Silicon Transistor. 2N6301 Datasheet

2N6301 Transistor. Datasheet pdf. Equivalent

Part 2N6301
Description NPN Darlington Power Silicon Transistor
Feature 2N6300 & 2N6301 NPN Darlington Power Silicon Transistor Features • Available in JAN, JANTX, JANTXV p.
Manufacture VPT
Datasheet
Download 2N6301 Datasheet



2N6301
2N6300 & 2N6301
NPN Darlington Power Silicon Transistor
Features
Available in JAN, JANTX, JANTXV per MIL-PRF-500/539
TO-66 (TO-213AA) Package
Designed for High Gain Amplifier and Medium Speed
Switching Applications
Rev. V4
Electrical Characteristics (TA = +25oC unless otherwise noted)
Parameter
Test Conditions
Symbol Units Min.
Max.
Collector - Emitter Breakdown Voltage
Collector - Emitter Cutoff Current
Collector - Emitter Cutoff Current
Emitter - Base Cutoff Current
IC = 100 mA dc; 2N6300
IC = 100 mA dc; 2N6301
VCE = 30 V dc; 2N6300
VCE = 40 V dc; 2N6301
VCE = 60 V dc; VBE = -1.5 V dc; 2N6300
VCE = 80 V dc; VBE = -1.5 V dc; 2N6301
VEB = 5 V dc
V(BR)CEO V dc
ICEO mA dc
ICEX1 µA dc
IEBO mA dc
60
80
Forward Current Transfer Ratio
Collector - Emitter Saturation Voltage
Base - Emitter Saturation Voltage
IC = 1 A dc; VCE = 3 Vdc
IC = 4 A dc; VCE = 3 Vdc
IC = 8 A dc; VCE = 3 Vdc
IC = 4 A dc; IB = 16 mA dc
IC = 8 A dc, IB = 80 mA dc
IC = 8 A dc; IB = 80 mA dc
hFE -
VCE(SAT)1
VCE(SAT)2
V dc
VBE(SAT)2 V dc
Base - Emitter Voltage
Dynamic Characteristics
IC = 4 A dc; VCE = 3 V dc
VBE(ON) V dc
Magnitude of Small-Signal Short-Circuit
Forward Current Transfer Ratio
VCE = 3 V dc; IC = 3 A dc; f = 1.0 MHz | hfe |
Small-Signal Short-Circuit Forward Current
Transfer Ratio
VCE = 3 V dc; IC = 3 A dc; f = 1.0 kHz
hfe
Output Capacitance
VCB = 10 V dc; IE = 0; 100 kHz ≤ f ≤ 1 MHz Cobo
Switching Characteristics
Turn-On Time
Turn-Off Time
VCC = 30 Vdc; IC = 4.0 A dc;
IB1 = 16 mA dc
VCC = 30 Vdc; IC = 4.0 A dc;
IB1 = -IB2 = 16 mA dc
ton
toff
-
-
pF
µs
µs
500
700
100
25
300
0.5
0.5
10
10
2.0
18,000
2.0
3.0
4.0
2.8
350
200
2.0
8.0
1 1. Pulse Test: Pulse Width = 300 μs, Duty Cycle ≤2.0%.
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.vptcomponents.com for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com



2N6301
2N6300 & 2N6301
NPN Darlington Power Silicon Transistor
Rev. V4
Parameter
Collector - Emitter Cutoff Current
Forward Current Transfer Ratio
Test Conditions
Symbol Units Min.
TA = +150oC
VCE = 60 V dc; VBE = -1.5 V dc; 2N6300
VCE = 80 V dc; VBE = -1.5 V dc; 2N6301
TA = -55oC
VCE = 3 V dc; IC = 4 A dc
ICEX2 mA dc
hfe4
200
Max.
1.0
1.0
Absolute Maximum Ratings (TA = +25oC unless otherwise noted)
Ratings
Collector - Emitter Voltage
2N6300
2N6301
Collector - Base Voltage
2N6300
2N6301
Emitter - Base Voltage
Symbol
VCEO
VCBO
VEBO
Value
60 V dc
80 V dc
60 V dc
80 V dc
5 V dc
Base Current
IB
120 mA dc
Collector Current
Total Power Dissipation (1)
@ TC = 0°C
@ TC = 27°C
@ TC = 100°C
IC
PT
8 A dc
75 W
65 W
37 W
Operating & Storage Temperature Range
TJ, TSTG
-55°C to +200°C
Thermal Characteristics
Characteristics
Thermal Resistance, Junction to Case (2)
Symbol
RθJC
(1) See figure 2 of MIL-PRF-19500/539 for temperature derating curves.
(2) See figure 3 of MIL-PRF-19500/539 for thermal impedance curve.
Max. Value
2.66°C/W
Safe Operating Area
DC Tests:
TC = +25 °C, +10oC; I Cycle; t = 1.0 s
Test 1:
Test 2:
Test 3:
2
VCE = 8.0 Vdc; IC = 8.0 A dc
VCE = 20 Vdc; IC = 2.0 A dc
VCE = 60 Vdc; IC = 100 mA dc, 2N6300
VCE = 80 Vdc; IC = 100 mA dc, 2N6301
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.vptcomponents.com for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com





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