2N6989 Transistor Datasheet

2N6989 Datasheet PDF, Equivalent


Part Number

2N6989

Description

Multiple (Quad) NPN Silicon Dual In-Line And Flatpack Switching Transistor

Manufacture

VPT

Total Page 11 Pages
PDF Download
Download 2N6989 Datasheet PDF


2N6989
2N6989, 2N6989U, 2N6990
Multiple (Quad) NPN Silicon Dual In-Line
And Flatpack Switching Transistor
Features
Available in JAN, JANTX, JANTXV, JANS and JANSR per
MIL-PRF-19500/559
TO-116, 20 PIN Leadless (U) and 14 PIN Flat Pack package types
Radiation Tolerant Levels M, D, P, L, and R
Rev. V3
Electrical Characteristics
Parameter
Off Characteristics
Collector - Emitter Breakdown Voltage
Collector - Base Cutoff Current
Emitter - Base Cutoff Current
On Characteristics
Forward Current Transfer Ratio
Test Conditions
IC = 10 mA dc
VCB = 75 V dc
VCB = 60 V dc
VEB = 6.0 V dc
VEB = 4.0 V dc
VCE = 10 V dc; IC = 0.1 mA dc
VCE = 10 V dc; IC = 1.0 mA dc
VCE = 10 V dc; IC = 10 mA dc
VCE = 10 V dc; IC = 150 mA dc
VCE = 10 V dc; IC = 500 mA dc
Symbol Units Min. Max.
V(BR)CEO V dc
50
ICBO1 µA dc
ICBO2 nA dc
IEBO1 µA dc
IEBO2 nA dc
10
10
10
10
50
75 325
hFE - 100
100 300
30
Collector - Emitter Saturation Voltage
IC = 150 mA dc; IB = 15 mA dc
IC = 500 mA dc; IB = 50 mA dc
VCE(SAT)1
VCE(SAT)2
V dc
0.3
1.0
Base - Emitter Saturation Voltage
Dynamic Characteristics
Magnitude of Common
Small-Signal Short-Circuit
Forward Current Transfer Ratio
Small-Signal Short-Circuit
Forward Current Transfer Ratio
Open Circuit Output Capacitance
Input Capacitance
(Output Open-Circuited)
IC = 150 mA dc; IB = 15 mA dc
IC = 500 mA dc; IB = 50 mA dc
VBE(SAT)1
VBE(SAT)2
V dc
0.6
1.2
2.0
VCE = 10 V dc; IC = 20 mA dc; f = 100 MHz
| hfe |
2.5 10.0
VCE = 10 V dc; IC = 1 mA dc; f = 1 kHz
VCB = 10 V dc; IE = 0; 100 kHz ≤ f ≤ 1 MHz
VEB = 0.5 V dc; IC = 0; 100 kHz ≤ f ≤ 1 MHz
hfe
Cobo
Cibo
pF
pF
50
8.0
25
1
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.vptcomponents.com for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com

2N6989
2N6989, 2N6989U, 2N6990
Multiple (Quad) NPN Silicon Dual In-Line
And Flatpack Switching Transistor
Rev. V3
Electrical Characteristics (TA = +25oC unless otherwise specified)
Parameter
Test Conditions
Symbol Units Min.
Max.
Collector - Base Cutoff Current
TA = +150oC
VCB = 60 V dc
ICBO3 µA dc —
10
Forward-Current Transfer Ratio
TA = -55oC
VCE = 10 V dc; IC = 10 mA dc
hFE6
35
Transistor to Transistor Resistance
Switching Characteristics
Turn-On Time (saturated)
Turn-Off Time (saturated)
| VT-T | = 500 V dc
RT-T ohms 1010
See figure 14 of MIL-PRF-19500/559
See figure 15 of MIL-PRF-19500/559
ton ns
toff ns
35
300
2
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.vptcomponents.com for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com


Features 2N6989, 2N6989U, 2N6990 Multiple (Quad) NPN Silicon Dual In-Line And Flatpack S witching Transistor Features • Availa ble in JAN, JANTX, JANTXV, JANS and JAN SR per MIL-PRF-19500/559 • TO-116, 20 PIN Leadless (U) and 14 PIN Flat Pack package types • Radiation Tolerant Le vels M, D, P, L, and R Rev. V3 Electr ical Characteristics Parameter Off Char acteristics Collector - Emitter Breakdo wn Voltage Collector - Base Cutoff Curr ent Emitter - Base Cutoff Current On Ch aracteristics Forward Current Transfer Ratio Test Conditions IC = 10 mA dc VC B = 75 V dc VCB = 60 V dc VEB = 6.0 V d c VEB = 4.0 V dc VCE = 10 V dc; IC = 0. 1 mA dc VCE = 10 V dc; IC = 1.0 mA dc V CE = 10 V dc; IC = 10 mA dc VCE = 10 V dc; IC = 150 mA dc VCE = 10 V dc; IC = 500 mA dc Symbol Units Min. Max. V(BR )CEO V dc 50 ICBO1 µA dc ICBO2 nA dc — IEBO1 µA dc IEBO2 nA dc — 10 10 10 10 50 75 325 hFE - 100 100 300 30 Collector - Emitter Saturation Voltage IC = 150 mA dc; IB = 15 mA dc IC = 500 mA dc; IB = 50 mA dc VCE(SA.
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