 V dc, 2N5038 VCE = 55 V dc, 2N5039
ICEX1 ICEO
µA dc µA dc
90 75 —
—
—
—
—
1.0 1.0
100
5.0 5.0 1.0 1.0
Forward Current Transfer Ratio
IC = 0.5 A dc, VCE = 5 Vdc 2N5038 2N5039
IC = 2.0 A dc, VCE = 5 Vdc 2N5038 2N5039
hFE
-
IC = 12 A dc, VCE = 5 Vdc 2N5038 IC = 10 A dc, VCE = 5 Vdc 2N5039
50 30
50 30
15 15
Collector - Emitter Saturation Voltage Emitter - Base Breakdown Voltage Emitter - Base Saturation Voltage
IC = 12 A dc, IB = 1.2 A dc IC = 10 A dc, IB = 1.0 A dc IC = 20 A dc, IB = 5.0 A dc
2N5038 2N5039 Both
VCE(sat)1 V dc
IE = 25 mA dc
V(BR)EBO V dc
IC = 20 A dc, IB = 5.0 A dc
VBE(sat) V dc
— 7.0 __
200 150
1.0 1.0 2.5 — 3.3
Base - Emitter Voltage (nonsaturated)
IC = 12 A dc, VCE = 5.0 V dc 2N5038 IC = 10...