2N6989, 2N6989U, 2N6990
Multiple (Quad) NPN Silicon Dual In-Line And Flatpack Switching Transistor
Features
• Available in JAN, JANTX, JANTXV, JANS and JANSR per MIL-PRF-19500/559
• TO-116, 20 PIN Leadless (U) and 14 PIN Flat Pack package types • Radiation Tolerant Levels M, D, P, L, and R
Rev. V3
Electrical Characteristics
Parameter Off Characteristics
Collector - Emitter Breakdown Voltage
Collector - Base Cutoff Current
Emitter - Base Cutoff Current On Characteristics
Forward Current Transfer Ratio
Test Conditions IC = 10 mA dc VCB = 75 V dc VCB = 60 V dc VEB = 6.0 V dc VEB = 4.0 V dc
VCE = 10 V dc; IC = 0.1 mA dc VCE = 10 V dc; IC = 1.0 mA dc VCE = 10 V dc; IC = 10 mA dc VCE = 10 V dc; IC = 150 mA dc VCE = 10 V dc; IC = 500 mA dc
Symbol Units Min. Max.
V(BR)CEO V dc
50
ICBO1 µA dc ICBO2 nA dc
—
IEBO1 µA dc IEBO2 nA dc
—
—
10 10
10 10
50 75 325
hFE - 100 100 300 30
Collector - Emitter Saturation Voltage
IC = 150 mA dc; IB = 15 mA dc IC = 500 mA dc; IB = 50 mA dc
VCE(SAT)1 VCE(SAT)2
V dc
—
0.3 1.0
Base - Emitter Saturation Voltage
Dynamic Characteristics Magnitude of Common
Small-Signal Short-Circuit Forward Current Transfer Ratio
Small-Signal Short-Circuit Forward Current Transfer Ratio
Open Circuit Output Capacitance
Input Capacitance (Output Open-Circuited)
IC = 150 mA dc; IB = 15 mA dc IC = 500 mA dc; IB = 50 mA dc
VBE(SAT)1 VBE(SAT)2
V dc
0.6
1.2 2.0
VCE = 10 V dc; IC = 20 mA dc; f = 100 MHz
| hfe |
2.5 10.0
VCE = 10 V dc; IC = 1 mA dc; f = 1 kHz VCB = 10 V dc; IE = 0; 100 kHz ≤ f ≤ 1 MHz VEB = 0.5 V dc; IC = 0; 100 kHz ≤ f ≤ 1 MHz
hfe Cobo Cibo
pF pF
50 — —
8.0 25
1
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.vptcomponents.com for additional data sheets and product information.
For further information and support please visit:
[email protected]
2N6989, 2N6989U, 2N6990
Multiple (Quad) NPN Silicon Dual In-Line And Flatpack Switching Transistor
Rev. V3
Electrical Characteristics (TA = +25oC unless otherwise specified)
Parameter
Test Conditions
Symbol Units Min.
Max.
Collector - Base Cutoff Current
TA = +150oC VCB = 60 V dc
ICBO3 µA dc —
10
Forward-Current Transfer Ratio
TA = -55oC VCE = 10 V dc; IC = 10 mA dc
hFE6
35
Transistor to Transistor Resistance
Switching Characteristics Turn-On Time (saturated) Turn-Off Time (saturated)
| VT-T | = 500 V dc
RT-T ohms 1010
—
See figure 14 of MIL-PRF-19500/559 See figure 15 of MIL-PRF-19500/559
ton ns toff ns
— —
35 300
2
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.vptcomponents.com for additional data sheets and product information.
For further information and support please visit:
[email protected]
2N6989, 2N6989U, 2N6990
Multiple (Quad) NPN Silicon Dual In-Line And Flatpack Switching Transistor
Absolute Maximum Ratings (TA = 25oC unles.